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    P CHANNEL LOW GATE CHARGE Search Results

    P CHANNEL LOW GATE CHARGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL LOW GATE CHARGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.


    Original     		PDF UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.


    Original     		PDF UT3419 UT3419 UT3419G-AE2-R UT3419G-AE3-R OT-23-3 OT-23 QW-R502-391

    P Channel Low Gate Charge

    Abstract: KTHD3100C
    Text: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25


    Original     		PDF KTHD3100C P Channel Low Gate Charge KTHD3100C

    UT3419

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.


    Original     		PDF UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391

    UT3419

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.


    Original     		PDF UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391

    RD10

    Abstract: WTV3585
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		PDF WTV3585 03-Apr-07 RD10 WTV3585

    Untitled

    Abstract: No abstract text available
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		PDF WTV3585 OT-26 03-Apr-07

    Untitled

    Abstract: No abstract text available
    Text: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4535, -40V/-6 -40V/-5 GSM4535SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3050S, -30V/-9A -30V/-7A -30V/-5A O-252-2L GSM3050SDF O-252-2is Lane11

    Untitled

    Abstract: No abstract text available
    Text: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM3804, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3804, -40V/-10A O-252-2L GSM3804DF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4637, P-Channel enhancement mode OSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4637, -40V/-6 -40V/-5 GSM4637SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4953S, -30V/-5 -30V/-4 GSM4953SSF Lane11

    gsm39

    Abstract: No abstract text available
    Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3993, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3993, -30V/-3 Lane11 gsm39

    Untitled

    Abstract: No abstract text available
    Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9107, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM9107, -30V/-4 -30V/-3 -30V/-1 OT-23-3L GSM9107ZF OT-23-is Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3401AS, -30V/-2 -30V/-1 OT-23 GSM3401ASJZF OT-23) Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9103, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM9103, -30V/-3 OT-23-3L Lane11

    Untitled

    Abstract: No abstract text available
    Text: 2N4003K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE Features: * Gate Pretection Diode DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching.


    Original     		PDF 2N4003K OT-23 08-Sep-09 OT-23

    gsm2311

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart


    Original     		PDF GSM2311, -20V/-4 -20V/-3 -20V/-2 OT-23-3L Lane11 gsm2311

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3981, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM3981, -20V/-3 -20V/-2 -20V/-1 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM3413A, -20V/-2 -20V/-1 OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2301A, -20V/-2 OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2301AS, -20V/-2 OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM6801, -30V/-3 -30V/-2 -30V/-1 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM3413, -20V/-3 -20V/-2 -20V/-1 OT-23-3L Lane11