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    NPN TRANSISTOR MARKING EY Search Results

    NPN TRANSISTOR MARKING EY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR MARKING EY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor ey

    Abstract: sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES KTC3265 Pb z High DC current gain: hFE:100-320 z Low saturation voltage. z Suitable for driver stage of small motor. z Complementary to KTC1298. z Small package.


    Original     		PDF KTC3265 KTC1298. OT-23 BL/SSSTC109 transistor ey sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    ktc32

    Abstract: sot-23 EY EY transistor
    Text: KTC3265 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High DC current gain: hFE=100-320 Complementary to KTA1298 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF KTC3265 OT-23 OT-23 KTA1298 100mA 500mA, 100MHz ktc32 sot-23 EY EY transistor

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    CPH3114

    Abstract: CPH3214 CPH5522
    Text: CPH5522 Ordering number : ENA0326 SANYO Semiconductors DATA SHEET CPH5522 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers, flash, MOSFET gate drive. Features •


    Original     		PDF CPH5522 ENA0326 CPH5522 CPH3114 CPH3214, A0326-5/5 CPH3214

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage


    Original     		PDF OT-23 KTC3265 OT-23 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4374 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 400 mA ICM: Collector-base voltage


    Original     		PDF OT-89 KTC4374 OT-89 200mA 200mA,

    KTC4374

    Abstract: EY sot-89 Transistor Marking EY npn transistor Marking EY
    Text: KTC4374 KTC4374 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 400 mA Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF KTC4374 OT-89 200mA 200mA, KTC4374 EY sot-89 Transistor Marking EY npn transistor Marking EY

    Untitled

    Abstract: No abstract text available
    Text: JJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4374 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L KTC4374 200mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain: hFE=100-320 Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 KTC3265 OT-23 KTA1298 100mA 500mA, 100MHz

    KTA1298

    Abstract: KTC3265 EY transistor Transistor Marking EY npn transistor Marking EY
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 KTC3265 OT-23 KTA1298 100mA 500mA, 100MHz KTA1298 KTC3265 EY transistor Transistor Marking EY npn transistor Marking EY

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT—23 ） TRANSISTOR（ NPN 1. BASE 2. EMITTER FEATURES 1.0 3. COLLECTOR ∙ High DC current gain: hFE=100-320 2.4 1.3 0.95 0.4 0.95 1.9 2.9 ∙ Complementary to kta1298 Unit : mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-23 KTC3265 kta1298 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N7370 Available on commercial versions NPN Darlington High Power Silicon Transistor Qualified per MIL-PRF-19500/624 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high power NPN transistor is rated at 12 amps and is military qualified up to the JANTXV


    Original     		PDF 2N7370 MIL-PRF-19500/624 O-254AA MIL-PRF-19500/624. T4-LDS-0208,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT—23 ） TRANSISTOR（ NPN 1. BASE 2. EMITTER FEATURES 1.0 3. COLLECTOR ∙ High DC current gain: hFE=100-320 2.4 1.3 0.95 0.4 0.95 1.9 2.9 ∙ Complementary to kta1298


    Original     		PDF OT-23 KTC3265 kta1298 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4374 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Low Collector- Emitter Saturation Voltage 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L 2SC4374 200mA 200mA

    vtc 365

    Abstract: MAX3286 MAX3287 MAX3289 MAX3296 MAX3299 vmd 185 020 at
    Text: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.


    Original     		PDF 25Gbps/2 MAX3286CTI+ MAX3286CGI MAX3286CHJ G2855-1 T2855-7 MAX3286/MAX3296 vtc 365 MAX3286 MAX3287 MAX3289 MAX3296 MAX3299 vmd 185 020 at

    MAX3286

    Abstract: MAX3287 MAX3289 MAX3296 MAX3299
    Text: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.


    Original     		PDF 25Gbps/2 MAX3286CTI+ MAX3286CGI MAX3286CHJ G2855-1 T2855-7 MAX3286/MAX3296 MAX3286 MAX3287 MAX3289 MAX3296 MAX3299

    2SD2402

    Abstract: transistor 2sD2402 Transistor Marking EY
    Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


    Original     		PDF 2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY

    vmd 185 020 at

    Abstract: MAX3286CTI T
    Text: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.


    Original     		PDF 25Gbps/2 MAX3286/MAX3296 780nm 850nm) 1300nm) H32-2F* 21-0110B MAX3286C vmd 185 020 at MAX3286CTI T

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    Transistor L83

    Abstract: N03C
    Text: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE FA1A3Q MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistors Built-in TYPE 2.8 ± 0.2 B 1.5 O— V W Ri -Hc[ R l = 1.0 k i2 R2 = 10 k£2


    OCR Scan     		PDF 10-Ir TC-2119 1987M Transistor L83 N03C

    2SA1344

    Abstract: H7q7 2sc339 2SC3398 s2e transistor
    Text: SANYO SEMICONDUCTOR CORP 5SE D0Q73SÔ D 2SA1344. 2SC3398 b • T - 3 7 - 13 T - 3S-I\ PNP/NPN Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances Rl=10ki2, R2=10kil 1236C Application! • Switching circuit, inverter circuit, interface circuit, driver circuit.


    OCR Scan     		PDF 2SA1344, 2SC3398 D0Q73SÃ T-37- T-35-H 1236C 10ki2, 10kfi, 10kii) 2SA1344 2SA1344 H7q7 2sc339 2SC3398 s2e transistor

    L4Z marking

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR ' FA1L4Z ‘Æ à i f ' MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE D IM E N SIO N S • in millimeters Resistor Built-in TYPE 2.8+0.2 o—V A — 1.5 Rl • Ri = 4 7 k fì Complementary to F N 1L4Z


    OCR Scan     		PDF TC-2117 1987M L4Z marking