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    Part ECAD Model Manufacturer Description Download Buy
    NP36N055HHE-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation

    NP36N055HHE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NP36N055HHE NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF

    NP36N055HHE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D-101-00

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252


    Original     		NP36N055HHE, NP36N055IHE NP36N055HHE O-251 O-252 O-251) D-101-00 PDF

    NP36N055HHE

    Abstract: NP36N055IHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252


    Original     		NP36N055HHE, NP36N055IHE NP36N055HHE O-251 O-252 O-251) NP36N055HHE NP36N055IHE PDF

    NP36N055HHE

    Abstract: NP36N055IHE
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP36N055HHE,NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION


    Original     		NP36N055HHE NP36N055IHE NP36N055HHE O-251 O-252 NP36N055IHE PDF

    NP36N055HHE

    Abstract: NP36N055IHE
    Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		NP36N055HHE, NP36N055IHE O-251 NP36N055HHE O-252 NP36N055HHE NP36N055IHE PDF

    NP36N055SHE

    Abstract: NP36N055HHE NP36N055IHE d14152ej4v0ds
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE, NP36N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.


    Original     		NP36N055HHE, NP36N055IHE, NP36N055SHE NP36N055HHE NP36N055IHE O-251 O-252 O-251) NP36N055SHE NP36N055HHE NP36N055IHE d14152ej4v0ds PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252


    Original     		NP36N055HHE, NP36N055IHE NP36N055HHE O-251 O-252 O-251) PDF

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


    Original     		G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP PDF

    NP36N055SHE

    Abstract: mp-3zk NP36N055HHE NP36N055IHE
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NP36N055SHE

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original     		SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919 PDF

    2sk4145

    Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
    Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)


    Original     		SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080 PDF

    PA1900TE

    Abstract: 2sk3326 PA1770 d1340 2SK3298 UMOS-2
    Text: PowerMOSFET by NEC: Well-built . Even the most brillant It’s the same in real life. intelligence needs a little muscle to put the ideas into practice. Conversely, sheer brute force won’t get you anywhere without some Let’s face it, brain or brainpower behind it.


    Original     		E-28007 I-20124 I-00139 GB-MK14 D13405EE3V0PF00 PA1900TE 2sk3326 PA1770 d1340 2SK3298 UMOS-2 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    TO-252 MOSFET p channel

    Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
    Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering


    Original     		NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS109V30 TO-252 MOSFET p channel NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE PDF

    TO-263 footprint

    Abstract: UMOS-4 NP90N04MUG NP82N055MHE NP60N04KUG NP22N055SLE NP32N055SDE NP32N055SLE NP34N055SHE NP36N055SHE
    Text: NP-Series • • • • • • AEC-Q101 compliant Super high current capability Tj,max = 175°C Avalanche energy rated TO-220, TO-252 and TO-263 package RoHS compliant + + + new P-Channel products + + + NP-series – our hotheads can take the heat NEC Electronic’s PowerMOSFET NP-series


    Original     		AEC-Q101 O-220, O-252 O-263 D17430EE2V0PF00 TO-263 footprint UMOS-4 NP90N04MUG NP82N055MHE NP60N04KUG NP22N055SLE NP32N055SDE NP32N055SLE NP34N055SHE NP36N055SHE PDF

    NP75P04

    Abstract: NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG
    Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 m W • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:


    Original     		AEC-Q101 D17430EE5V0PF00 NP75P04 NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG PDF

    SC-95

    Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
    Text: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original     		MP-10, SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) O-252Z, O-252ZK, O-263ZJ, O-263ZK, SC-95 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 PDF

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


    Original     		D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 PDF

    TO-252 MOSFET p channel

    Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
    Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive


    Original     		Q3/2001 NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS071V50 TO-252 MOSFET p channel nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE PDF