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    ORIGIN DIODE SP Search Results

    ORIGIN DIODE SP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ORIGIN DIODE SP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAR66

    Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
    Text: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode


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    Untitled

    Abstract: No abstract text available
    Text: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing


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    PDF M2408N SM02-06CXC504 M1825NC020-060

    6000A 16 1

    Abstract: m2408n
    Text: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing


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    PDF M2408N SM02-06CXC504 M1825NC020-060 6000A 16 1

    Socket Modules

    Abstract: Section 3 MOV SUPPRESSOR RC SUPPRESSOR varistor relay wiring diagram A2 diode 70-ASMM-120 Relay coil ind cont eq METAL OXIDE VARISTOR
    Text: SECTION 3 Advantages of the 70-SM Module System Magnecraft plug in modules are available in many variations allowing coverage for most applications on the market. The Metal Oxide Varistor MOV circuit protects by shunting potentially damaging electrical spikes away from the relay coil. The


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    PDF 70-SM Socket Modules Section 3 MOV SUPPRESSOR RC SUPPRESSOR varistor relay wiring diagram A2 diode 70-ASMM-120 Relay coil ind cont eq METAL OXIDE VARISTOR

    FS1J3

    Abstract: origin diode Schottky Diode 30V 1A SOD123 toshiba battery charger Power DIODES, toshiba Nihon EP10QY03 d1651 B130LAW toshiba smd diode toshiba diode 1A
    Text: New Product Announcement August 2002 Compact, High-efficiency SOD-123: B130LAW! Uses 35-40% Less Board Space Than Other 1 Amp SMD’s E D SOD-123 A B G H C J Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D  1.35 E 0.55 Typical G  0.25 H 0.15 Typical


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    PDF OD-123: B130LAW! OD-123 OD-123 380mV B130LAW EP10QY03; 470mV 420mV CRS01; FS1J3 origin diode Schottky Diode 30V 1A SOD123 toshiba battery charger Power DIODES, toshiba Nihon EP10QY03 d1651 toshiba smd diode toshiba diode 1A

    ISO 8015 tolerance

    Abstract: g8HN-1a4T omron g8HN-1C4T-rH g8HN-1C4T omron g8HN-1C4T suppressor rj g8hn 1c4t g8hn-1a4t-rj g8HN-1C4T-rH
    Text: G8HN Automotive Micro ISO relay General, multi-purpose relay • 12VDC, 24VDC coil • High-wattage • Surge suppression, diode type available • Fully sealed type Protective structure • Bracket and rubber suspension type available • High wattage type meets mini ISO wattage specification


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    PDF 12VDC, 24VDC ISO 8015 tolerance g8HN-1a4T omron g8HN-1C4T-rH g8HN-1C4T omron g8HN-1C4T suppressor rj g8hn 1c4t g8hn-1a4t-rj g8HN-1C4T-rH

    ISO 8015 tolerance

    Abstract: omron g8HN-1C4T omron g8HN-1C4T-rH g8hn-1a4t-rj g8HN-1a4T omron g8HN-1A4T-RJ g8HN-1C4T-rH g8HN-1C4T g8hn 1c4t G8HN-1A2T-Rh
    Text: G8HN Automotive Micro ISO relay General, multi-purpose relay • 12VDC, 24VDC coil • High-wattage • Surge suppression, diode type available • Fully sealed type Protective structure • Bracket and rubber suspension type available • High wattage type meets mini ISO wattage specification


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    PDF 12VDC, 24VDC ISO 8015 tolerance omron g8HN-1C4T omron g8HN-1C4T-rH g8hn-1a4t-rj g8HN-1a4T omron g8HN-1A4T-RJ g8HN-1C4T-rH g8HN-1C4T g8hn 1c4t G8HN-1A2T-Rh

    zt3243leea

    Abstract: zt3243 ZT3243LEEY zt3243l ZT3243E ZT3243F zt3243eea ZT3241LEEA Zywyn ZT3243LE
    Text: ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Zywyn Corporation ZT3241E/ZT3243E Zywyn ZT3241E/ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Features General Description • Meets or Exceeds the EIA/TIA-232F and CCITT V.28/V.24 Specifications for VCC at +3.3V ±10%


