NPN 10 A 50 V GERMANIUM Search Results

NPN 10 A 50 V GERMANIUM Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
CS60-010S	Coilcraft Inc	Current Sense Transformer, 10A

NPN 10 A 50 V GERMANIUM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFU725F Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Untitled Abstract: No abstract text available Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU760F OT343F JESD625-A
transistor marking N1 Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
BFU760F Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU760F OT343F JESD625-A BFU760F bfu760 dielectric resonator oscillator germanium transistor table Germanium power
BFU610F Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU610F OT343F BFU610F SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
BFU725F Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power
BFU790F Abstract: JESD625-A Germanium power Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU790F OT343F JESD625-A BFU790F Germanium power
germanium transistor ac 125 Abstract: No abstract text available Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU730F OT343F JESD625-A germanium transistor ac 125
marking s20 SMD Transistor Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power Text: 62 7 & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.	Original	PDF	BFU730LX OT883C JESD625-A marking s20 SMD Transistor sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
BFU730F Abstract: JESD625-A 555 ic Germanium power Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU730F OT343F JESD625-A BFU730F 555 ic Germanium power
JESD625-A Abstract: BFU710F DRO lnb Germanium power Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU710F OT343F JESD625-A BFU710F DRO lnb Germanium power
Untitled Abstract: No abstract text available Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU710F OT343F JESD625-A
transistor marking N1 Abstract: LNB ka band Germanium power Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band Germanium power
2.4 ghz transistor wifi amplifier Abstract: Germanium power 160 germanium transistor wifi lna Ghz dB transistor Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.1 — 16 November 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power 160 germanium transistor wifi lna Ghz dB transistor

npn 10 a 50 v to-3 germanium Abstract: TO10 package germanium transistors NPN AD163 2N1041 AUY26 npn 10 a 50 v germanium 2n1040 germanium 2SB449 Text: POWER GERMANIUM TRANSISTORS Item Number «C Part Number Manufacturer Type Max V BR CEO (A) (V) Po Max h re fT ICBO Max k)N Max ON) Min (HZ) (A) (s) r (CE)ut T Oper Max (Ohms) Max (°C) 250m 250m 230m 160m 470m 500m 250m 250m 250m 750m 10 10 10 750m 10 10 10	Original	PDF	2N2554 2N2558 2N1756 2N1760 2N3160 2N3156 2N1039 2N2555 2N2559 CK258 npn 10 a 50 v to-3 germanium TO10 package germanium transistors NPN AD163 2N1041 AUY26 npn 10 a 50 v germanium 2n1040 germanium 2SB449
Germanium Transistor Abstract: Germanium power ON5088,115 Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	ON5088 OT343F JESD625-A Germanium Transistor Germanium power ON5088,115
Germanium power Abstract: No abstract text available Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	ON5088 OT343F JESD625-A Germanium power
ON5088 Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	PDF	ON5088 OT343F JESD625-A ON5088 germanium NPN germanium transistors NPN SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power
2N439 Abstract: No abstract text available Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N439 - 2N439A NPN HIGH FREQUENCY COMPUTER TRANSISTORS 2N439 and 2N439A are NPN alloy-junction germanium transistors. Their basic NPN nature (high mobility electron flow) renders	Original	PDF	2N439 2N439A 2N439A 2N439Ahas
2m137 Abstract: 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A Text: IN TEX/ SEMITRONICS CORP E 7E D • 4fibei a 4fa GGOQETe T -Z 7 -O I 1 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ; Trinsittdt: Polarity ■mm.-: im* i Maximum Miximum V Typical Giln HFE Power (W) VCB	OCR Scan	PDF	ci24t N1086 J2N1087 2N169 S50I6Ã 2m137 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A
2N19A Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924 Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^	OCR Scan	PDF	2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924
2N1305 Abstract: J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2N1308 2n1308 jan transistor 2N1309 Text: M IL -S -1 9500/126C 24 March 1971 SUPERSEDING M IL -S-195 0 0 /1 26B 20 March 1904 * MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, GERMANIUM, HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306, 2N1308 AND PNP TYPES 2N1303, 2N1305, 2N1307, 2N1309 This sp ecification is mandatory for u se by a ll D epart	OCR Scan	PDF	MIL-S-19500/126C MIL-S-19500/126B 2N1302, 2N1304, 2N1306, 2N1308 2N1303, 2N1305, 2N1307, 2N1309 2N1305 J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2n1308 jan transistor 2N1309
germanium transistors NPN Abstract: 2n1549 2N627 2N456A 2n1162 2N1560 germanium 2N458A 2n1291 2N1295 Text: germanium power transistors PNP TO-3 cont’d Type# = 3 to 25A Iife @ Ic / V c E NPN Comple VcEO(SUS) V ebo (Volts) (Volts) ment (Min-Max @ A/V) VcE(SAT) @ Ic/ I b Pd @ = 25°C Û JC (Watts) (°C/W) (V @ A/A) V be @ Ic/V cE (V @ A/V) (mA @ 1.5@5/1.5 1.5@5/1.5	OCR Scan	PDF	2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2NX021A 2N1022A 2N1218 2N1292 germanium transistors NPN 2n1549 2N627 2n1162 2N1560 germanium 2n1291 2N1295
germanium transistors NPN Abstract: npn germanium germanium af transistors AC127 germanium transistor transistor germanium germanium germanium npn transistor 127 na Germanium Transistors Text: NPN Germanium Transistors // fT <VCE “ o C om m on Characteristics < NPN G erm anium A F A llo y transistors in T 0 1 m etal case Cob V Cß = 6 V , l e = 0 1m A) 70 pF I 1 M Hz , M a xim um ratings C haracteristics @ T am^-= 25 °C p TOT 1 o -I Í Type	OCR Scan	PDF

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NPN 10 A 50 V GERMANIUM Search Results

NPN 10 A 50 V GERMANIUM Result Highlights (5)

NPN 10 A 50 V GERMANIUM Datasheets Context Search

BFU725F

Untitled

transistor marking N1

BFU760F

BFU610F

BFU725F

BFU790F

germanium transistor ac 125

marking s20 SMD Transistor

BFU730F

JESD625-A

Untitled

transistor marking N1

2.4 ghz transistor wifi amplifier

npn 10 a 50 v to-3 germanium

Germanium Transistor

Germanium power

ON5088

2N439

2m137

2N19A

2N1305

germanium transistors NPN

germanium transistors NPN