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    OAI22 CAPACITANCE Search Results

    OAI22 CAPACITANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    OAI22 CAPACITANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fan 7320

    Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
    Text: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal


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    PDF OAI22 fan 7320 atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance

    fan 7320

    Abstract: LA 4440 circuit diagram atmel 936 MG2014P MG2044P MG2142P TM1019 0.5-um CMOS standard cell library 4116G
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 490K Cells Utilization Ratio Allows Considering a Design Complexity up to 350K Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates


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    PDF 4116G fan 7320 LA 4440 circuit diagram atmel 936 MG2014P MG2044P MG2142P TM1019 0.5-um CMOS standard cell library

    star delta wiring diagram with timer

    Abstract: atmel 422 ATMEL 634 atmel 946 star delta connection circuit diagrams star delta wiring diagram synopsys Platform Architect DataSheet ttl buffer MG2044E MG2091E
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Available Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


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    PDF 4115H star delta wiring diagram with timer atmel 422 ATMEL 634 atmel 946 star delta connection circuit diagrams star delta wiring diagram synopsys Platform Architect DataSheet ttl buffer MG2044E MG2091E

    atmel 946

    Abstract: X-TAL 20m atmel 422 AtMEL 624 ATMEL 634 OAI22 MG2044E MG2091E MG2140E MG2194E
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 700K Cells 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


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    PDF 4115G atmel 946 X-TAL 20m atmel 422 AtMEL 624 ATMEL 634 OAI22 MG2044E MG2091E MG2140E MG2194E

    MG2RTP

    Abstract: MG2044P MG2142P MG2270P aero MS 3475 4116K
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 270K Available Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


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    PDF 4116K MG2RTP MG2044P MG2142P MG2270P aero MS 3475

    ATMEL 634

    Abstract: 4115I MG2044E MG2091E MG2194E MG2265E MG2360E 0.5-um CMOS standard cell library
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Available Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


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    PDF 4115I ATMEL 634 MG2044E MG2091E MG2194E MG2265E MG2360E 0.5-um CMOS standard cell library

    MG2044P

    Abstract: MG2142P MG2270P 0.5-um CMOS standard cell library
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 270K Available Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


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    PDF 4116I MG2044P MG2142P MG2270P 0.5-um CMOS standard cell library

    32M DPRAM

    Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
    Text: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers


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    PDF Tree65 32M DPRAM MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019

    X-TAL 20m

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to700K Cells 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimised for Synthesis, Floor Plan & Automatic Test Generation ATG


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    PDF to700K X-TAL 20m

    atmel 936

    Abstract: transistor SMD DK synopsys Platform Architect DataSheet MG2044P MG2142P TM1019 0.5-um CMOS standard cell library Atmel 440
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 270K Available Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


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    PDF 4116H atmel 936 transistor SMD DK synopsys Platform Architect DataSheet MG2044P MG2142P TM1019 0.5-um CMOS standard cell library Atmel 440

    AtMEL 624

    Abstract: XTAL SMD Packages atmel 946 0.5-um CMOS standard cell library atmel 044
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Available Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


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    PDF 4115J AtMEL 624 XTAL SMD Packages atmel 946 0.5-um CMOS standard cell library atmel 044

    fan 7320

    Abstract: atmel 936 ttl buffer UART using VHDL MG2014P MG2044P MG2142P MG2270P TM1019
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 490k Cells 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimised for Synthesis, Floor Plan & Automatic Test Generation ATG


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    PDF 484full fan 7320 atmel 936 ttl buffer UART using VHDL MG2014P MG2044P MG2142P MG2270P TM1019

    atmel 424

    Abstract: AMBIT inverter atmel 545 ATMEL 340 crystal oscillator buffer Structure of D flip-flop DFFSR s051 crystal OAI222 CMOS Transmission gate Specifications Tri-State Buffer CMOS
    Text: Features • 0.5 µm Drawn Gate Length 0.45µm Leff Sea-of-Gates Architecture With Triple Level Metal • 3.3V Operation • 5.0V Compatible Input Buffers • On-chip Phase Locked Loop (PLL) Available to Synthesize Frequencies up to 150 MHz • • • •


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    PDF ATL50 0753B 11/99/xM atmel 424 AMBIT inverter atmel 545 ATMEL 340 crystal oscillator buffer Structure of D flip-flop DFFSR s051 crystal OAI222 CMOS Transmission gate Specifications Tri-State Buffer CMOS

    Structure of D flip-flop DFFSR

    Abstract: AOI222 INV4 OAI23 atmel 424 MUX CMOS 0753B 5-input NAND Gates pic single phase inverter OAI22
    Text: ATL50 Features • • • • • • • • 0.5µm Drawn Gate Length 0.45µm Leff Sea-of-Gates Architecture With Triple Level Metal 3.3 Volt Operation 5.0 Volt compatible input buffers On-Chip Phase Locked Loop (PLL) Available to Synthesize Frequencies up to


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    PDF ATL50 ATL50 Structure of D flip-flop DFFSR AOI222 INV4 OAI23 atmel 424 MUX CMOS 0753B 5-input NAND Gates pic single phase inverter OAI22

    MG2265E

    Abstract: MG2360E MG2044E MG2091E MG2194E ATMEL 634 atmel 946
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Available Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


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    PDF 4115K MG2265E MG2360E MG2044E MG2091E MG2194E ATMEL 634 atmel 946

