Untitled
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED SMD Pb Lead-Free Parts LG-008WK-DT-A03 DATA SHEET DOC. NO : QW0905-LG-008WK-DT-A03 REV. : A DATE : 23 - Apr. - 2012 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/13
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LG-008WK-DT-A03
QW0905-LG-008WK-DT-A03
LG-008WK-DT-A03
500hrs
30min)
30mins
15mins
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MA12 transistor
Abstract: No abstract text available
Text: WILLAS FM120-M+ MMBT5401LT1 THRU High MOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M+
MMBT5401LTHRU
FM1200-M+
OD-123+
OD-123H
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
MA12 transistor
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power BJT 1000 volt vce
Abstract: Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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OT223
150mA
FZT560
27-Jun-2011
power BJT 1000 volt vce
Catalog Bipolar Transistor
bjt 500v
transistor BJT
BJT IC Vce
1.2 Volt led boost driver
power bjt transistor 600v
7336
BJT IC Vce 5v
transistor catalog 300 WATT
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marking AT0
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon
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FM120-M+
MMBT3906LTHRU
FM1200-M+
OD-123+
OD-123H
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
marking AT0
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Untitled
Abstract: No abstract text available
Text: WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ THRU MMBT3906TT1 FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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OD-123+
FM120-M+
MMBT3906T
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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Diode 1N41
Abstract: PF7001 CD4583 transistor cd4578 1N7041 1N41 CD4107 2N2326S JANS2N2907A CD4617
Text: Hi-Rel Components from Aeroflex / Metelics Diodes Switching Zener TC Zener Current Regulators Transistors Small Signal Medium & High Power Darlingtons Silicon Controlled Rectifiers JANHC and JANKC Chips DLA Certified JAN–JANS Short Form Catalog August 9, 2012
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DO-35
1N461
1N4616-
MIL-PRF-19500
nMIL-STD-750
nISO9001-2008
SFMHR-8-09-12
Diode 1N41
PF7001
CD4583
transistor cd4578
1N7041
1N41
CD4107
2N2326S
JANS2N2907A
CD4617
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40WT1
Abstract: No abstract text available
Text: WILLAS FM120-M+ BC807-40WT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M+
BC807-40WTTHRU
FM1200-M+
OD-123+
OD-123H
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
40WT1
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ BCW66GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon • Batch process design, excellent power dissipation offers better
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FM120-M+
BCW66GLT1THRU
FM1200-M
OD-123+
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU MMBT2907AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M+
MMBT2907AW
FM1200-M+
OD-123+
OD-123H
M150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
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mbt3904lt1
Abstract: MBT3904L marking code 1AM MBT3904LT
Text: WILLAS FM120-M+ MMBT3904LT1 THRU General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse
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FM120-M+
MMBT3904LTHRU
FM1200-M+
OD-123+
OD-123H
3000/Tape
FM120-MH
FM130-MH
FM140-MH
FM150-MH
mbt3904lt1
MBT3904L
marking code 1AM
MBT3904LT
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E2026
Abstract: No abstract text available
Text: WILLAS FM120-M+ BCW68GLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNPbetter Silicon
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FM120-M+
BCW68GLT1
FM1200-M
OD-123+
OD-123H
M140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
E2026
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ BC:$LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon process design, excellent power dissipation offers • Batch better reverse leakage current and thermal resistance.
