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    ORIGIN SEMICONDUCTOR RECTIFIER Search Results

    ORIGIN SEMICONDUCTOR RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ORIGIN SEMICONDUCTOR RECTIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
    Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


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    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
    Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


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    B250C2300

    Abstract: B250C1500a B40C2300-1500A B250C-1500A
    Text: B.C2300-1500A/B B.C2300-1500A/B Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2006-07-12 19 3.5 x 0.25 x 1.2 8.7 = = x x 0.8 5 5 5 Dimensions - Maße [mm] 1 10 Type Typ Nominal current Nennstrom 2.3 / 1.5 A Alternating input voltage


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    PDF C2300-1500A/B UL94V-0 B250C1500A" B250C1500A B250C1500A B250C23001500A b40c2300 21-May-2010 B250C2300 B40C2300-1500A B250C-1500A

    "Power Semiconductor Applications" Philips

    Abstract: No abstract text available
    Text: Philips Semiconductors Power Diodes Back diffused rectifier diodes A single-diffused P-N diode with a two layer structure cannot combine a high forward current density with a high reverse blocking voltage. A way out of this dilemma is provided by the three layer


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    AN-1084

    Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
    Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5


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    PDF AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


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    PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    SHINDENGEN* tr 452

    Abstract: TDK C3216JB1E225K CDRH104R-5R2 C1608JB1H100K DS04-27234-1E r27-200 C1608JB1H104K RB053L-30 td126 uPA2752
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27234-1E ASSP For Power Supply Applications Secondary Battery DC/DC Converter IC for Charging Li-ion Battery with Synchronous Rectifier MB39A107 • DESCRIPTION The MB39A107 is a DC/DC converter IC suitable for down-conversion, using pulse-width modulation (PWM)


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    PDF DS04-27234-1E MB39A107 MB39A107 F0312 SHINDENGEN* tr 452 TDK C3216JB1E225K CDRH104R-5R2 C1608JB1H100K DS04-27234-1E r27-200 C1608JB1H104K RB053L-30 td126 uPA2752

    CPH3106

    Abstract: CPH3206 F02J9 MB3881 NDS355AN SLF6028T-150M1R0 SLF6028T-330MR69 VT100
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27224-1E ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM


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    PDF DS04-27224-1E MB3881 MB3881 CPH3106 CPH3206 F02J9 NDS355AN SLF6028T-150M1R0 SLF6028T-330MR69 VT100

    Tdk Vcm

    Abstract: transformer pst 39 F02J9
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27224-2E ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM


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    PDF DS04-27224-2E MB3881 MB3881 Tdk Vcm transformer pst 39 F02J9

    SLF6028T-150M1R0

    Abstract: F02J9 CPH3106 CPH3206 MB3881 NDS355AN SLF6028T-330MR69 VT100
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27224-2E ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM


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    PDF DS04-27224-2E MB3881 MB3881 F0209 SLF6028T-150M1R0 F02J9 CPH3106 CPH3206 NDS355AN SLF6028T-330MR69 VT100

    1117 ADC

    Abstract: 558 QUAD TIMER pmp 7.24 DSP56F807 220v DC MOTOR SPEED CONTROLLER brushless motors cd rom Datasheet 4449 LV 1084 PMP 6.24 mobile phone controlled street light monitoring and control system
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Embedded SDK Software Development Kit Targeting Motorola DSP56F80x Platform SDK126/D Rev. 4, 03/21/2003 Motorola, Inc., 2003. All rights reserved. For More Information On This Product, Go to: www.freescale.com


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    PDF DSP56F80x SDK126/D 1117 ADC 558 QUAD TIMER pmp 7.24 DSP56F807 220v DC MOTOR SPEED CONTROLLER brushless motors cd rom Datasheet 4449 LV 1084 PMP 6.24 mobile phone controlled street light monitoring and control system

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27224-2Ea ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM


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    PDF DS04-27224-2Ea MB3881 MB3881

    MB3881PFF

    Abstract: CPH3106 CPH3206 F02J9 MB3881 NDS355AN SLF6028T-150M1R0 SLF6028T-330MR69 VT100 Capacitor 0.22 uF
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27224-2Ea ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM


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    PDF DS04-27224-2Ea MB3881 MB3881 MB3881PFF CPH3106 CPH3206 F02J9 NDS355AN SLF6028T-150M1R0 SLF6028T-330MR69 VT100 Capacitor 0.22 uF

    FEBFSFR2100_D015V1

    Abstract: bobbin EER3542 EER3542 core FEBFSFR2100 H11AB17 FSFR2100 LLC resonant transformer samwha 220uF 35V 340VDC fsfr2100-nd
    Text: User Guide for FEBFSFR2100_D015v1 Evaluation Board LCD TV Power Supply Featured Fairchild Product: FSFR2100 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2011 Fairchild Semiconductor Corporation


