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    NPN 2SC372 Search Results

    NPN 2SC372 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 2SC372 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3725

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3725 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters


    Original     		PDF 2SC3725 2SC3725

    2SC3723

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3723 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters


    Original     		PDF 2SC3723 O-220C 2SC3723

    2SC3725

    Abstract: ultrasonic IC
    Text: Inchange Semiconductor Product Specification 2SC3725 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters


    Original     		PDF 2SC3725 2SC3725 ultrasonic IC

    2SC3723

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3723 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters


    Original     		PDF 2SC3723 O-220C 2SC3723

    2SC3725

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3725 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers


    Original     		PDF 2SC3725 2SC3725

    2SC3723

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3723 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers


    Original     		PDF 2SC3723 O-220C 2SC3723

    Untitled

    Abstract: No abstract text available
    Text: Product Specification 2SC3720 Silicon NPN Power Transistor DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection


    Original     		PDF 2SC3720

    Untitled

    Abstract: No abstract text available
    Text: 2SC3725 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SC3725

    2SC2240BL

    Abstract: KT630A BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389
    Text: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P


    Original     		PDF BFY41 BFR21 KT630A BF156 SE7002 BSY79 2S0668 -2S0669 2SCB17 2SC2240BL BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389

    2N1375

    Abstract: 2n1310 2N1389 2N1410 2N1416 2SC1940 Motorola 2N1363 sot-23 TAW texas 2N1307 2N1377
    Text: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P


    Original     		PDF BFY41 BFR21 KT630A BF156 SE7002 BSY79 2S0668 -2S0669 2SCB17 2N1375 2n1310 2N1389 2N1410 2N1416 2SC1940 Motorola 2N1363 sot-23 TAW texas 2N1307 2N1377

    BC547BP

    Abstract: BC147B tbc547b BC407A BC407B 2SC372GT BC547AP BC850BR BC550BP TBC547
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 >= BC407A BC547A BC547AP BC847AR TBC547A BCW47B BC147B BC147B BC147B BC407B 20 BC547BP BC550BP BC847BR BC847BR BC847BR BC850BR BC850BR BC850BR Phi~sElec ITT emilntr AmperexElec ~g~:~ 25 30 ~mperext;lec


    Original     		PDF BC407A BC547A BC547AP BC847AR TBC547A BCW47B BC147B BC407B BC547BP tbc547b BC407B 2SC372GT BC850BR BC550BP TBC547

    2sc945l

    Abstract: NEC 2SC945 SOT-23 2SC2785H 2SC372G-TM-Y 2SC372GTM-Y 2SC2785F A9 SOT-23 2SC945Q 2SC3622AL 2SC2785K
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 .65 70 200M 200M 200M 200M 200M 200M 200M 200M 200M 200M ~anyo ~Iect 2SC3331T 2SC3330U 2SC3331U 2SC2320L 2SC3330V 2SC3689 2SC3820 2SC3615M 2SC3615L Sanyo Elect Sanyo Elect Sanyo Elect


    Original     		PDF 2SC3330R 2SC3331R 2SC372G BCY86 2SC3330S 2SC3331S 2SC2320 2S0874A 2S0973A 2SC733G 2sc945l NEC 2SC945 SOT-23 2SC2785H 2SC372G-TM-Y 2SC372GTM-Y 2SC2785F A9 SOT-23 2SC945Q 2SC3622AL 2SC2785K

    transistor 2sc124

    Abstract: transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 HN / BC 548 / 9014 2SC166 HN / BC 548 / 9014 2SC376 HN / BC 546 / 9014 2SC15-1 HN / BC 546 / 9014


    Original     		PDF To-92 2SC15-0 2SC166 2SC376 2SC15-1 2SC167 2SC400 2SC16 2SC182 2SC401 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor

    2SC372Y

    Abstract: 2N5027 2SC372-Y 2SC1335 2SC1766C G50N50 NPN 2sc372 2N1410A 2N1410 2SC306
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133


    Original     		PDF 2SC1766A 2SC1766B 2SC1766C 2SC1766D MM1941 MPS6512 MPS6513 TP5377 TP5376 HSE144 2SC372Y 2N5027 2SC372-Y 2SC1335 G50N50 NPN 2sc372 2N1410A 2N1410 2SC306

    3722K

    Abstract: No abstract text available
    Text: K "7 > y $ / T ransistors 2SC3722K 2SC 3722K I k°$ * '> 5 K NPN BW EßH /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor h y 1 ¡ s w a t 5* 2) * V c i eo = 1 2 0V ) •(N F=0.2dB Typ.) 1.9 C.950.95 3) 2SA1455K


    OCR Scan     		PDF 2SC3722K 3722K 2SA1455K 2SA1455K. 2SC3722K Fig12 3722K

    ET-191

    Abstract: No abstract text available
    Text: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*


    OCR Scan     		PDF 2SD921 2SC2929 2SC3549 2SC3551 2SD1157 2SC3550 ET383 2SD834 2SD1073 ET393 ET-191

    diode marking YG

    Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.


