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    NPN 400W Search Results

    NPN 400W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 400W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking w4s

    Abstract: power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 Q62702-C2481 400w transistor TA-1004 "NPN Transistor"
    Text: BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    PDF 200mA Q62702-C2481 OT-343 Nov-27-1996 BCR400 marking w4s power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 400w transistor TA-1004 "NPN Transistor"

    IC 555

    Abstract: IC555 IC 555 as temperature controller ic 555 timer working IC 555 working 43K10 power dissipation fet 400W
    Text: BCR 400W Active Bias Controller 3 Characteristics 4 • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V 2 Application notes 1 • Stabilizing bias current of NPN transistors and


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    PDF 200mA VPS05605 EHA07188 OT-343 EHA07217 EHA07218 Feb-24-1999 EHA07219 EHA07191 IC 555 IC555 IC 555 as temperature controller ic 555 timer working IC 555 working 43K10 power dissipation fet 400W

    IC 555

    Abstract: IC555 726-BCR400WH6327 npn marking tx marking w4s NPN 400W marking transistor RF BCR400WH6327
    Text: BCR400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery 3 voltage and extreme ambient temperature variation 2 4 1 • Low voltage drop of 0.7V Application notes 4 • Stabilizing bias current of NPN transistors 3


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    PDF BCR400W 200mA EHA07188 OT343 726-BCR400WH6327 H6327 IC 555 IC555 npn marking tx marking w4s NPN 400W marking transistor RF BCR400WH6327

    GP 005

    Abstract: Load VSWR tolerance PHA3135-130M VCC36
    Text: Radar Pulsed Power Module, 115, 130, 145W, 100µs Pulse 3.1 - 3.5 GHz PHA3135-130M V4.00 Features ● ● ● ● ● NPN Silicon Power Transistor Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined for High Power Transmitters Plated Copper Flange


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    PDF PHA3135-130M GP 005 Load VSWR tolerance PHA3135-130M VCC36

    diode z104

    Abstract: EN50081 z104 Common collector configuration active and passive electronic components electromagnetic relay industrial relay datasheets overvoltage protections application note relay 112 relay reed
    Text: CONVERTERS AND INTERFACES Z-LINE Z-104 Pulses converters Z-LINE DC Current / Voltage Frequency converter ► INPUT: current 0.20, 4 . 20 mA voltage 0.5, 1.5, 0.10, 2.10 Vdc ► OUTPUT: on npn open-collector 30 Vdc 300 mA; reed relay 30 Vdc/sc 100 mA ► ACCURACY: 0,2%


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    PDF Z-104 EN50081-2 EN50082-2 EN61010-1 diode z104 EN50081 z104 Common collector configuration active and passive electronic components electromagnetic relay industrial relay datasheets overvoltage protections application note relay 112 relay reed

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


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    PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    ANA 618

    Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE
    Text: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003  General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D ANA 618 voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE

    CS5170

    Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
    Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL CS5170 MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    12V to 220V smps inverter

    Abstract: PNP 2A DPAK 927 mps9418 VN2406LZL1 tl494cn inverter mc34167t LM324N-B DC 48v AC 220v 500w smps 1500w PWM 220v 220v DC motor speed control mcr72
    Text: SGD501/D REV 9, April 6, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: APRIL 6, 2002  General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D 12V to 220V smps inverter PNP 2A DPAK 927 mps9418 VN2406LZL1 tl494cn inverter mc34167t LM324N-B DC 48v AC 220v 500w smps 1500w PWM 220v 220v DC motor speed control mcr72

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


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    PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    diac kr 206

    Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
    Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com


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    PDF element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE

    A1000-REV00k9040-IE

    Abstract: AX-REM01K9050-IE A1000-REV00k6050-IE a1000-fia3071-re A1000FIA3105RE A1000-FIV3005-RE AX-FIM1024-RE
    Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3  ";CI?A;A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99


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    MARKING CODE R7 RF TRANSISTOR

    Abstract: transistor B 764 NPN transistor marking W4s marking transistor RF
    Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    PDF 200mA Q62702-C2481 OT-343 BCR400 MARKING CODE R7 RF TRANSISTOR transistor B 764 NPN transistor marking W4s marking transistor RF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    PDF 200mA Q62702-C2481 OT-343 E35b05 012Gflb3 BCR400 flE35bQ5 012Dflb4 EHA07219

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    PDF 200mA Q62702-C2481 BCR400W OT-343 Ufl235b05 BCR400 EHAD7217 3235b05 EHA07219 0235tiGS

    Untitled

    Abstract: No abstract text available
    Text: “BIG IDEAS IN BIG POWER " PowerTecn • 400 AMPERES PT-9503 SILICON NPN TRANSISTOR FEATURES: V v C E sat . V Be - 1.5 V @ 200 A @ 200 A h p jz 5 min t f . @ 400A 3 p sec PD . 625 Watts ES/b 6 Joules SAFE OPERATING AREA


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    PDF PT-9503 100KHZ

    amplifier siemens sot-363

    Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343
    Text: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code


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    PDF OT-343 OT-143 fl235b05 amplifier siemens sot-363 BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343

    powertech

    Abstract: PT-9503 PT95U
    Text: 7a=îâ7t.M □□□□313 a 17 E D •I BIG IDEAS IN BIG POWER" BBB ^ ■ PowerTech POUERTECH INC 400 AMPERES " T -* 5 3 -iS F T -9 5 0 3 SILICON NPN TRANSISTOR FEATURES: V @ 200 A 1.5 V @200 A v CE sat VBE hpg 5 min t f . @400A 3 p sec


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    PDF PT-95Ã 10-32X PB-500 18WIRE 200mA, 100KHZ 100KHZ powertech PT-9503 PT95U

    Untitled

    Abstract: No abstract text available
    Text: jtà i W a n A M P <c o m p a n y Radar Pulsed Power Module, 115,130,145W, 1OOjis Pulse 3.1 - 3.5 GHz PHA3135-130M V4.00 Features • • • • • NPN Silicon Pow er Transistor Input a n d O u tp u t M atched to 500 D uroid Circuit B oard Easily C om bined for High P ow er Transm itters


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    PDF PHA3135-130M

    Untitled

    Abstract: No abstract text available
    Text: yMÄcüM M an AMP com pany Radar Pulsed Power Module, 115,130,145W, 100|xs Pulse 3.1-3.5 GHz PHA3135-130M Features • NPN Silicon P o w e r T ran sisto r • In p u t an d O u tp u t M atched to 50H • D u ro id Circuit B o ard • Easily C o m b in ed for H igh P o w e r T ransm itters


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    PDF PHA3135-130M

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2T908A

    Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
    Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,


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    PDF T-0574D. 30Eiaa Coi03nojiH 2T908A 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117