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    NPN TRIPLE DIFFUSED TRANSISTOR 500V 8A Search Results

    NPN TRIPLE DIFFUSED TRANSISTOR 500V 8A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRIPLE DIFFUSED TRANSISTOR 500V 8A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1546B NPN Triple Diffused Planar Silicon Transistor 2SC3448 500V/4A Switching Regulator Applications Applications Package Dimensions • Switching regulator. unit:mm 2022A Features [2SC3448] · High breakdown voltage and high reliability.


    Original     		PDF ENN1546B 2SC3448 00V/4A 2SC3448]

    2sc3088

    Abstract: No abstract text available
    Text: Ordering number:ENN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3088] 15.6


    Original     		PDF ENN1017B 2SC3088 00V/4A VCBO800V) 2SC3088] PW300 Cycle10% 2sc3088

    2SC3088

    Abstract: ITR05333 ITR05334 ITR05335 ITR05336 ITR05337 npn triple diffused transistor 500v 8a
    Text: Ordering number:EN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3088] 15.6 14.0


    Original     		PDF EN1017B 2SC3088 00V/4A VCBO800V) 2SC3088] 2SC3088 ITR05333 ITR05334 ITR05335 ITR05336 ITR05337 npn triple diffused transistor 500v 8a

    ITR07019

    Abstract: 2SC4457 ITR07017 ITR07018 ITR07020 vbe 10v, vce 500v NPN Transistor
    Text: Ordering number:ENN3328 NPN Triple Diffused Planar Silicon Transistor 2SC4457 500V/4A Switching Regulator Applications Package Dimensions unit:mm 2039D [2SC4457] 16.0 3.4 5.6 22.0 5.0 8.0 3.1 2.0 21.0 • High breakdown voltage, high reliability. · High-speed switching.


    Original     		PDF ENN3328 2SC4457 00V/4A 2039D 2SC4457] ITR07019 2SC4457 ITR07017 ITR07018 ITR07020 vbe 10v, vce 500v NPN Transistor

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    LCD TV SMPS circuit

    Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
    Text: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient


    Original     		PDF O-263 FDZ2551N/FDZ2552P/FDZ2553N/FDZ2554P FDS6572A/FDS6574A Power247TM, LCD TV SMPS circuit MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50

    vbe 10v, vce 500v NPN Transistor

    Abstract: 2SC4298 npn triple diffused transistor 500v 8a
    Text: 2SC4298 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C)


    Original     		PDF 2SC4298 100max 400min Pulse30) 10typ 85typ FM100 vbe 10v, vce 500v NPN Transistor 2SC4298 npn triple diffused transistor 500v 8a

    npn high voltage transistor 500v 8a

    Abstract: 2SC4139 si50
    Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj


    Original     		PDF 2SC4139 MT-100 100max 400min 10typ 85typ Pulse30) npn high voltage transistor 500v 8a 2SC4139 si50

    2SC4139

    Abstract: npn triple diffused transistor 500v 8a
    Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj


    Original     		PDF 2SC4139 MT-100 100max 400min 10typ 85typ Pulse30) 2SC4139 npn triple diffused transistor 500v 8a

    2SC4434

    Abstract: npn triple diffused transistor 500v 8a
    Text: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A


    Original     		PDF 2SC4434 MT-100 100max 400min Pulse30) 10typ 135typ 2SC4434 npn triple diffused transistor 500v 8a

    2SC4434

    Abstract: npn triple diffused transistor 500v 8a npn high voltage transistor 500v 8a
    Text: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A


    Original     		PDF 2SC4434 MT-100 100max 400min Pulse30) 10typ 135typ 2SC4434 npn triple diffused transistor 500v 8a npn high voltage transistor 500v 8a

    600V igbt dc to dc buck converter

    Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
    Text: Highly Integrated Off-Line Power Switch 1 The FS6X1220RT Fairchild Power Switch FPS is a highly integrated offline power switch for DC/DC forward or fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (200V minimum


    Original     		PDF FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 Power247TM, 600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent

    2SC4298

    Abstract: npn triple diffused transistor 500v 8a
    Text: 2SC4298 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C)


    Original     		PDF 2SC4298 100max 400min Pulse30) 10typ 85typ FM100 2SC4298 npn triple diffused transistor 500v 8a

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL55B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85


    Original     		PDF BUL55B

    BUL65B

    Abstract: npn triple diffused transistor 500v 8a
    Text: SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2.18 0.086 2.44 (0.096) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051)


    Original     		PDF BUL65B BUL65B npn triple diffused transistor 500v 8a

    IR502

    Abstract: No abstract text available
    Text: Ordering number: EN 1012A NO.1012A ¡I _ 2SC3089 NPN Triple Diffused Planar Silicon Transistor SA iYO 500V/7A Switching Regulator Applications Features . High breakdown voltage VQBQ^800V . Fast switching speed. . Wide ¿SO. Absolute MaxiBua Ratings at Ta=25


    OCR Scan     		PDF 2SC3089 00V/7A 300ps, Cycled10? 2SC3089 005D05Q Vcc-20V IR502

    3330 transistor

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5090 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High Collector-Base Voltage ( V C b o = 1 500V) • High Speed Switching (tf = 0.1 uS) ABSOLUTE MAXIMUM RATINGS Symbol Characteristic


    OCR Scan     		PDF KSD5090 3330 transistor

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 938B 2SC3042 i SANYO NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications Features . High breakdown voltage VCBQ=500V . Fast switching speed. . Wide ASO. Absolute Maxiaua Ratings at Ta=25°C Collector-to-Base Voltage


    OCR Scan     		PDF 2SC3042 00V/12A PWS300ps, Cycled10? 4147KI/3095MW T707t 005003b

    npn triple diffused transistor 500v 8a

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5090 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High Collector-Base Voltage (V c b o = 1 500V) • High Speed Switching (tf=0.1/jS) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating


    OCR Scan     		PDF KSD5090 500/uH npn triple diffused transistor 500v 8a

    938B

    Abstract: 2SC3042 2SC304 N0938
    Text: Ordering number: EN 938B SÆVVO 1 f _ 2SC3042 N0.938B NPN Triple Diffused Planar Silicon Transistor F o r Sw i t c h i n g Re g u l a t o r s Features . High breakdown voltage VCBQ=500V . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25°C


    OCR Scan     		PDF 2SC3042 938B 2SC3042 2SC304 N0938

    2SC3040

    Abstract: 777T
    Text: Ordering number: EN 997B I SAIÌYO i 2SC3040 N0.997B NPN Triple Diffused Planar Silicon Transistor F or S w i t c h i n g Re g u l a t o r s Features . High breakdown voltage VQgQ^500V . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25°C


    OCR Scan     		PDF 2SC3040 PVK300ps, 2SC3040 777T

    2SC3040

    Abstract: No abstract text available
    Text: Ordering number: EN 997B _ 2SC3040 NPN Triple Diffused Planar Silicon Transistor 400V/8A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute M a x i m a Ratings at T a = 2 5C


    OCR Scan     		PDF 2SC3040 00V/8A PW1300 Cycled10? 100ms 2SC3040

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = INI BUL55B SEME LAB MECHANICAL DATA Dimensions in mm f* 10.2 -►, 4.5 f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL55B T0220

    npn triple diffused transistor 500v 8a

    Abstract: No abstract text available
    Text: Mil =X= mi SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE


    OCR Scan     		PDF BUL65B T0251) npn triple diffused transistor 500v 8a