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    OA 1172 Search Results

    OA 1172 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    R5F21172DSP Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion), , / Visit Renesas Electronics Corporation
    R5F21172SP Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion), , / Visit Renesas Electronics Corporation
    8N3S270KC-1172CDI Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
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    OA 1172 Price and Stock

    ROA1172953/1 ROA1172953/1R1D

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    Bristol Electronics ROA1172953/1R1D 18
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    OA 1172 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SEN-3076 TECHNICAL DATA PART NUMBER: SEN-3076 PARALLEL REDUNDANT LEVEL TRANSLATOR DESCRIPTION: PARALLEL REDUNDANT LEVEL TRANSLATOR, HYBRID MICROCIRCUIT. o MAXIMUM RATINGS All ratings are at TA = 25 C unless otherwise specified. RATING


    Original
    SEN-3076 10ABC, 10ABF 10BCF PDF

    Untitled

    Abstract: No abstract text available
    Text: u v m _ i b s TECHNOLOGY M ic ro p o w e r D C /D C C o n ve rte r A d ju sta b le a n d Fixed 5V, 12V F€flTUR€S D CSCRIPTIOfl • Operates at Supply Voltages from 2V to 30V ■ Consumes Only 110|oA Supply Current ■ Works in Step-Up or Step-Down Mode


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    LT1108 LT1108 V-20V 200mA 500mA Q01Q3E4 PDF

    S320S7

    Abstract: S340S7 S360S7
    Text: R S M ELECTRON/SENS ITRON T -0 3 -I5 " 1SE D § 7SG3t5G DDD07t0 ? | ^VSENS/TRON_ * SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 F A X 516 242 9798 TECHNICAL SPECIFICATIONS HIGH CU RREN T A X IA L LEAD


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    S320S7 S340S7 S360S7 PDF

    TRANSISTOR 132-gd

    Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
    Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n


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    06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes PDF

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    PDF

    MIL-T-27

    Abstract: H1000 INDUCTOR inductor H330 52kH tf5r
    Text: DESIGNED FOR NATIONAL SEMICONDUCTOR MILITARY/AEROSPACE QUALIFIED SIMPLE SWITCHER Designed for use with M IL-STD-883C qualified National Semicon­ ductor Device numbers LM 15 75 and LM 15 77. Renco component operation validated by National Semiconductor.


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    IL-STD-883C MIL-T-27, MIL-45208 RL3459 MIL-T-27 H1000 INDUCTOR inductor H330 52kH tf5r PDF

    RL-2580

    Abstract: RL-1961 RL-2581 RL1961 RL1952 renco rl 2580 renco rl2448 National Semiconductor Applications RL-2445 RL2447
    Text: MAY 1996 TRANSFORMERS & CHOKES FOR NATIONAL SEMICONDUCTOR* APPLICATIONS u ms </>•= oS rm SINCE 1955 Renco Electronics POWER LINE CHOKES FOR NATIONAL SEMICONDUCTOR APPLICATIONS T h is P o w e r Line C h o ke S e rie s uses high s a tu ra tio n flu x d e n s ity m a te ria l m a k in g th e m id e a l fo r use in


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    RL-1954 RL-19 250nH 250jiH RL-2580 RL-1961 RL-2581 RL1961 RL1952 renco rl 2580 renco rl2448 National Semiconductor Applications RL-2445 RL2447 PDF

    KS0066F00

    Abstract: No abstract text available
    Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The KS0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.


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    KS0066 KS0066 32kinds KS0066FQ0, 71b414E 60-QFP-UUA Q0220b7 98-STAB-35mm 120-STAB-35mm KS0066F00 PDF

    Untitled

    Abstract: No abstract text available
    Text: MIL •M-38 5 IOw M B P T 16 April 1980 MILITARY SPECIFICATION MICROCIRCUITS, CMOS, ANALOG SWITCH WITH DRIVER, MONOLITHIC SILICON This specification is approved for use by aLl Depart­ ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, CMOS,


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    MIL-M-38510. NOT510/116 MIL-M-38 MIL-M-38510 MIL-M-38510 PDF

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF

    Untitled

    Abstract: No abstract text available
    Text: RC2324DP/DS Integral Modems Rockwell RC2324DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2324DP/DS is a 2400 bps, lull-duplex, OEM, data pump modem device s e t The RC2324DP/DS operates over the public switched telephone network


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    RC2324DP/DS RC2324DP/DS 212Aand character38 64-Pin 40-Pin PDF

    R96FAX

    Abstract: No abstract text available
    Text: MODEM PRODUCTS DATA BOOK <1 Rockwell International Semiconductor Products Division Rockwell International Corporation 1987 All Rights Reserved Printed in U.S.A. Order No. 1 February, 1987 Rockwell Sem iconductor Products Division is headquartered in Newport Beach, California with Field


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: EPSON PF836-02 SEDI 670 Dot Matrix High Duty LCD Driver • 100 Output • 1/64 to 1/300 in display duty • CMOS High Voltage Resistant Process • OVERVIEW T he S E D 1 670 is a 100 output low-power resistance common row driver which is suitable for driving a very high


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    PF836-02 SED1670 SED1631* SED1635* 33b4134 GG0372G G-219 PDF

    taa 723

    Abstract: SRS660
    Text: SRS660 ^S E N S IT R O N SEMICONDUCTOR TECHNICAL DATA DATASHEET 132 REVISION — 6/93 600 VOLT, 6 AMP GLASS HERMETIC SEALED AXIAL LEAD RECTIFIERS FEATURES • • • • DOUBLE PLUG, METALLURGICALLY BONDED CONSTRUCTION. HIGH VOLTAGE, HIGH CURRENT. HIGH SU R G E CAPABILITY.


