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    NX6350EP Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    NX6350EP29-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application Visit Renesas Electronics Corporation
    NX6350EP27-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application Visit Renesas Electronics Corporation
    NX6350EP31-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application Visit Renesas Electronics Corporation
    NX6350EP33-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application Visit Renesas Electronics Corporation

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    LR4 optical

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NX6350EP Series LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION R08DS0066EJ0100 Rev.1.00 Aug 14, 2012 DESCRIPTION The NX6350EP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with


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    PDF NX6350EP 40GBASE-LR4 R08DS0066EJ0100 40GBASE-LR4 10G-Ethernet) LR4 optical