    OCR Scan     		PDF 2SC3728 2SC3728 150to800 500mW 100mA -10mA diode marking YG MITSUBISHI LOT NO transistor cr marking

    2sc4977

    Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
    Text: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549


    OCR Scan     		PDF 2SC3550 2SD921 2SC3551 ET383 2SC3505 2SC4419 2SC2656 2SC3030 ET190 2SD923 2sc4977 transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391

    2SC3722

    Abstract: No abstract text available
    Text: h "7 > v 7»$ /Transistors • m W m Epitaxial Planar NPN Silicon Transistor S W S ftS a & fiS i^ fillg ffl/H ig h Voltage Low Freq. Low Noise Amp. • • & £ 1 a 2SC3722K I H E Dimensions Unit : mm) - (V ce o = 120V) 2) f i 3 8 ^ T '* - 5 : (N F =0.2dB Typ.)


    OCR Scan     		PDF 2SC3722K 2SA1455K. 100kQ 2SC3722K 2SC3722

    2SA1455K

    Abstract: 2SC3722K T146 T147 VCEO120V
    Text: S "7 > y 7, $ / ’Transistors W W W 2SC3722K # E pitaxial P lanar NPN S ilico n T ransistor iS W f f f ie ^ « a i^ i i« f f l/ H ig h V oltage Low Freq. Low N oise Am p. • £W2-+5£|§|/Dimensions Unit: mm 1 ) * » E T '* 5 : (VC e o = 1 2 0 V ) 2) 1BM&T& * : (NF=0.2dB Typ.)


    OCR Scan     		PDF 2SC3722K 2SA1455K 2SA1455K. SC-59 01KK-3- 2SC3722K T146 T147 VCEO120V

    2SC3033

    Abstract: Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191
    Text: COLL MER SEMICONDUCTOR INC MAE D • 22367=12 OüDlSflQ SOI « C O L Switching Iftmsistors/MQV's ^ g SWITCHING TRANSISTORS TO-220AB TO-220F kcont. V c e o s u s Volts Pc Device type Amps. Max. Min. Watts NPN 3 400 600 60 40 2SC2929 2SC3549 4 250 60 2SD1073


    OCR Scan     		PDF O-220AB 2SC2929 2SC3549 2SD1073 2SB862* 2SD1128 2SD930 2SD2767 2SD834 2SD982 2SC3033 Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191

    2SC2550

    Abstract: 2SA1090 2SC400 2SC970 2sa467 2SC1380A 2SC372 NPN 2sc372 2SC395A 2SC979A
    Text: Powered by ICminer.com 7. INDUSTRIAL APPLICATIONS TO-92 -3 o to X H 00 > Electronic-Library Type No. Application NPN I PNP v CE0 •c PC V (mA) (mW) hFE Vqe (V) fT TYP. v CE(sat) M A X - 'c 'C 'b (mA) (mA) (V) (mA) Cob TYP. SW Time TYP. V CB tstg tf 'o (V)


    OCR Scan     		PDF 2SA1090 2SC395A 2SC400 2SC970 2SC1380A 2SC2550 2SC979A 2SA1090 2sa467 2SC372 NPN 2sc372 2SC979A

    2sc4977

    Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
    Text: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS


    OCR Scan     		PDF 2SC2929 2SC3549 2SD1157 2SD834 2SD1073 2SB862* 2SD1128 2SD982 2SC2767 2SD1072 2sc4977 transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor

    2SC367

    Abstract: 2SC372
    Text: 7. INDUSTRIAL APPLICATIONS TO-92 —3 O IX X H CD >• hFE Type No. Application NPN | PNP f T TYP. v CE sat) M A X - VCEO >C PC V CE •c (V) (mA) (mW) (V) (mA) (V) <C ■b (mA) (mA) (MHz) Cob TYP. V qe >c f=1MHz (V) (mA) (pF) SW Time TYP. VCB (V) ton tstg


    OCR Scan     		PDF 2SC367 2SC509 2SA500 2SC970 2SC1380A 2SC2550 12SA1090 2SC979A 2SC372