    3 to 8 bit decoder vhdl IEEE format

    Abstract: ATL60 ATLS60 PO61 ttl buffer
    Text: ATL60 Features x x x x x x x x 0.6Pm Drawn Gate Length 0.5Pm Leff Sea-of-Gates Architecture With Triple Level Metal 5.0 Volt, 3.3 Volt, and 2.0 Volt Operation Including Mixed Voltages On Chip Phase Locked Loop Available to Synthesize Frequencies up to 150 MHz and Manage Chip-to-Chip Clock Skew


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    PDF ATL60 ATL60 3 to 8 bit decoder vhdl IEEE format ATLS60 PO61 ttl buffer

    TTL Schmitt-Trigger Inverters

    Abstract: Structure of D flip-flop DFFSR Tri-State Buffer CMOS TTL 3 input or gate ttl buffer TTL nand 3 input or gate 3 input Decoders actel PLL schematic AOI222
    Text: ATL60 Features • • • • • • • • 0.6µm Drawn Gate Length 0.5µm Leff Sea-of-Gates Architecture With Triple Level Metal 5.0 Volt, 3.3 Volt, and 2.0 Volt Operation Including Mixed Voltages On Chip Phase Locked Loop Available to Synthesize Frequencies up to


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    PDF ATL60 ATL60 TTL Schmitt-Trigger Inverters Structure of D flip-flop DFFSR Tri-State Buffer CMOS TTL 3 input or gate ttl buffer TTL nand 3 input or gate 3 input Decoders actel PLL schematic AOI222

    Tri-State Buffer CMOS

    Abstract: PTS41 books schmitt trigger cmos buffer 8x buffer cmos ATL60 ATLS60 mux8n AOI222
    Text: ATL60 Features • • • • • • • • 0.6µm Drawn Gate Length 0.5µm Leff Sea-of-Gates Architecture With Triple Level Metal 5.0 Volt, 3.3 Volt, and 2.0 Volt Operation Including Mixed Voltages On Chip Phase Locked Loop Available to Synthesize Frequencies up to


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    PDF ATL60 ATL60 Tri-State Buffer CMOS PTS41 books schmitt trigger cmos buffer 8x buffer cmos ATLS60 mux8n AOI222

    PO61

    Abstract: ATMEL 340 atmel 424 ATLS60 ATL60 ttl buffer 3.6v Tri-State Buffer bga ambit inverter circuit AOI222 ATMEL 218
    Text: Features • • • • • • • • 0.6 µm Drawn Gate Length 0.5 µm Leff Sea-of-Gates Architecture with Triple Level Metal 5.0V, 3.3V and 2.0V Operation including Mixed Voltages On-chip Phase Locked Loop Available to Synthesize Frequencies up to 150 MHz and


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    PDF ATL60 0388C 11/99/xM PO61 ATMEL 340 atmel 424 ATLS60 ttl buffer 3.6v Tri-State Buffer bga ambit inverter circuit AOI222 ATMEL 218

    atmel 952

    Abstract: atmel h 952 ATL35 vhdl code for flip-flop jk flip flop to d flip flop conversion RTL 204 605 vhdl code for D Flipflop dssb oak dsp AOI222
    Text: Features • High Speed - 150 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 3.7 Million Used Gates and 976 Pins • System Level Integration Technology ™ ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and Lode™DSP Cores, 10T/100 Ethernet MAC, USB and PCI Cores,


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    PDF 10T/100 ATL35 atmel 952 atmel h 952 vhdl code for flip-flop jk flip flop to d flip flop conversion RTL 204 605 vhdl code for D Flipflop dssb oak dsp AOI222

    AOI21

    Abstract: OAI21 UNITED TECHNOLOGIES MICROELECTRONICS CENTER nand gate layout TTL XOR2 operation of sr latch using nor gates UTB Series transistor QB three input OR gate United Technologies Microelectronics
    Text: Semicustom Products UTB Series Gate Array Family Preliminary Data Sheet UNITED _ TECHNOLOGIES MICROELECTRONICS ICENTER FEATURES □ D esign ed for m ilitary/aerospace applications - Operating range: —5 5 °C to 1 2 5 ° C - Supply voltage: 5V + 10% - E SD protection: 2001 V m inim um


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    PDF 150mA 617-890-UTMC UTB-3-11 -86-DS AOI21 OAI21 UNITED TECHNOLOGIES MICROELECTRONICS CENTER nand gate layout TTL XOR2 operation of sr latch using nor gates UTB Series transistor QB three input OR gate United Technologies Microelectronics

    ut161

    Abstract: bip 373 UT162 AOI13 UT163 half adder circuit using 2*1 multiplexer G/transistor bip 109 UT169 SCA92 AOI21
    Text: Radiation-Hardened Semicustom Products UTD-R Gate Array Family Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER April 1990 FEA TU RES □ Total dose 1 x 106 rads Si to this data sheet specification according to M IL-STD-883, M ethod 1019 □ Total dose 1 x 107 rads (Si) functional


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    PDF IL-STD-883, cobalt-60 150mA 500msec -3-4-90-PD ut161 bip 373 UT162 AOI13 UT163 half adder circuit using 2*1 multiplexer G/transistor bip 109 UT169 SCA92 AOI21

    AOI222

    Abstract: P02B OAI222
    Text: ATL50 Features • • • • • • • • 0.5|.im Drawn Gate Length 0.45|am Left Sea-of-Gates Architecture With Triple Level Metal 3.3 Volt Operation 5.0 Volt compatible input buffers On-Chip Phase Locked Loop (PLL) Available to Synthesize Frequencies up to


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    PDF ATL50 ATL50 AOI222 P02B OAI222

    MQFPL160

    Abstract: No abstract text available
    Text: T em ic MG2RT Semiconductors Radiation Tolerant 0.5-jiim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured


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    PDF OAI22 MQFPL160