XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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g2il
Abstract: SOT886F1 rfid "write sensitivity" SL3S1203 uhf rfid nxp schematic diagram of active rfid tag C source code EPCglobal SOT886.t1.t4 UCODE CRC16
Text: SL3S1203_1213 UCODE G2iL and G2iL+ Rev. 3.3 — 31 January 2011 198733 Product short data sheet PUBLIC 1. General description NXP’s UCODE G2iL series transponder ICs offer leading-edge read range and support industry-first features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, and
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SL3S1203
g2il
SOT886F1
rfid "write sensitivity"
uhf rfid nxp
schematic diagram of active rfid tag
C source code EPCglobal
SOT886.t1.t4
UCODE
CRC16
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Untitled
Abstract: No abstract text available
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
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SOT886F1
Abstract: SL3S1203 RFID tag eeprom SOT886.t1.t4 UHF RFID passive tag CMOS chip antenna rfid UHF j237 passive EAS rfid tags download rfid "write sensitivity" UCODE
Text: SL3S1203_1213 UCODE G2iL and G2iL+ Rev. 3.2 — 9 November 2010 198732 Product short data sheet PUBLIC 1. General description NXP’s UCODE G2iL series transponder ICs offer leading-edge read range and support industry-first features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, and
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SL3S1203
SOT886F1
RFID tag eeprom
SOT886.t1.t4
UHF RFID passive tag CMOS
chip antenna rfid UHF
j237
passive EAS rfid tags download
rfid "write sensitivity"
UCODE
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BF1108_BF1108R
Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Text: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
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BF1108;
BF1108R
OT143B
BF1108)
OT143R
BF1108R)
BF1108
BF1108R
BF1108_BF1108R
BF1108_1108R_3
MARKING CODE CGK
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BFU725F
Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F
OT343F
JESD625-A
BFU725F
germanium transistors NPN
DRO lnb
ka-band mixer
Germanium diode data sheet
germanium npn
nxp power microwave transistor
RF Transistor reference
Germanium power
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BFU725F
Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F
OT343F
JESD625-A
BFU725F
germanium rf transistor
code marking s20 TRANSISTOR
germanium transistor
germanium transistors NPN
SOT343F
germanium transistor npn
LNB ka band
Germanium power
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BF1118
Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
BF1118
BF1118R
DIODE marking S4 06
MARKING CODE CGK
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BFU610F
Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU610F
OT343F
BFU610F
SOT343F
germanium rf transistor
germanium power devices corporation
Mifare PLUS X
Germanium power
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BF1118
Abstract: MARKING CODE CGK
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
BF1118
MARKING CODE CGK
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Untitled
Abstract: No abstract text available
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
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DRO lnb
Abstract: JESD625-A BFU630 BFU630F
Text: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
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BFU630F
OT343F
JESD625-A
DRO lnb
BFU630
BFU630F
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Untitled
Abstract: No abstract text available
Text: SL2S1402; SL2S1502; SL2S1602 ICODE ILT Rev. 3.2 — 8 October 2013 234332 Product data sheet COMPANY PUBLIC 1. General description The ISO 18000-3 mode 3/EPC Class-1 HF standard allows the commercialized provision of mass adoption of HF RFID technology for passive smart tags and labels. Main fields of
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SL2S1402;
SL2S1502;
SL2S1602
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NXP date code marking
Abstract: marking nxp package SOD882D a/BAP1321LX
Text: 006 D-2 BAP1321LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP1321LX
OD882D
sym006
NXP date code marking
marking nxp package
SOD882D
a/BAP1321LX
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Untitled
Abstract: No abstract text available
Text: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled RF resistor for RF attenuators and switches
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BAP64LX
OD882D
sym006
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Untitled
Abstract: No abstract text available
Text: 006 D-2 BAP65LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP65LX
OD882D
sym006
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BAP1321LX
Abstract: No abstract text available
Text: BAP1321LX Silicon PIN diode Rev. 01 — 30 July 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ ■ High voltage, current controlled
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BAP1321LX
OD882T
sym006
BAP1321LX
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BAP65LX
Abstract: No abstract text available
Text: BAP65LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High voltage, current controlled Low diode capacitance
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BAP65LX
OD882T
sym006
BAP65LX
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transistor marking N1
Abstract: LNB ka band Germanium power
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F/N1
OT343F
JESD625-A
BFU725F
transistor marking N1
LNB ka band
Germanium power
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Untitled
Abstract: No abstract text available
Text: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 4 — 16 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled RF resistor for RF attenuators and switches
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BAP64LX
OD882D
sym006
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Untitled
Abstract: No abstract text available
Text: SL2S1412; SL2S1512; SL2S1612 ICODE ILT-M Rev. 3.2 — 8 October 2013 167732 Product data sheet COMPANY PUBLIC 1. General description The ISO 18000-3 mode 3/EPC Class-1 HF standard allows the commercialized provision of mass adoption of HF RFID technology for passive smart tags and labels. Main fields of
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SL2S1412;
SL2S1512;
SL2S1612
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BAP64LX
Abstract: No abstract text available
Text: BAP64LX Silicon PIN diode Rev. 01 — 29 June 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High voltage, current controlled RF resistor for RF attenuators and switches
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BAP64LX
OD882T
sym006
BAP64LX
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transistor smd yw
Abstract: BAP70AM array marking 20 NXP
Text: BAP70AM Silicon PIN diode array Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features • ■ ■ ■ High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
BAP70AM
transistor smd yw
array marking 20 NXP
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