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    PDF ZT3243E 250kbps RS232 ZT3241E/ZT3243E EIA/TIA-232F EIA/TIA-232 EIA/TIA-562 zt3243leea zt3243 ZT3243LEEY zt3243l ZT3243F zt3243eea ZT3241LEEA Zywyn ZT3243LE

    Photo IC

    Abstract: hamamatsu photoreflector data
    Text: Photo IC 1 Illuminance sensors 1-1 Photo IC diodes 1-2 Light-to-frequency converter photo IC 2 Transmitter/receiver photo IC for optical link 2-1 General-purpose type 2-2 For MOST networks 150 Mbps CHAPTER 04 7 Applications 7-1 Simple illuminometers 7-2 High-speed digital transmission


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    PDF KPICC0150EC Photo IC hamamatsu photoreflector data

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Ratings and Characteristics Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Ratings and Characteristics process to minimise forward voltage losses, and being majority carrier devices have no stored charge. They are therefore capable of operating at extremely high speeds.


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    Abstract: No abstract text available
    Text: STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is


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    PDF STPS6045HR ESCC5000 O-254 STPS6045HR STPS6045CFSY1 STPS60 DocID18184

    h8ps OMRON Operation Manual

    Abstract: OMRON BF 302 H8PS-8BF mounting manual E6CP-AG5C-C H8PS-8BP OMRON H8Ps Y92S-40 H8PS-8BFP H8PS-32BP XG4M-2030
    Text: Cam Positioner H8PS CSM_H8PS_DS_E_2_1 This Compact Cam Positioner, Popular for Its Ease-of-use, Now Comes with Even Better Functions. • Compact 8-, 16-, and 32-output Models available that are 1/4DIN size at 96 x 96 mm. • High-speed operation at 1,600 r/min and high-precision settings


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    PDF 32-output H8PS-16 h8ps OMRON Operation Manual OMRON BF 302 H8PS-8BF mounting manual E6CP-AG5C-C H8PS-8BP OMRON H8Ps Y92S-40 H8PS-8BFP H8PS-32BP XG4M-2030

    Cu80

    Abstract: diode 4148 specification diode 4148 in 4148 78min UBR100
    Text: Technical specification Page 1 Pages 2 Chip for silicon switching diode Type: 1N 4148 chip size 0,28 х 0,28 mm Diameter of wafer Sizes of chip F/2 100 mm 0,28 х 0,28 mm А B 170 ± 10 µm C 50 ± 5 µm D 140 ± 20 µm Metallization of planar side V - Ag


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    PDF Ag-15% Cu80 diode 4148 specification diode 4148 in 4148 78min UBR100

    Untitled

    Abstract: No abstract text available
    Text: Amphenol Aerospace 38999 III HD Dualok II I SJT Accessories Aquacon Herm/Seal PCB High Speed Fiber Optics Contacts Connectors 5015 Matrix|Pyle Class L 22992 Crimp Rear Release Matrix Pyle 26500 83723 III 26482 Matrix 2 EMI Filter Transient Cables Transient Protection


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    h8ps OMRON Operation Manual

    Abstract: XW2d-20G6 h8ps-16bp OMRON BF 302 E5ZE-CBL200 U2C-MF20BK E6C3-AG5C omron H8PS-8BFP EN61000-4-2 limit switch cam type
    Text: Cam Positioner H8PS CSM_H8PS_DS_E_4_1 This Compact Cam Positioner, Popular for Its Ease-of-use, Now Comes with Even Better Functions. • Compact 8-, 16-, and 32-output Models available that are 1/4DIN size at 96 x 96 mm. • High-speed operation at 1,600 r/min and high-precision settings


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    PDF 32-output H8PS-16 h8ps OMRON Operation Manual XW2d-20G6 h8ps-16bp OMRON BF 302 E5ZE-CBL200 U2C-MF20BK E6C3-AG5C omron H8PS-8BFP EN61000-4-2 limit switch cam type