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    SRS660 SRS660 ra100Â 7S03t taa 723 PDF

    1N4933

    Abstract: 1N4934 1N4935 1N4936 1N4937 1N4942
    Text: 1N 4933 TH R U 1N 4937 FAST SWITCHING VOLTAGE - 50 to 600 Volts PLASTIC RECTIFIER CURRENT - 1.0 Ampere FEATURES DO-41 • H ig h s u rg e c u r re n t c a p a b ility . • P la s tic p a c k a g e h a s U n d e rw rite rs L a b o ra to ry F ia m m a b ility C la s s ific a tio n 9 4 V - 0 u tiliz in g


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    1N4933 1N4937_ DO-41 MIL-S-19500/228 MIL-STD-202, 1N4934 1N4935 1N4936 1N4937 1N4942 PDF

    Untitled

    Abstract: No abstract text available
    Text: S£NS^TfíQ^§gMlOÓNOUCTOR PEAK INVERSE VOLTAGE TYPE ' NUMBER . Vote . 150 SHCNA15HFT 15G SMCPA1SHË» 1 150 SHCOA6QFR 600 SHCNA6ÛFR *600 r J3HCPA6GFR' . ~ m •690 ‘ SHCMA68s 7 ' m SHÊPA6GE7' ’ 1 600 1000 EESSSEKn SHCNAIOOFH’* ' 1000 SH PAt00F»#|


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    SHCNA15HFT SHCMA68s PAt00F» 1000SHCDAIOQHT SHCNA100V SHCPA10QV R0417 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1994 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC AXIAL LEAD RECTIFIERS Continued GENERAL PURPOSE DEVICES (Trr £5000 ns) TYRE NUMBER PEAK INVERSE VOLTAGE VOLTS MAX. AVG. DC OUTPUT CURRENT MAX. REVERSE CURRENT AT PIV MAX. PEAK FWD. VOLTAGE (PULSED)


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    1N3611 1N3612 1N3613 1N3614 1N3957 1N4245 1N4246 1N4247 1N4248 1N4249 PDF

    1N5811

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 1995 SHORTFORM CATALOG HERMETIC SURFACE MOUNT RECTIFIERS MELFS GENERAL PURPOSE (Trr TYPE NUMBER PEAK INVERSE VOLTAGE 2000 nsec) MAXIMUM AVERAGE DC OUTPUT CURRENT AMPS VOLTS Ta = 55°c PEAK SINGLE CYCLE SURGE (8.3 mS) MAXIMUM FORWARD


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    1N5614US 1N5616US 1N5618US 1N5620US 1N5622US 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US 1N5811 PDF

    Untitled

    Abstract: No abstract text available
    Text: UF1A THRU UF1K SURFACE MOUNT ULTRAFAST RECTIFIER VOLTAGE - 50 TO 800 Volts CURRENT - 1.0 Ampere _ FEATURES_ SMB/DO-214AA • For surface m ounted applications • Low profile package • Built-in strain relief • Easy pick and place • U ltrafast recovery tim es fo r high efficiency


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    DO-214AA EIA-481) 315-\a PDF

    Untitled

    Abstract: No abstract text available
    Text: 1995 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25ns sTrr =s70ns TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAX. REVERSE CURRENT AT PIV MAX. PEAK FWD. VOLTAGE (PULSED) PEAK1 CY SURGE


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    s70ns) 1N5807 1N5809 1N5811 1N6626 1N6627 1N6628 1N6629 1N6630 1N6631 PDF

    pcb warpage spec

    Abstract: No abstract text available
    Text: 1 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. D IST REVISIONS £5 J LTR DESCRIPTION G3 REDRAWN W/CHANGE E C R - 0 7 - 0 17829 DATE DWN APVD 31A U G 07 TS KB - 31 - >±i£ :


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    B1115 31MAR2000 pcb warpage spec PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    SEN-5050

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SEN-5050 CUSTOMER: BAE SYSTEMS - NASHUA, NH PART NUMBER SEN-5050, REV. ENG. B HERMETIC POWER MOSFET N-CHANNEL - Screened to S-100 Level procedure attached - PIND Testing per MIL-STD-750, Method 2052 DESCRIPTION: A 100 VOLT, 0.035 OHM MOSFET IN A HERMETIC TO-254 PACKAGE.


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    SEN-5050, SEN-5050 S-100 MIL-STD-750, O-254 --SHD225512, MIL-STD-750 SEN-5050 PDF

    s812

    Abstract: SS12 THRU S100 SS13 SS14 SS15 SS16
    Text: SS12 THRU S100 SU RFACE MOUNT SCH O TTKY BARRIER RECTIFIER V O LTA G E - 20 TO 100 Volts CURRENT * 1.0 Ampere _ FEATURES_ • P la stic p a cka ge has U nderw riters Laboratory Flam m ability C la ssifica tio n 9 4 V -0 • For su rface m ounted ap plication s


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    DO-214AC MIL-STD-750, s812 SS12 THRU S100 SS13 SS14 SS15 SS16 PDF