NPN TRANSISTOR GAIN 20 CURRENT 200MA Search Results

NPN TRANSISTOR GAIN 20 CURRENT 200MA Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

NPN TRANSISTOR GAIN 20 CURRENT 200MA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3055A Abstract: Vce(sat) MJ2955A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A	Original	2N3055A MJ2955A 2N3055A Vce(sat) MJ2955A	PDF
2N3055 power amplifier circuit Abstract: 2N3055 isc 2n3055 transistor transistor 2N3055 Power Transistor 2N3055 2N3055 specification 2N3055 transistor equivalent 2N3055 NPN Transistor 2N3055 transistor 2N3055 power circuit Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055 DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955	Original	2N3055 MJ2955 2N3055 power amplifier circuit 2N3055 isc 2n3055 transistor transistor 2N3055 Power Transistor 2N3055 2N3055 specification 2N3055 transistor equivalent 2N3055 NPN Transistor 2N3055 transistor 2N3055 power circuit	PDF
2N3055H Abstract: Vce(sat) transistor Ic 4A NPN transistor 2N3055H Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055H DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier	Original	2N3055H 2N3055H Vce(sat) transistor Ic 4A NPN transistor 2N3055H	PDF
transistor tl 430 c Abstract: No abstract text available Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =	Original	BDY46 transistor tl 430 c	PDF
Untitled Abstract: No abstract text available Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY55 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage:VCE(sa,)=1.1 V(Max)@l c = 4A	Original	BDY55 10MHz	PDF
Untitled Abstract: No abstract text available Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY56 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage: VCE<sat)= 1.1 V(Max)@ lc = 4A	Original	BDY56 10MHz	PDF
Untitled Abstract: No abstract text available Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 BDY47 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 350V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max)@ lc = 15A	Original	BDY47	PDF
transistor MJE3055T Abstract: transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055T DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 60V(Min) ·High DC Current Gain: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching	Original	MJE3055T MJE2955T 500kHz transistor MJE3055T transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955	PDF
BDY73 Abstract: No abstract text available Text: J.E11EU LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDY73 DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE=50-150@lc = 4A • Collector-Emitter Saturation Voltage: VCE(sa.)= 11 V(Max)@ lc = 4A	Original	E11EU BDY73 100mA BDY73	PDF
nte278 Abstract: No abstract text available Text: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:	Original	NTE278 NTE278 200mA. 200MHz 1200MHz 216MHz	PDF
nte278 Abstract: No abstract text available Text: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:	Original	NTE278 200mA. 200MHz 1200MHz 360mA, 216MHz	PDF
J5200 Abstract: 2sc5200 amplifier J5200-R 2SC5200 FJP5200RTU FJP5200OTU 2Sc5200 TRANSISTOR FJP1943 FJP5200 FJPF5200 Text: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 15A. High Power Dissipation : 80watts. High Frequency : 30MHz.	Original	FJP5200 80watts. 30MHz. FJP1943 2SC5200/FJL4315 2SC5242/FJA4313 O220F FJPF5200 O-220 FJP5200 J5200 2sc5200 amplifier J5200-R 2SC5200 FJP5200RTU FJP5200OTU 2Sc5200 TRANSISTOR FJP1943 FJPF5200	PDF
2sc5200 amplifier Abstract: J5200 2sc5200 amplifier circuit 2SC5200 TRANSISTOR FJP5200RTU spice model 2SC5200 J5200-R 2sc5200 amplifiers audio output TRANSISTOR NPN DATA SHEET TRANSISTOR 2SC5200 Text: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 17A. High Power Dissipation : 80watts. High Frequency : 30MHz.	Original	FJP5200 80watts. 30MHz. FJP1943 2SC5200/FJL4315 2SC5242/FJA4313 O220F FJPF5200 O-220 FJP5200 2sc5200 amplifier J5200 2sc5200 amplifier circuit 2SC5200 TRANSISTOR FJP5200RTU spice model 2SC5200 J5200-R 2sc5200 amplifiers audio output TRANSISTOR NPN DATA SHEET TRANSISTOR 2SC5200	PDF
j4315 Abstract: No abstract text available Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.	Original	2SC5200/FJL4315 150watts. 30MHz. to2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315	PDF

