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    NPN DARLINGTON 15A Search Results

    NPN DARLINGTON 15A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy

    NPN DARLINGTON 15A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Silicon NPN Darlington transistor

    Abstract: No abstract text available
    Text: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.


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    PDF NTE214 NTE214 500IB1 500IB2 Silicon NPN Darlington transistor

    DARLINGTON 3A 100V npn

    Abstract: hfe 2500 NTE264
    Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


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    PDF NTE263 NTE264 NTE263) NTE264) DARLINGTON 3A 100V npn hfe 2500 NTE264

    NTE2317

    Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


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    PDF NTE2317 NTE2317 150mA automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor

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    Abstract: No abstract text available
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


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    PDF NTE2317 NTE2317

    nte2317

    Abstract: automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


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    PDF NTE2317 NTE2317 150mA automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor

    NTE270

    Abstract: No abstract text available
    Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.


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    PDF NTE270 NTE271 NTE270

    automotive ignition

    Abstract: NTE2316 105w vce 500v NPN Transistor
    Text: NTE2316 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls.


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    PDF NTE2316 NTE2317 140mA, automotive ignition NTE2316 105w vce 500v NPN Transistor

    400V switching transistor

    Abstract: npn darlington 400v 15a NPN Transistor 10A 400V NTE2315 Displays
    Text: NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast


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    PDF NTE2315 NTE2315 400VC 500mA, 400V switching transistor npn darlington 400v 15a NPN Transistor 10A 400V Displays

    NPN Transistor 50A 400V

    Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
    Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly


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    PDF NTE99 NTE99 NPN Transistor 50A 400V NPN 400V 40A npn darlington 400v 15a

    Untitled

    Abstract: No abstract text available
    Text: 2N6576 2N6577 2N6578 SILICON NPN DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switching applications.


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    PDF 2N6576 2N6577 2N6578 2N6576, 2N6577, 2N6578 100mA

    pmd18k100

    Abstract: TO3 package NPN transistor collector base and emitter 100V 10-9The
    Text: SEME PMD18K100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 60A PEAK 240 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18K100 is an NPN Darlington


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    PDF PMD18K100 PMD18K100 100mA 300ms, TO3 package NPN transistor collector base and emitter 100V 10-9The

    Untitled

    Abstract: No abstract text available
    Text: S EM E PMD18K100 LA B NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 60A PEAK 240 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18K100 is an NPN Darlington


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    PDF PMD18K100 PMD18K100 100mA 300ms,

    NTE2344

    Abstract: nte2343 SILICON COMPLEMENTARY transistors darlington
    Text: NTE2343 NPN & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V


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    PDF NTE2343 NTE2344 100mA, NTE2344 nte2343 SILICON COMPLEMENTARY transistors darlington

    Untitled

    Abstract: No abstract text available
    Text: 2N6385SMD05 MECHANICAL DATA Dimensions in mm inches SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) • High Gain Darlington Performance 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225)


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    PDF 2N6385SMD05 SMD05 O-276AA)

    2SB887

    Abstract: 2SD1197 ITR08623 ITR08624
    Text: 2SB887 / 2SD1197 Ordering number : EN1079B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Darlington Transistor NPN Triple Diffused Planar Silicon Darlington Transistor 2SB887 / 2SD1197 Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.


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    PDF 2SB887 2SD1197 EN1079B 2SB887 2SD1197 ITR08623 ITR08624

    NTE2549

    Abstract: No abstract text available
    Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    PDF NTE2549 NTE2549

    NTE2550

    Abstract: NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor
    Text: NTE2550 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


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    PDF NTE2550 NTE2550 NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor

    TO276AA

    Abstract: SMD05 TO-276 diode of 5a 5v 10kHz
    Text: 2N6385SMD05 MECHANICAL DATA Dimensions in mm inches SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 FEATURES • High Gain Darlington Performance


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    PDF 2N6385SMD05 SMD05 O-276AA) TO276AA SMD05 TO-276 diode of 5a 5v 10kHz

    mj10021

    Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
    Text: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.


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    PDF MJ10021 mj10021 ob 2268 60 amp npn darlington power transistors MJ1002

    TD62064BF

    Abstract: TD62064BP-1 Stepping Motor Toshiba
    Text: TO SHIBA TD62064BP-1/BF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62064BP-1, TD62064BF 4ch HIGH-CURRENT DARLINGTON SINK DRIVER The TD62064BP-1 and TD62064BF are high-voltage, highcurrent darlington drivers comprised of four NPN darlington pairs.


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    PDF TD62064BP-1/BF TD62064BP-1, TD62064BF TD62064BP-1 TD62064BF DIP16 PFP16 TD62064BP-1 Stepping Motor Toshiba

    TD620648P-1

    Abstract: 62064BP 62064BP-I
    Text: SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62064BP-1 /BF 4ch HIGH-CURRENT DARLINGTON SINK DRIVER The TD620648P-1 and TD62064BF are high-voltage, highcurrent darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for switching


    OCR Scan
    PDF TD62064BP-1 TD620648P-1 TD62064BF DIP16 PFP16 62064BP-I HSOP16-P-300 TD62064BP-1/BF 62064BP 62064BP-I

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TD62064BP-1/BF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62064BP-1r TD62064BF 4ch HIGH-CURRENT DARLINGTON SINK DRIVER The TD62064BP-1 and TD62064BF are high-voltage, highcurrent darlington drivers comprised of four NPN darlington pairs.


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    PDF TD62064BP-1/BF TD62064BP-1r TD62064BF TD62064BP-1 TD62064BF PFP16 6-P-300-2

    TD62064

    Abstract: TD62064BF TD62064BP-1 TD6206
    Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62064BP-1, TD62064BF DATA SILICON MONOLITHIC 4ch HIGH-CURRENT DARLINGTON SINK DRIVER The TD62064BP-1 and TD62064BF are h igh-voltage, highcurrent darlington drivers comprised of four NPN


    OCR Scan
    PDF TD62064BP-1, TD62064BF TD62064BP-1 TD62064BF TD62064BP-1 DIP16 PFP16 TD62064 TD6206

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TD62064BP-1, TD62064BF DATA SILICON MONOLITHIC 4ch HIGH-CURRENT DARLINGTON SINK DRIVER The TD62064BP-1 and TD62064BF are high-voltage, highcurrent darlington drivers comprised of four NPN


    OCR Scan
    PDF TD62064BP-1, TD62064BF TD62064BP-1 TD62064BF TD62064BP-1 DIP16 PFP16 DIP16-P-300A