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    P-CH MOSFET Search Results

    P-CH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P-CH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot-363 n-channel mosfet

    Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
    Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel


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    CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th PDF

    Untitled

    Abstract: No abstract text available
    Text: MA3302S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA3302S10000000 D061009 PDF

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    Abstract: No abstract text available
    Text: MA4306S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA4306S10000000 D061009 PDF

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    Abstract: No abstract text available
    Text: MA4803S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA4803S10000000 D061009 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA3801S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA3801S10000000 D061009 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA3303S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA3303S10000000 D061009 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4302S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA4302S10000000 D061009 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA3304S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA3304S10000000 D061009 PDF

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    Abstract: No abstract text available
    Text: MA4301S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA4301S10000000 D061009 PDF

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    Abstract: No abstract text available
    Text: MA4302D10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210


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    MA4302D10000000 D020210 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA2602S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210


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    MA2602S10000000 D020210 PDF

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    Abstract: No abstract text available
    Text: MA4305S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


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    MA4305S10000000 D061009 PDF

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    Abstract: No abstract text available
    Text: MA2601S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210


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    MA2601S10000000 D020210 PDF

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    Abstract: No abstract text available
    Text: MA3304V10000000 N-Ch and P-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610


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    MA3304V10000000 D032610 PDF

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    Abstract: No abstract text available
    Text: MA4305D10000000 N-Ch and P-Ch 40V Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210


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    MA4305D10000000 D020210 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4301D10000000 N-Ch and P-Ch 40V Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210


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    MA4301D10000000 D020210 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA3801D10000000 N-Ch and P-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210


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    MA3801D10000000 D020210 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4306D10000000 N-Ch and P-Ch 40V Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210


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    MA4306D10000000 D020210 PDF

    GSS4569

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/09/20 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 40m N-CH ID 5.0A P-CH BVDSS -40V N-CH RDS(ON) 100m N-CH ID -4.4A GSS4569 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4569 provide the designer with the best combination of fast switching, ruggedized device design, low


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    GSS4569 GSS4569 PDF

    GT2530

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


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    GT2530 GT2530 OT-26 PDF

    GP4565

    Abstract: 40v N- and P-Channel dip
    Text: Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A GP4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4565 provide the designer with the best combination of fast switching, ruggedized device design, low


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    GP4565 GP4565 40v N- and P-Channel dip PDF

    GP4501

    Abstract: GP450
    Text: Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GP4501 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4501 provide the designer with the best combination of fast switching, ruggedized device design, low


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    GP4501 GP4501 GP450 PDF

    GT3585

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and


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    GT3585 GT3585 OT-26 PDF

    300 Amp mosfet

    Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
    Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH


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    400MHz T0106 200MHz 18Typ 250pA tiMaias11! 300 Amp mosfet mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp PDF