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FM120-M+
FM1200-M
OD-123+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU BC817-40WT1 Purpose FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M+
BC817-40WT
FM1200-M+
OD-123+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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MBT3904WT1
Abstract: No abstract text available
Text: NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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MMBT3904W
FM120-M
FM1200-M+
MMBT3906WT1
OD-123+
OD-123H
323/SC
FM120-MH
FM130-MH
FM140-MH
MBT3904WT1
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PM20CHA060
Abstract: 2 anode igbt inverter circuit diagram 3 phase inverters circuit diagram igbt 3 phase inverters circuit diagram igbt PM20CHA060 BP107 T-57-aa PM20CHA06
Text: P OIilEREX ¿ ^ I k J M INC E V S IE T> m 72 i4 b 2 1 DDDSb5f l ObO * P R X P M 20C H A 060 lE A -7= 5 7 - 2 5 Powerex, inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln t G llim O C P '^ - 3 M 0 d u l 0 S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e p ^ a s e
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PM20CHA060
BP107,
Amperes/110-230
PM20CHA060
72T4b21
2 anode igbt inverter circuit diagram
3 phase inverters circuit diagram igbt
3 phase inverters circuit diagram igbt PM20CHA060
BP107
T-57-aa
PM20CHA06
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Untitled
Abstract: No abstract text available
Text: • Micmsemi m m Chatsworth, CA m MB2505 THRU MB2510 Prog ress P ow ered b y Technology 9261 Owensmouth Ave, Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 25 Amp Single Phase Bridge Rectifier 50 to 1000 Volts Mounting Hole For #8 Screw
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MB2505
MB2510
MB-35
MB251
MB252
MB254
MB256
MB258
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BYX120G EHT car ignition diode Preliminary specification File under Discrete Semiconductors, SC01 October 1991 Philips Semiconductors PHILIPS ^ 5 3 ^ 3 1 0035147 Preliminary specification Philips Semiconductors BYX120G EHT car ignition diode
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OCR Scan
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PDF
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BYX120G
QD3S150
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 3BZ41 ,3GZ41,3JZ41,3NZ41 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 3BZ41, 3GZ41, 3JZ41, 3NZ41 Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • • Average Forward Current : Ip AV = 3.0A Repetitive Peak Reverse Voltage : V rr m = 100 —1000 V
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3BZ41
3GZ41
3JZ41
3NZ41
3BZ41,
3GZ41,
3JZ41,
3BZ41
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ILOIf
Abstract: MIG20J806E MIG20J806EA mig20j
Text: T O SH IB A TENTATIVE MIG20J806E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J806E, MIG20J806EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Integrates Inverter, Converter Power Circuits and Thermistor in One Package. Output Inverter Stage
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MIG20J806E/EA
MIG20J806E,
MIG20J806EA
MIG20J806E
2-108E5A
2-108E6A
961001EAA1
b25/85
ILOIf
MIG20J806E
MIG20J806EA
mig20j
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diode E155
Abstract: mig20j
Text: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.
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MIG20J906E/EA
MIG20J906E,
MIG20J906EA
MIG20J906E
2-108E5A
2-108E6A
o--------Bo40-
80Ilo
961001EAA1
diode E155
mig20j
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ST-2124
Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device
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H11AG1
H11AG2
H11AG3
H11AG
ST1603A
ST-2124
ST2122
varistor xf 040
SC160B
3kw triac
GE SC160B triac
C2079
varistor xf
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Untitled
Abstract: No abstract text available
Text: SC O T T SM L L , M is iïiiïr . FEATURES • • • • ECONOMICAL SERIES AVAILABLE IN BOTH UNIDIRECTIONAL AND BIDIRECTIONAL CONSTRUCTION 6.8 TO 200 VOLTS AVAILABLE GOO WATTS PEAK PULSE POWER DISSIPATION P6KE6.8 thru P6KE200A TRANSIENT ABSORPTION MAXIMUM RATINGS
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P6KE200A
QGD37
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Untitled
Abstract: No abstract text available
Text: W h a t HEW LETT PACKARD rnLtim 155 Mbit/s Logic Interface Laser Transmitter for OC3/STM1 Technical Data XMT5360-155 XMT5160-155 Features Description • Full Compliance to SONET/ SDH STM1/OC1-3 The XMT5360-155 and XMT5160-155 laser transmitters are high performance uncooled optical
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XMT5360-155
XMT5160-155
XMT5160-155
5963-5068E
4447S
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CR2AM
Abstract: prx scr 133 CR2AM-12
Text: m ü i B Œ CR2AM K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 L G â d -IT IO U n t Phase Control SCR 2 Amperes/400-600 Volts OUTLINE DRAWING Description: The Powerex CR2AM Lead-mount Phase Control SCRs are glass passivated thyristors for use in low
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Amperes/400-600
O-202)
MAX/10
CR2AM
prx scr 133
CR2AM-12
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