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    PDF FEBFSFR2100 D015v1 FSFR2100 D015v1 FEBFSFR2100_D015V1 bobbin EER3542 EER3542 core H11AB17 FSFR2100 LLC resonant transformer samwha 220uF 35V 340VDC fsfr2100-nd

    Untitled

    Abstract: No abstract text available
    Text: User Guide for FEBFL7730_L20L008A 8.4W LED Bulb Using FL7730 Featured Fairchild Product: FL7730 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2012 Fairchild Semiconductor Corporation


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    PDF FEBFL7730 L20L008A FL7730

    Samwha Electrolytic capacitor 47uf 400v

    Abstract: No abstract text available
    Text: User Guide for FEBFL7730_L20H008A 8.4W LED Bulb Using FL7730 Featured Fairchild Product: FL7730 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2012 Fairchild Semiconductor Corporation


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    PDF FEBFL7730 L20H008A FL7730 Samwha Electrolytic capacitor 47uf 400v

    3DU41

    Abstract: D0-201AD c05w origin semiconductor rectifier
    Text: TOSHIBA 3DU41 TOSHIBA DUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3DU41 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = 2 00 V AV = 3-0a trr= 100ns (MAX.)


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    PDF 3DU41 100ns D0-201AD 3DU41 D0-201AD c05w origin semiconductor rectifier

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 3DU41 TOSHIBA DUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3DU41 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V rrm = 200V AV = 3-o a trr= 100ns (MAX.)


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    PDF 3DU41 100ns

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 3DZ41,3LZ41 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 3DZ41, 3LZ41 U nit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS • A verage Forward Current : Ip AV = 3-0A • Repetitive Peak Reverse Voltage : V rrjv [ = 200, 800V • Peak One Cycle Surge Forward Current (Non Repetitive)


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    PDF 3DZ41 3LZ41 3DZ41, 3DZ41 30X30m

    IN1733A

    Abstract: 1N1733A IN1733 1N173A 1N1731A IN1731A 1N1734A I960 MIL-STD-750 METHOD 2036 conditions E ML-733
    Text: MIL-S-19500/K2A 13 May 196/« SUPERSEDING MIL-S-19500/142 SigC 20 September I960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, SILICON, HIGH VOLTAGE RECTIFIER TYPES 1N1731A, 1N1733A, AND 1N173AA Tliis specification has been approved by the Department of Defense and is man­


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    PDF MIL-S-19500/K2A MIL-S-19500/I42 IN1731A, 1N1733A, 1N173AA 1/120-sec; 1N1731A 1N1733A 1N173U MIL-S-19500. IN1733A IN1733 1N173A IN1731A 1N1734A I960 MIL-STD-750 METHOD 2036 conditions E ML-733

    military part marking symbols jan

    Abstract: jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M
    Text: MIL SPECS iclooooias 0002300 L> f MIL-S-19500/2021 AMOEDMOrr 2 14 December 1964 supebsedS g D C K »T 1 3 December 1963 MILITARY SPECIFICATl« SEMICONDUCTOR DEVICES, DIODES, SILICCB, POWER BECTLFTEBS, TYPES JAN-1 N538, JAN-1#540 AMD JAI-1*547 This amendment forms a part of Military Specification MIL-S-19500/2C2A,


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    PDF DDQQ125 MEL-S-19500/2D21 JAN-1N538, JAN-1N540 JA1-U547 MIL-S-19500/202A, MIL-S-19500 MEL-STD-750. MIL-S-19491 MIL-S-19500. military part marking symbols jan jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M

    1N3190

    Abstract: 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189
    Text: MIL SPECS | 00DQ15S DODlOTb b I MIL-S-19500/155E NAVY NOTICE 1 25 September 1986 I NOTICE I |OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENEERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES MIL-S-19500/155E(NAVY), dated 2 July 1974, has been reviewed & determined to be valid


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    PDF 00DD15S MIL-S-19500/155E 1N3189, 1N3190, 1N3191, 000D1HS 1QE17 MIL-S-19500/155D 1N3190 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189

    diode IN457

    Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
    Text: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September


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    PDF MIL-S-19500/193C 1N457, 1N458, 1N459 MIL-S-19500 5961-A371) diode IN457 JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier

    1N3190

    Abstract: 1N3189 1N3191 1N3189 JAN IN3191 MARKING 34 MIL-S-19500 1N3189 44S3 diode VSF 200
    Text: u n -c.i0tnn/tctcikuvv\ i-i* â - - * j - a j j u u / i ^ 2 July 197 m_ SUPERSEDING M I L - S - 1 9 5 0 0 / 1 5 5 D NAVY 23 November 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES


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    PDF MIL-S-19500/155E MIL-S-19500/155D 1N3189, 1N3190, 1N3191, MIL-S-19500, MIL-S-19500. MIL-S-19500 59M-N591) 1N3190 1N3189 1N3191 1N3189 JAN IN3191 MARKING 34 MIL-S-19500 1N3189 44S3 diode VSF 200