MJE521
Abstract: MJE371
Text: ON Semiconductor MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers
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MJE521
MJE371
r14525
MJE521/D
MJE521
MJE371
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mje521 npn
Abstract: No abstract text available
Text: ON Semiconductor MJE521 Plastic Medium−Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers
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MJE521
MJE371
mje521 npn
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MJE371
Abstract: MJE521
Text: ON Semiconductort MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers
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MJE521/D
r14525
MJE371
MJE521
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Untitled
Abstract: No abstract text available
Text: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Die Outline MP4T80100 Features • • • MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT 6GHz Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when
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MP4T80100
MP4T80100
300mA
MP4T801
MP4T80100)
200mil
MP4T801510)
MP4T801510
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MP4T80100
Abstract: MP4T801 M-Pulse Microwave NPN transistor 5 watts chip die npn transistor
Text: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Features • • • MP4T80100 Die Outline MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT 6GHz Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when
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MP4T80100
MP4T80100
300mA
MP4T801
MP4T80100)
200mil
MP4T801510)
MP4T801510
M-Pulse Microwave
NPN transistor 5 watts
chip die npn transistor
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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MJE521
MJE371
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
mje521 equivalent
BU108
2N3055 plastic
2N6488 MOTOROLA
Motorola transistors MJE3055 TO 127
3904 Transistor
BDX54
tip122 tip127 audio amp
BU326
BU100
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MJE521
Abstract: Motorola design of audio amplifier MJE371 mje521 npn
Text: MOTOROLA Order this document by MJE521/D SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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MJE521/D*
MJE521/D
MJE521
Motorola design of audio amplifier
MJE371
mje521 npn
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MJ410
Abstract: NPN 200 VOLTS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor 400 volts.50 amperes
Text: MOTOROLA Order this document by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.
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MJ410/D*
MJ410/D
MJ410
NPN 200 VOLTS POWER TRANSISTOR
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
transistor 400 volts.50 amperes
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TIP36
Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —
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MJ410
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
TIP36
BD413
2SC331
BD139.6
BD139.10
BDW59
2sc2159
BD139.16
BD419
2SD364
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IC IL 117
Abstract: 2N5011 2N5339A transistor sit TRANSISTOR 800h 2N5010 2N5012 2N5013 2N5152 2N5154
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 IC/ VCE min/max @ A/V PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 [email protected]/10 2N5011 600h .5 2N5012 700h 2N5013 ¡¡I NPN TO-5
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O-39/TO-5
2N4150A
2N5010
2N5011
2N5012
2N5013
2N5152
2N5154
2N5237A
2N5238A
IC IL 117
2N5339A
transistor sit
TRANSISTOR 800h
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2N3440A
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 [email protected]/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) [email protected]/,02 5
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O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
2N3440A
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nec 2sd882
Abstract: 2sd882 nec 2SD882
Text: NPN SILICON POWER TRANSISTOR 2SD882 DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC con verter and relay driver. PACKAGE DIMENSIONS in millimeters inches 8 .5 M A X . ( 0 .3 3 4 M A X .)
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2SD882
Oi003
nec 2sd882
2sd882 nec
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339
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O-39/TO-5
2N1479
2N1480
2N1481
2N1482
2N1714
2N1717
2N3418
2N3419
2N3420
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2n5642
Abstract: 2N5642 motorola 2N5642 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •
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2N5642
2n5642
2N5642 motorola
2N5642 equivalent
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RF NPN POWER TRANSISTOR l band
Abstract: transistor su 312
Text: • 0 D1 7 5 4 4 sm ■ MITSUB.SH. RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on UHF band mobile radio applications.
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2SC1968
470MHz
470MHz.
GD1754b
2SC1968
RF NPN POWER TRANSISTOR l band
transistor su 312
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2628
2SC2628
175MHz
175MHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. 4 0±0 5 H
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2SC1967
2SC1967
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2SC2628
Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2628
2SC2628
175MHz
175MHz,
NPN EPITAXIAL PLANAR TYPE 175mhz 1w
18W 12 transistor
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MJ410
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.
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MJ410/D
MJ410
O-204AA
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MRF5175 transistor
Abstract: MRF5175 transistor 2sc 546
Text: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver
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MRF5175
28-Volt,
400-M
T-33-05
MRF5175 transistor
MRF5175
transistor 2sc 546
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2N5189
Abstract: MM5189 75 watt npn switching transistor
Text: M M 5 1 8 9 s i l i c o n NPN SILICON ANNULAR NPN SILICON HIGH CURRENT AMPLIFIER AND CORE DRIVER TRANSISTOR TRANSISTOR . . . designed for use in high-current, high speed switching, and core driver applications. • • Collector-Emitter Breakdown Voltage —
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MM5189
2N5189
300MS,
2N5189
MM5189
75 watt npn switching transistor
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 [email protected]/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b
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O-39/TO-5
2N4150A
2N5010
2N5011
2N5012
2N5013
2N5152
2N5154
2N5237A
2N5238A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • • • High Collector-Emitter Voltage —
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transistor Pout 5W
Abstract: No abstract text available
Text: ERICSSON ^ PTB 201 59 5 Watts, 900 MHz RF Power Transistor Preliminary Description Key Features The 20159 is NPN, common emitter RF Power Transistor intended for 24VDC operation across the 850-960 MHz frequency band. It is rated at 5 Watts minimum output power and may be used for
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24VDC
900MHz)
transistor Pout 5W
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