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    ON 5295 TRANSISTOR Search Results

    ON 5295 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ON 5295 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HP8563E

    Abstract: MGA-632P8 cm05x5r104k10ah VHF lna 30 to mga632p8 8753ES RO4350 MCR01MZS C10402
    Text: MGA-632P8 1.9 GHz low noise amplifier using MGA-632P8 Application Note 5295 Introduction Circuit Description The MGA-632P8 is a GaAs EPHEMT with an integrated active bias. The target applications are Tower Mounted Amplifier / Main LNA for cellular infrastructure including


    Original     		PDF MGA-632P8 MGA-632P8 ATF-34143 AV01-0379EN AV02-1109EN HP8563E cm05x5r104k10ah VHF lna 30 to mga632p8 8753ES RO4350 MCR01MZS C10402

    SKHI 65

    Abstract: semikron IGBT semikron SKHI 64 SEMIKRON SKHI 65 SKHI 64 Semikron Skai 2 skm200gb123d igbt driver SKHI 23/12 semikron SKHI 21 semikron ASIC SKIC
    Text: ✓ plug + play ✓ vollständiger Schutz ✓ 4kV Isolationsspannung ✓ einfache Anwenderschnittstelle ✓ DC-DC-Wandler integriert IGBT und MOSFET SKHI - Treiber Integrierte Komponenten und Integrierte Lösungen SEMIKRON - IGBT/MOSFET Ansteuerungen SKHI


    Original     		PDF D-90253 SKHI 65 semikron IGBT semikron SKHI 64 SEMIKRON SKHI 65 SKHI 64 Semikron Skai 2 skm200gb123d igbt driver SKHI 23/12 semikron SKHI 21 semikron ASIC SKIC

    SEMIKRON SKHI 65

    Abstract: SKHI 65 Semikron Skai 2 SKM75GB123D semikron IGBT semikron skai igbt trigger by opto skhi 64 Semikron skai mosfet single phase inverter IGBT driver
    Text: ✓ plug + play ✓ protection ✓ easy interface ✓ integrated DC-DC converter ✓ 4kV isolation IGBT and MOSFET SKHI - Drivers Integrated Components and Integrated Solutions SEMIKRON - IGBT/MOSFET Drivers SKHI SEMIKRON - Driver ASICs SKIC SKHI-DRIVER ✓ Protection


    Original     		PDF D-90253 SEMIKRON SKHI 65 SKHI 65 Semikron Skai 2 SKM75GB123D semikron IGBT semikron skai igbt trigger by opto skhi 64 Semikron skai mosfet single phase inverter IGBT driver

    ZZ001

    Abstract: "Isolation Amplifiers" INA117KU
    Text: INA117 INA 117 INA 117 www.ti.com High Common-Mode Voltage DIFFERENCE AMPLIFIER FEATURES APPLICATIONS ● COMMON-MODE INPUT RANGE: ±200V VS = ±15V ● PROTECTED INPUTS: ±500V Common-Mode ±500V Differential ● UNITY GAIN: 0.02% Gain Error max ● NONLINEARITY: 0.001% max


    Original     		PDF INA117 INA117 sboc004 ZZ001 "Isolation Amplifiers" INA117KU

    HX8257A

    Abstract: s534 diode HX8257-a g434 diode s448 schottky diode S698 DIODE Himax HX8257-A HX8257-A01 Himax CKV 2310
    Text: DOC No. HX8257-A01-DS HX8257-A01 480RGBX272 TFT LCD Single Chip Digital Driver Version 01, November 2008 HX8257-A01 480RGBX272 TFT LCD Single Chip Digital Driver Version 01 November 2008 1. 2. 3. 4. 5. 6. 7. General Description . 4


    Original     		PDF HX8257-A01-DS HX8257-A01 480RGBX272 68November, HX8257-A01BPDXXX 69November, HX8257A s534 diode HX8257-a g434 diode s448 schottky diode S698 DIODE Himax HX8257-A HX8257-A01 Himax CKV 2310

    STM32 IWDG

    Abstract: UM0320 8054 REGULATOR MAX21000 RM0312 UFQFPN28 UFQFPN48 STM8TL53 PWM 50a8 STM8 programming manual
    Text: STM8TL53C4 STM8TL53G4 8-bit ultralow power touch sensing microcontroller with 16 Kbytes Flash, ProxSense , timers, USART, SPI, I2C Preliminary data Features • Operating conditions – Operating power supply: 1.65 V to 3.6 V – Temperature range: –40 °C to 85 °C


    Original     		PDF STM8TL53C4 STM8TL53G4 STM32 IWDG UM0320 8054 REGULATOR MAX21000 RM0312 UFQFPN28 UFQFPN48 STM8TL53 PWM 50a8 STM8 programming manual

    on 5295 transistor

    Abstract: transistor on 5295 BD529 transistors bd525 bd530
    Text: DF|b3b72S4 MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA. SC ÍXSTRS/R 9 6D 8 0 6 0 7 F DDflObO? S f ~ D T - 3 3 - Ó 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON AMPLIFIER TRANSISTORS 6 0 -8 0 - 100 VOLTS 10 WATTS N PN SILICON ANNULAR* AMPLIFIER TRA N SISTORS


    OCR Scan     		PDF b3b72S4 BD525 BD527 BD529 BD526, BD528, BD530 BD525, BD52C on 5295 transistor transistor on 5295 transistors bd525

    MRF1008MC

    Abstract: No abstract text available
    Text: IS E 3 I t3ti75SM GGfiTTflM 4 | MOTORCLA SC XSTRS/R F MOTOROLA SEM ICO NDUCTOR MRF1008MA MRF1008MB MRF1008MC TECHNICAL DATA The R F L in e 8.0 W P E A K 9 6 0 -1 2 1 5 M H z MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS N P N S IL IC O N . . . design ed for C la ss B and C com m on-base amplifier applications


