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    NPN DARLINGTON TRANSISTOR ARRAY Search Results

    NPN DARLINGTON TRANSISTOR ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN DARLINGTON TRANSISTOR ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC-3479

    Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits


    Original     		PDF PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH

    PA1476

    Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1476 PA1476 PA1476H transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134

    ic 8705

    Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1436A PA1436A PA1436AH ic 8705 IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213

    DARLINGTON MANUAL

    Abstract: pa1436ah uPA1436H pa1436 iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1436 PA1436 PA1436H DARLINGTON MANUAL pa1436ah uPA1436H iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202

    IC-3523

    Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and


    Original     		PDF PA1458 PA1458 PA1458H IC-3523 IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array

    uPA1456H

    Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1456 PA1456 PA1456H uPA1456H IC-3521 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY

    IC-6634

    Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and


    Original     		PDF PA1478 PA1478 PA1478H IC-6634 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY

    uln2003r

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY  DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington transistor arrays. Each consists of seven NPN darlington pairs


    Original     		PDF ULN2003R ULN2003R 500mA. OP-16 QW-R113-013

    M54523

    Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 pnp 8 transistor array 18P4G 20P2N-A M54583 8 pin 4v power supply ic

    M54583FP

    Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54583P/FP 400mA M54583P M54583FP M54583P 400mA) pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 pnp 8 transistor array

    M54522

    Abstract: m54566 M54566WP
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566WP 400mA M54566WP 400mA) M54522 m54566

    8 pin 4v power supply ic

    Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic Seven Transistor Array PNP M54222 pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS

    M54522

    Abstract: M54566DP Seven Transistor Array PNP m54566
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated


    Original     		PDF M54566DP 400mA M54566DP 400mA) Jul-2011 M54522 Seven Transistor Array PNP m54566

    ULN2003 RELAY DRIVER

    Abstract: No abstract text available
    Text: ULN2003 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode


    Original     		PDF ULN2003 ULN2003 500mA. DIP-16 ULN2003 RELAY DRIVER

    8 pin 4v power supply ic

    Abstract: M54222 Seven Transistor Array PNP M54566FP pnp 8 transistor array M54566P transistor arrays 5v m54566 M5422 pnp darlington array
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic M54222 Seven Transistor Array PNP pnp 8 transistor array transistor arrays 5v m54566 M5422 pnp darlington array

    M54519P

    Abstract: M54519FP IC M54519P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current


    Original     		PDF M54519P/FP 400mA M54519P M54519FP 400mA) IC M54519P

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		PDF 500mA M54563WP 500mA) Jul-2011 Jun-2011

    pnp darlington array

    Abstract: PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A M54587FP
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54587P/FP 500mA M54587P M54587FP pnp darlington array PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A

    M54563WP

    Abstract: 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		PDF M54563WP 500mA M54563WP 500mA) Jul-2011 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		PDF 500mA M54562WP 500mA) Jul-2011

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M54561P 300mA M54561P 300mA)

    transistor CD 910

    Abstract: IEI-1213 MEI-1202 MF-1134 uPA1426 darlington transistor for audio power application npn darlington array EL120 EM202
    Text: SILICON TRANSISTOR ARRAY / P 1 A 4 2 6 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The,uPA1426 is NPN silicon epitaxial Darlington Power Transistor PACKAGE DIMENSION (in m illim eters) A rray that built in 4 circu its designed for driving solenoid,


    OCR Scan     		PDF uPA1426 PA1426H transistor CD 910 IEI-1213 MEI-1202 MF-1134 darlington transistor for audio power application npn darlington array EL120 EM202

    XR-2011

    Abstract: XR2011 XR2013CN XR2013 XR-2012
    Text: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic


    OCR Scan     		PDF XR-2011/12/13/14 XR-2011/2012/2013/2014 XR-1568M XR-1568/XR-1468C XR-1468/1568 XR-2011 XR2011 XR2013CN XR2013 XR-2012

    Untitled

    Abstract: No abstract text available
    Text: XR-2001 /2/3/A KSr EXAR High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION - W The XR-2001 /2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic


    OCR Scan     		PDF XR-2001 XR-1568M XR-1568/XR-1468C XR-1468/1568