Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1823 Features High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE sat . High emitter-base voltage VEBO. Low noise voltage NV. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25
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2SD1823
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2SA1531A
Abstract: No abstract text available
Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SA1531A Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -55
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2SA1531A
2SA1531A
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MARKING SR
Abstract: ss smd 2SC3929 smd marking gv
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar 2SC3929 Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V
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2SC3929
MARKING SR
ss smd
2SC3929
smd marking gv
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1821A Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 185 V Collector-emitter voltage
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2SD1821A
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marking tr
Abstract: 2SC3929A
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar 2SC3929A Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 55
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2SC3929A
marking tr
2SC3929A
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1821 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
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2SD1821
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2SD1821
Abstract: No abstract text available
Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1821 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
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2SD1821
2SD1821
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2SD1821A
Abstract: 100Ku smd marking gv
Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1821A Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 185 V Collector-emitter voltage
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2SD1821A
2SD1821A
100Ku
smd marking gv
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2SB1220
Abstract: No abstract text available
Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1220 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -150 V Collector-emitter voltage
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2SB1220
2SB1220
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VEBO-15V
Abstract: vebo 2SD1823
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1823 Features High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE sat . High emitter-base voltage VEBO. Low noise voltage NV. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25
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2SD1823
VEBO-15V
vebo
2SD1823
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2SC2406
Abstract: hFE CLASSIFICATION Marking
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2406 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 Low noise voltage NV. +0.1 1.3-0.1
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2SC2406
OT-23
2SC2406
hFE CLASSIFICATION Marking
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2Fs SMD
Abstract: 2SB792 2SB792A smd marking gv
Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB792,2SB792A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low noise voltage NV 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1
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2SB792
2SB792A
OT-23
2SB792
2Fs SMD
2SB792A
smd marking gv
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2SD814
Abstract: 2SD814A marking LQ
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1
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2SD814
2SD814A
OT-23
2SD814
2SD814A
marking LQ
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2SA1035
Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SA1035 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise voltage NV. 0.4 3 Features 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 High forward current transfer ratio hFE.
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2SA1035
OT-23
2SA1035
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MARKING SR
Abstract: SS SMD MARKING SOT23 2SC2405 hFE CLASSIFICATION Marking
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2405 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1
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2SC2405
OT-23
MARKING SR
SS SMD MARKING SOT23
2SC2405
hFE CLASSIFICATION Marking
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COIL metal detector schematic
Abstract: SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04
Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V
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STEVAL-IFS004V1
TDE0160
TDE0160,
COIL metal detector schematic
SMD HF transistor
transistor smd CF rs
smd transistor NF
NV SMD TRANSISTOR
B82462-4683K
TDE0160
TDE0160FP
electronic schematic
SMD TRANSISTOR ALL 04
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Untitled
Abstract: No abstract text available
Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V
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STEVAL-IFS004V1
TDE0160
TDE0160,
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NV SMD TRANSISTOR
Abstract: multi sound buzzers multi tone buzzers SMA-17LC multi frequency multi sound buzzers SMD BUZZER SMA-17LT SMA17 P7 transistor BUZZER PCB
Text: nv/sa Excellence in physical acoustics Sint-Niklaas – Belgium SMA-17 + LC & LT version Multi-Application buzzer Pagina 1 van 3 The Sonitron Multi-Application buzzers are low cost commercial grade components for large volume applications. The SMA series are
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SMA-17
NV SMD TRANSISTOR
multi sound buzzers
multi tone buzzers
SMA-17LC
multi frequency multi sound buzzers
SMD BUZZER
SMA-17LT
SMA17
P7 transistor
BUZZER PCB
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SMA-13LT
Abstract: smd transistor 1g SMA-13LC SMA-13-LC-S Sonitron sma-13 smd transistor .1G sma 13-s NV SMD TRANSISTOR sma-13 sma 13lc-s
Text: nv/sa Excellence in physical acoustics Sint-Niklaas – Belgium SMA-13 + LC & LT version Multi-Application buzzer Pagina 1 van 3 The Sonitron Multi-Application buzzers are low cost commercial grade components for large volume applications. The SMA series
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SMA-13
SMA-13LT
smd transistor 1g
SMA-13LC
SMA-13-LC-S
Sonitron sma-13
smd transistor .1G
sma 13-s
NV SMD TRANSISTOR
sma-13
sma 13lc-s
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NV SMD TRANSISTOR
Abstract: 2SK2112 SOT-89 2SK2112 MOSFET marking smd marking nv
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2112 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 RDS on =1.2 MAX.@VGS=4.0V,ID=0.5A High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1
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2SK2112
OT-89
NV SMD TRANSISTOR
2SK2112 SOT-89
2SK2112
MOSFET marking smd
marking nv
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smd transistor p17
Abstract: transistor SMD p17 transistor P17 SMA-21-P15 Sonitron sma-21LV SMA-21S SMA-21LV p15 transistor Sonitron sma sma-21
Text: nv/sa Excellence in physical acoustics Sint-Niklaas – Belgium SMA 21 LC + LT + LV version Multi-Application buzzer Pagina 1 van 3 The Sonitron Multi-Application buzzers are low cost commercial grade components for large volume applications. The SMA series are designed
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SMA-21LC
SMA-21LV
smd transistor p17
transistor SMD p17
transistor P17
SMA-21-P15
Sonitron sma-21LV
SMA-21S
p15 transistor
Sonitron sma
sma-21
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st smd diode marking code
Abstract: smd diode order marking code stmicroelectronics TRANSISTOR SMD MARKING CODES ESCC 5204/002 smd transistor A1 2N5153HR marking SMD CODES NV SMD TRANSISTOR smd code book B3 transistor smd marking codes list
Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 3 1 TO-257 TO-39 2 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified
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2N5153HR
O-257
2N5153HR
O-257
st smd diode marking code
smd diode order marking code stmicroelectronics
TRANSISTOR SMD MARKING CODES
ESCC 5204/002
smd transistor A1
marking SMD CODES
NV SMD TRANSISTOR
smd code book B3 transistor
smd marking codes list
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD601A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Mini type package, allowing downsizing of the equipment and 1 0.55 Low collector to emitter saturation voltage VCE sat . +0.1 1.3-0.1 +0.1 2.4-0.1
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2SD601A
OT-23
100kW,
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2SD601A SMD
Abstract: zr smd 2SD601A
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planer Type 2SD601A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 0.55 Low collector to emitter saturation voltage VCE sat .
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2SD601A
OT-23
100kW,
2SD601A SMD
zr smd
2SD601A
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