j4313-o Abstract: No abstract text available Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A High Power Dissipation : 130watts High Frequency : 30MHz.	Original	2SC5242/FJA4313 130watts 30MHz. to2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F FJPF5200 j4313-o	PDF
tip29 equivalent Abstract: tip30c TIP29 TIP29A TIP29C TIP30A 9016 pnp transistor Power Bipolar Transistor Text: TIP29, 30 High Power Bipolar Transistor Features: • Collector-Emitter sustaining voltageVCEO sus = 60V (Minimum) - TIP29A, TIP30A = 100V (Minimum) - TIP29C, TIP30C. • Collector-Emitter saturation voltageVCE(sat) = 0.7V (Maximum) at IC = 1.0A. • Current gain-bandwidth product fT = 3.0MHz (Minimum) at IC = 200mA.	Original	TIP29, TIP29A, TIP30A TIP29C, TIP30C. 200mA. TIP30C TIP29A TIP29C tip29 equivalent tip30c TIP29 TIP29A TIP29C TIP30A 9016 pnp transistor Power Bipolar Transistor	PDF
2sc5200 Spice Models Abstract: j5200 2sc5200 J5200-R Text: FJPF5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 50watts. High Frequency : 30MHz.	Original	FJPF5200 50watts. 30MHz. FJPF1943 2SC5200/FJL4315 2SC5242/FJA4313 FJP5200 O-220F BVC2008 2sc5200 Spice Models j5200 2sc5200 J5200-R	PDF
Untitled Abstract: No abstract text available Text: FJPF5200 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A. High Power Dissipation :50watts. High Frequency : 30MHz.	Original	FJPF5200 50watts. 30MHz. toFJPF1943 2SC5200/FJL4315 2SC5242/FJA4313 FJP5200 O-220F FJPF5200	PDF
j4315 Abstract: C5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 J4315O 2sc5200 Spice Models 2sc5200 spice 2sc5200 2sc5200 transistor 2sc5200 amplifier Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz.	Original	2SC5200/FJL4315 150watts. 30MHz. 2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315 C5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 J4315O 2sc5200 Spice Models 2sc5200 spice 2sc5200 2sc5200 transistor 2sc5200 amplifier	PDF
j4315 Abstract: c5200 2sc5200 amplifier circuit J4315O 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sc5200 Spice Models 2sc5200 amplifier 2sc5200 transistor 2sc5200 amplifiers Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.	Original	2SC5200/FJL4315 150watts. 30MHz. 2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315 c5200 2sc5200 amplifier circuit J4315O 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sc5200 Spice Models 2sc5200 amplifier 2sc5200 transistor 2sc5200 amplifiers	PDF
2sc5200 amplifier Abstract: 2sc5200 amplifier circuit J5200 fjA4313 2SC5200 fjpf5200 2sc5200 amplifiers FJP5200 FJPF1943 FJPF5200OTU Text: FJPF5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A. High Power Dissipation : 50watts. High Frequency : 30MHz.	Original	FJPF5200 50watts. 30MHz. FJPF1943 2SC5200/FJL4315 2SC5242/FJA4313 FJP5200 O-220F FJPF5200 2sc5200 amplifier 2sc5200 amplifier circuit J5200 fjA4313 2SC5200 2sc5200 amplifiers FJP5200 FJPF1943 FJPF5200OTU	PDF
j4313-o Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.	Original	2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F FJPF5200 j4313-o NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU	PDF
J201 N-channel JFET to 90 Abstract: diode ZENER A8 npn no switch spice bare die zener dual gate n-channel mosfet transistor N-Channel JFET switch Text: SST823 SST824 HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems FEATURES HIGH SWITCHING SPEED tON = 2.0ns LOW ON RESISTANCE rDS ON = 5Ω LOW GATE NODE CAPACITANCE C = 25pF LOW GATE LEAKAGE CAPACITANCE IG(ON) = 0.05µA ABSOLUTE MAXIMUM RATINGS1	Original	SST823 SST824 SST824 200mA J201 N-channel JFET to 90 diode ZENER A8 npn no switch spice bare die zener dual gate n-channel mosfet transistor N-Channel JFET switch	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base	Original	2SC4467 2SC4467 2SC4467L-x-T3P-T 2SC4467G-x-T3P-T 2SC4467L-x-T3N-T 2SC4467G-x-T3N-T QW-R214-018	PDF

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NPN TRANSISTOR GAIN 20 CURRENT 200MA Search Results

NPN TRANSISTOR GAIN 20 CURRENT 200MA Result Highlights (5)

NPN TRANSISTOR GAIN 20 CURRENT 200MA Datasheets Context Search

2N3055A

2N3055 power amplifier circuit

2N3055H

transistor tl 430 c

Untitled

Untitled

Untitled

transistor MJE3055T

BDY73

nte278

nte278

J5200

2sc5200 amplifier

j4315

j4313-o

tip29 equivalent

2sc5200 Spice Models

Untitled

j4315

j4315

2sc5200 amplifier

j4313-o

J201 N-channel JFET to 90

Untitled