ZXTN19100CZ
Abstract: TS16949 ZXTN19100CZTA ZXTP19100CZ
Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19100CZ
ZXTP19100CZ
D-81541
ZXTN19100CZ
TS16949
ZXTN19100CZTA
ZXTP19100CZ
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Zetex ZXTP19100CZ
Abstract: No abstract text available
Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19100CZ
ZXTP19100CZ
D-81541
Zetex ZXTP19100CZ
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100C
Abstract: TS16949 ZXTN19100CG ZXTN19100CGTA ZXTP19100CG
Text: ZXTN19100CG 100V NPN low sat medium power transistor in SOT223 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.5A VCE(sat) < 65mV @ 1A RCE(sat) = 43mΩ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19100CG
OT223
ZXTP19100CG
OT223
D-81541
100C
TS16949
ZXTN19100CG
ZXTN19100CGTA
ZXTP19100CG
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Untitled
Abstract: No abstract text available
Text: ZXTN19100CG 100V NPN low sat medium power transistor in SOT223 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.5A VCE(sat) < 65mV @ 1A RCE(sat) = 43mΩ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19100CG
OT223
ZXTP19100CG
OT223
D-81541
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ZXTN19100CFF
Abstract: TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN
Text: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the
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ZXTN19100CFF
OT23F,
ZXTP19100CFF
OT23F
D-81541
ZXTN19100CFF
TS16949
ZXTN19100CFFTA
ZXTP19100CFF
ZXTN
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Untitled
Abstract: No abstract text available
Text: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the
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ZXTN19100CFF
OT23F,
ZXTP19100CFF
OT23F
D-81541
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Untitled
Abstract: No abstract text available
Text: 2SD2607 Transistors For Power amplification 100V, 8A 2SD2607 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) High hFE by darlington connection.
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2SD2607
O-220FN
2SB1668
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transistor D600k
Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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ENN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
transistor D600k
transistor d600
D600K
D600k transistor
transistor b631
b631k
b631 transistor
transistor B631K
k b631k
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2sb631 transistor
Abstract: transistor b631 transistor D600k 2sb631 2sd600
Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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ENN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
2sb631 transistor
transistor b631
transistor D600k
2sd600
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transistor D600k
Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
Text: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
transistor D600k
transistor d600
transistor b631
D600k transistor
transistor B631K
D600K
b631 transistor
B631K
D600
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ksd73
Abstract: npn power transistor 100v list
Text: KSD73 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY HIGH POWER AMPLIFIER TO-220 • Collector-Base Voltage: VCBO = 100V • Collector Current: IC = 5A • Collector Dissipation: PC = 30W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage
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KSD73
O-220
ksd73
npn power transistor 100v list
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity
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EN2511B
2SA1593/2SC4135
2SA1593/2SC4135-applied
2SA1593
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2510B 2SC4134 Bipolar Transistor http://onsemi.com 100V, 1A, Low VCE sat , NPN Single TP/TP-FA Applications • Power supplies, relay drivers, lamp drivers Features • • • • High breakdown voltage and large current capacity Adoption FBET, MBIT processes
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EN2510B
2SC4134
2SC4134-applied
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TS16949
Abstract: ZXTN25020DFL ZXTN25020DFLTA ZXTP25020DFL MARKING 1A1
Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 70mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain
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ZXTN25020DFL
350mW
ZXTP25020DFL
TS16949
ZXTN25020DFL
ZXTN25020DFLTA
ZXTP25020DFL
MARKING 1A1
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Untitled
Abstract: No abstract text available
Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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O-220
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Untitled
Abstract: No abstract text available
Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD73
O-220
/new/html/KSD73
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CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV
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O-92M
KRC102M
KRC112M
O-92L
KTN2369,
KTC3194
KTC3197,
KTC3198
KTC945B
KIA431
CHINA TV FBT
transistor 2N3906 smd 2A SOT23
TS4B05G
transistor 2N3904 smd 2A SOT23
fbt tv
KIA7812API
KIA431A transistor
transistor KIA431A
CHINA TV uoc
2N60 MOSFET SMPS
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transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
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LCD TV SMPS circuit
Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
Text: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient
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O-263
FDZ2551N/FDZ2552P/FDZ2553N/FDZ2554P
FDS6572A/FDS6574A
Power247TM,
LCD TV SMPS circuit
MOSFET 200v 20A n.channel
CY63413
laptop lcd inverter
Power line load switch for portable dvd china
NC7SV158
automatic WATER LEVEL pump CONTROL
mosfet triggering circuit for inverter
list of P channel power mosfet
FQPF18N50
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.
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MN2510
MN2510
MN2510L-x-T3P-T
MN2510G-x-T3P-T
QW-R214-020
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD USS5550 NPN SILICON TRANSISTOR NPN HIGH-VOLTAGE TRANSISTORS DESCRIPTION The UTC USS5550 is a NPN transistor which features low current and high voltage. It is generally suitable for switching and amplification in high voltage applications such as telephone.
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USS5550
USS5550
300mA
USS5550G-AB3-R
OT-89
QW-R208-046
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toshiba 2sd1407a
Abstract: 2SB1016A 2SD1407A
Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A
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2SD1407A
2SB1016A
toshiba 2sd1407a
2SB1016A
2SD1407A
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2SB1016A
Abstract: 2SD1407A
Text: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A
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2SD1407A
2SB1016A
2SB1016A
2SD1407A
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Untitled
Abstract: No abstract text available
Text: KSD73 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY HIGH POWER AMPLIFIER • Collector-Base Voltage: V C b o = 100V • Collector Current: lc = 5A • Collector Dissipation: Pc = 30W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic
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KSD73
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