Si2327DS
Abstract: No abstract text available
Text: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)
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Si2327DS
O-236
OT-23)
70lectual
18-Jul-08
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Si2327DS
Abstract: No abstract text available
Text: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)
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Si2327DS
O-236
OT-23)
08-Apr-05
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PDF
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73240
Abstract: Si2327DS
Text: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)
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Si2327DS
O-236
OT-23)
70ycle
S-42448--Rev.
10-Jan-05
73240
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PDF
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Si7431DP
Abstract: No abstract text available
Text: Si7431DP New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 0.174 @ VGS = −10 V −3.8 0.180 @ VGS = −6 V −3.6 Qg (Typ) 88 D TrenchFETr Power MOSFETS D Ultra-Low On-Resistance Critical for Application
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Si7431DP
07-mm
Si7431DP-T1--E3
S-41817--Rev.
11-Oct-04
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"MARKING CODE M"
Abstract: SC-89 Si1035X
Text: Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V
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Original
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Si1035X
S-03201--Rev.
12-Mar-01
"MARKING CODE M"
SC-89
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Si7431DP
2002/95/EC
Si7431DP-T1-E3
Si7431DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Original
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Si7431DP
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SC-89
Abstract: Si1029X
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •
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Si1029X
SC-89
08-Apr-05
SC-89
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Original
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Si7431DP
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Original
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Si7431DP
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Si7431DP
2002/95/EC
Si7431DP-T1-E3
Si7431DP-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate
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Si7431DP
2002/95/EC
Si7431DP-T1-E3
Si7431DP-T1-GE3
11-Mar-11
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PDF
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SI1029X-T1GE3
Abstract: SC-89 Si1029X
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •
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Si1029X
SC-89
18-Jul-08
SI1029X-T1GE3
SC-89
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V
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Original
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Si1035X
2002/95/EC
SC-89
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V
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Si1035X
2002/95/EC
SC-89
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V
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Si1035X
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V
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Si1035X
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 S G D TAB D G D (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±20 V VGSM Transient
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O-247
O-263
IXTA26P20P
IXTH26P20P
IXTP26P20P
IXTQ26P20P
O-220
100ms
IXTA26P20P
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PDF
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26P20P
Abstract: IXTQ26P20P IXTP26P20P IXTA26P20P 3-26-08-B 26P20
Text: PolarPTM Power MOSFET IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P P-Channel Enhancement Mode Avalanche Rated G G D TAB D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous
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IXTA26P20P
IXTH26P20P
IXTP26P20P
IXTQ26P20P
O-247
O-220
O-263
100ms
IXTA26P20P
26P20P
IXTQ26P20P
IXTP26P20P
3-26-08-B
26P20
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PDF
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Untitled
Abstract: No abstract text available
Text: ZVP2120A Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)200 I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)
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ZVP2120A
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PDF
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Untitled
Abstract: No abstract text available
Text: Analog Power AM90P20-170B P-Channel 200-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = -10V 200 @ VGS = -5.5V ID (A) -34 -32 Typical Applications:
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AM90P20-170B
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si1029x
Abstract: No abstract text available
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21
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Si1029X
2002/95/EC
SC-89
11-Mar-11
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PDF
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7130-1 transistor
Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200
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OCR Scan
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SM035X_
S-02367--Rev.
23-Oct-OO
7130-1 transistor
TRANSISTOR mosfet SD 1074
marking code LG
Si1301
RU4 diode
SM035X
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PDF
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2n6851
Abstract: No abstract text available
Text: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET
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OCR Scan
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2n6851
MIL-S-19500/564
Param2n6851_
P-37010â
2SM735
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