    OCR Scan     		PDF t3ti75SM MRF1008MA MRF1008MB MRF1008MC MRF1008MA, MRF1008MB, MRF1008MC

    bd529

    Abstract: transistors bd525 BD530 B0525 BD525 BD525-1 BD525-5 BD526 BD527 BD528
    Text: MOTOROLA SC 6367254 ÍXSTRS/R DF|b3b72S4 F> MOTOROLA. SC ÍXSTR S/R 96 D 8 0 6 0 7 F T DDflObO? S D - 3 3 - 0 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON A M PLIFIER TR A N SISTO R S 6 0 - 8 0 - 100 VOLTS 10 WATTS NPN SILICON AN N ULAR* A M P LIFIER TR A N S IS TO R S


    OCR Scan     		PDF b3b72S4 BD525 BD527 BD529 BD526, BD528, BD530 B0525. BD525-1. bd529 transistors bd525 BD530 B0525 BD525-1 BD525-5 BD526 BD528

    2N438b

    Abstract: 2N1702 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899
    Text: 15 SILICON POWER TRANSISTORS S A T U R A T IO f SI VO LTAG ES CUR REIN T G A IN TYPE NUMBER CASE TYPE V CBO V o < m O @> V EBO V h F I: M IN . I M A X . vCE @ 'c V A *C A VCE s VBE(s) V , V *B A 2 AMP SILICON P MP Observe (— ) Negative P olarity 2N3782


    OCR Scan     		PDF 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 SDT3501 2N438b 2N1702 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899

    rca 40411

    Abstract: RCA 40411 transistor 2N6259 RCA 2N5295 RCA 2n3773 rca 2n3055 application note 40411 transistor audio amplifier with rca 40411 2N3055 pnp series voltage regulator transistor BDY29
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 rca 40411 RCA 40411 transistor 2N6259 RCA 2N5295 RCA 2n3773 rca 2n3055 application note 40411 transistor audio amplifier with rca 40411 2N3055 pnp series voltage regulator transistor BDY29

    2N5296 RCA

    Abstract: RCA 40373 amplifier ocl 2n3055 2N3055 RCA 40347 2N5415 2N3442 2N6262 40328 2N1482
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2N5296 RCA RCA 40373 amplifier ocl 2n3055 2N3055 RCA 40347 2N5415 2N3442 2N6262 40328 2N1482

    on 5295 mosfet transistor

    Abstract: on 5295 mosfet 5291 8-pin tl494 24v ic 5291 8-pin 4000 series CMOS Logic levels 18 - 24v on 5297 transistor tl494 mosfet driver TC429 tc429cp
    Text: w r seiwom ~ Semiconductor, Inc. TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level transla­ tor and driver. Designed specifically to drive highly capaci­ tive power WIOSFET gates, the TC429 features 2.5H output


    OCR Scan     		PDF TC429 TC429 2500pF 25nsec. 60nsec. on 5295 mosfet transistor on 5295 mosfet 5291 8-pin tl494 24v ic 5291 8-pin 4000 series CMOS Logic levels 18 - 24v on 5297 transistor tl494 mosfet driver tc429cp

    Untitled

    Abstract: No abstract text available
    Text: IN T E G R A T E D C IR C U IT S UC2906 UC3906 U N IT R O D E Sealed Lead-Acid Battery Charger FEATURES DESCRIPTION • The UC2906 series of battery charger controllers contains all of the necessary circuitry to optimally control the charge and hold cycle for sealed lead-acid batter­


    OCR Scan     		PDF UC2906 UC3906 UC2906

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 40360 2N6289 40877 BD243 2N5781 2N5954 2N6107 2N6248 2N6292
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . V C E to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 300W TRANSISTOR AUDIO AMPLIFIER 40360 2N6289 40877 BD243 2N5781 2N5954 2N6107 2N6248 2N6292

    RCA 40313

    Abstract: RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. lc • 8 0 A m a x . P t - 3 0 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40313 RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250

    Transistor 2n6099

    Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 Transistor 2n6099 BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344

    rca 2n6103

    Abstract: 2N6101 rca 2N6476 rca RCA 40250 transistor Bf 353 RCA 411 TRANSISTOR TT 2070 2N1482 2N3054 2N5298
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 rca 2n6103 2N6101 rca 2N6476 rca RCA 40250 transistor Bf 353 RCA 411 TRANSISTOR TT 2070 2N1482 2N3054 2N5298

    2N6103

    Abstract: 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6103 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372

    U24A

    Abstract: No abstract text available
    Text: LH543601/11 PRODUCT PREVIEW 256 x 36 x 2 / 512 x 36 x 2 BiFIFOs FEATURES FUNCTIONAL DESCRIPTION • Fast Cycle Times: 15/20/25/30/35 ns The LH543601/11 contain two FIFO buffers, FIFO #1 and FIFO #2. These operate in parallel, but in opposite directions, for bidirectional data buffering. FIFO #1 and


    OCR Scan     		PDF LH543601/11 LH5420 36-bit/512 36-bit 36/18/9-bit LH543601/11 132-Lead, PQFP132-P-S950) 120-Lead, U24A

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    MCR 22-8 transistor power

    Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
    Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.


    OCR Scan     		PDF

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


    OCR Scan     		PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet by HDC/D MOTOROLA HDC SERIES SEMICONDUCTOR TECHNICAL DATA H IG H PER FO R M A NC E T R IP L E LAYER M ETAL HDC SERIES CMOS ARRAYS 1 .0 M IC R O N C M O S A R R A Y S B uilt on a 1.0 m icron, trip le -la y e r metal C M O S process, the HDC


    OCR Scan     		PDF