    Untitled

    Abstract: No abstract text available
    Text: 1N6642U Aerospace 0.3 A - 100 V switching diode Datasheet - production data Description This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2D


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    PDF 1N6642U ESCC5000 1N6642U DocID16972

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. HV5408B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features General Description Processed with HVCMOS technology Low power level shifting SOURCE/SINK current minimum 20mA Shift register speed 8.0MHz Latched data outputs


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    PDF HV5408B 32-Channel HV5408B DSFP-HV5408B A042811

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. HV5308B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features General Description Processed with HVCMOS technology Low power level shifting Source/sink current minimum 20mA Shift register speed 8.0MHz Latched data outputs


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    PDF HV5308B 32-Channel HV5308B DSFP-HV5308B C042811

    HV5308PG-B

    Abstract: HV5308PG-B-G
    Text: Supertex inc. HV5308B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features ►► Processed with HVCMOS technology ►► Low power level shifting ►► Source/sink current minimum 20mA ►► Shift register speed 8.0MHz ►► Latched data outputs


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    PDF HV5308B 32-Channel HV5308B DSFP-HV5308B B072213 HV5308PG-B HV5308PG-B-G

    pj 44 diode

    Abstract: No abstract text available
    Text: Supertex inc. HV5408B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features ►► ►► ►► ►► ►► ►► ►► ►► Processed with HVCMOS technology Low power level shifting SOURCE/SINK current minimum 20mA Shift register speed 8.0MHz


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    PDF 32-Channel HV5408B HV5408B DSFP-HV5408B A042811 pj 44 diode

    origin diode

    Abstract: MD-36N4 A1sm
    Text: SILICO N HIGH VO LTA G E R E C TIFY IN G DIODE MD- 3 6 N4 • |J - ORIGIN ELECTRIC CO LT» • S S 5ÖE D 3gJS äft*<*#L'o 400mA o 2. • 2. K I 6 * - r 7° bôl3074 QQaQGS3 73T • I. FEATURES 1. Axial lead type. 2. Io = 400 mA. I0RIJ /~0 t-O J APPLICATIONS


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    PDF MD-36N4 25TCa+ 400mA( l3074 50HzjE3Â 400mA origin diode MD-36N4 A1sm

    HIGH VOLTAGE DIODE kv

    Abstract: MZ-10HV MZ-10HTE1 MZ-13HTE1 MZ-4HV
    Text: I5J S IL IC O N H IG H V O L T A G E Œ 7 x -Η ORIGIN • M Z -r ELECTRIC CO LTD SflE » . • /£*& Ta = 2 5 r , m * fi -s m a VP T ype I E # * b ö l3 Q 7 4 □ □ 00072 b^D I0RIJ FEATURES 1. High voltage zener diode (up to 10 kV . 2. Low differential resistance o f avalanche breakdow n area.


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    PDF l3Q74 MZ-10HV MZ-10HTE1 MZ-13HTE1 MZ-10HTE1, MZ-13HTEl HIGH VOLTAGE DIODE kv MZ-13HTE1 MZ-4HV

    1N830A

    Abstract: mil-s-19500
    Text: M I L - S - 19500/229 NAVY AMENDMENT 1 25 April 1966 MILITARY SPECIFICATION SEMI CONDUCTOR DEVICE, DIODE, TYPE 1N830AM This amendment forms a part of Military Specification'MIL-S-19500/229(NAVY), 29 June 1962. Page 1, Title: Delete and substitute: "SEMICONDUCTOR DEVICE, DIODE, TYPE 1N830A".


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    PDF MIL-S-19500/229 1N830AM 1N830A" MIL-S-19500, 1N830AM" 1N830A mil-s-19500

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photodiodes for Direct Detection ref 1to5 T h e Ham am atsu S 53 77 series and S 42 76 series are iarge-area photodi­ odes specifically designed for the direct detection of high-energy charged particles and x-rays. Ham am atsu also provides the S 53 78 series 2-D


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    PDF KPSDA0037EA KPSDA0036EB KPSDA0038EA