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    NPN TRANSISTOR 400V 10A HIGH SPEED SWITCHING Search Results

    NPN TRANSISTOR 400V 10A HIGH SPEED SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 400V 10A HIGH SPEED SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC4107

    Abstract: ITR06315 ITR06316 ITR06313 ITR06314
    Text: Ordering number:ENN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching . · Wide ASO. · Adoption of MBIT process.


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    ENN2472A 2SC4107 00V/10A 2010C 2SC4107] O-220AB 2SC4107 ITR06315 ITR06316 ITR06313 ITR06314 PDF

    EN1207

    Abstract: 2SC3277 EN1207A 2sc3277 transistor
    Text: Ordering number:EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high current. · Wide ASO. · Fast switching speed. unit:mm 2022A [2SC3277] 1 : Base


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    EN1207A 2SC3277 00V/10A 2SC3277] PW300 Cycle10% EN1207 2SC3277 EN1207A 2sc3277 transistor PDF

    2SC4107

    Abstract: No abstract text available
    Text: Ordering number:EN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.


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    EN2472A 2SC4107 00V/10A 2010C 2SC4107] O-220AB SC-46 2SC4107 PDF

    2SC4162

    Abstract: ITR06410 ITR06411 ITR06412 ITR06413
    Text: 2SC4162 Ordering number : EN2483D SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC4162 400V / 10A Switching Regulator Applications Features • • • • • High breakdown voltage, high reliability. High-speed switching tf : 0.1µs typ .


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    2SC4162 EN2483D 2SC4162 ITR06410 ITR06411 ITR06412 ITR06413 PDF

    2sc4162

    Abstract: No abstract text available
    Text: Ordering number:ENN2483A NPN Triple Diffused Planar Silicon Transistor 2SC4162 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · High-speed switching tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.


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    ENN2483A 2SC4162 00V/10A 2SC4162] 2sc4162 PDF

    Untitled

    Abstract: No abstract text available
    Text: , LJne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. M J13333 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) • High Switching Speed


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    J13333 COLLE00V PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2751 KSC2751 High Speed High Current Switching Industrial Use TO-3P 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V 400


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    KSC2751 PW300 Cycle10% KSC2751RTU PDF

    NPN Transistor 50A 400V

    Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
    Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly


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    NTE99 NTE99 NPN Transistor 50A 400V NPN 400V 40A npn darlington 400v 15a PDF

    NTE53

    Abstract: TRANSISTOR 450V 5A NPN 100W
    Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed power switching in inductive circuits where fall time is critical. This device is particularly suited for


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    NTE53 NTE53 TRANSISTOR 450V 5A NPN 100W PDF

    NTE53

    Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
    Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for


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    NTE53 NTE52 NTE53 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3 PDF

    400V switching transistor

    Abstract: npn darlington 400v 15a NPN Transistor 10A 400V NTE2315 Displays
    Text: NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast


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    NTE2315 NTE2315 400VC 500mA, 400V switching transistor npn darlington 400v 15a NPN Transistor 10A 400V Displays PDF

    NTE2319

    Abstract: No abstract text available
    Text: NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated


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    NTE2319 NTE2319 800ns PDF

    150w darlington transistor to3 package

    Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
    Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


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    NTE97 NTE97 150w darlington transistor to3 package NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV PDF

    NTE385

    Abstract: No abstract text available
    Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated


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    NTE385 NTE385 PDF

    NTE2538

    Abstract: No abstract text available
    Text: NTE2538 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


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    NTE2538 NTE2538 PDF

    2SC4162

    Abstract: 501 ic 10A Switching Regulator
    Text: Ordering num ber:EN 2483A | _ 2SC4162 NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator Applications Features . High breakdown voltage, high reliability • Fast switching speed tf=0.1ps typ . Wide ASO . Adoption of MBIT process


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    2SC4162 00V/10A 7TT707b D0S017M 002017S 501 ic 10A Switching Regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN 1207A 2SC3277 i NPN Triple Diffused Planar Silicon Transistor SM YO 400V/10A Switching Regulator Applications Features . High breakdown voltage, high current. . Wige ASO. . Fast switching speed. Absolute Maxima Ratings at Ta=25°C Collector-toBase Voltage


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    2SC3277 00V/10A 300us, DQ2D077 L-200M PDF

    2SC4107

    Abstract: No abstract text available
    Text: Ordering number : EN2472A 2SC4107 i NPN Triple Diffused Planar Silicon Transistor SANYO, 400V/10A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Hide ASO . Adoption of MBIT process Absolute Maxima Ratings at Ta=25 C


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    EN2472A 2SC4107 00V/10A 300ps HP777 0QSG15L. 2SC4107 PDF

    NPN Transistor 10A 400V

    Abstract: KSC2752 L 10mH TS 4142 KSC2751 400V 10A NPN transistor
    Text: ¡SAMSUNG SEMICONDUCTOR INC KSC2751 " 1«4E 0 | 7^^4145 0 0 0 7 5 7 b 0 | NPN EPITAXIAL SILICON TRANSISTOR " : ; rT~33 -is HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating ' Sym bol Collector-Base Voltage


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    000757b KSC2751 50LECTORfMtTTER 00Q7Sfll KSC2752 NPN Transistor 10A 400V L 10mH TS 4142 400V 10A NPN transistor PDF

    transistor lt 186

    Abstract: NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor
    Text: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 4 00 V Emitter- Base Voltage V ebo 7 V 15 A Symbol


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    KSC2751 transistor lt 186 NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2751 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cB O Sym bol 500 V C ollector- E m itter Voltage V cE O 400 V Em itter- Base Voltage V ebo


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    KSC2751 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo 7 V


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    KSC2751 300jis, PDF

    etd 41

    Abstract: 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 BUF41 NPN Transistor 10A 400V OA41
    Text: 7 q g q g 3 7 £ fl D o g a s i SGS-THOMSON i Li lf^(S llD(gi S A 3 BUF410/410I BUF410A/410AI S-THOMSON 3GE » FASTSWITCH EASY-TO-DRIVE (ETD) NPN TRANSISTORS PRELIMINARY DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTOR ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­


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    BUF410/41 BUF41 OA/41 100KHz 10OKHz BUF410/410I BUF410A/410AI etd 41 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 NPN Transistor 10A 400V OA41 PDF

    transistor lt 186

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2751 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE T O -3P ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector Current DC 'C o lle c to r Current (Pulse)


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    KSC2751 transistor lt 186 PDF