Untitled
Abstract: No abstract text available
Text: DNA3865-01 Diodes RF Noise Generator Diode Semiconductor MaterialSilicon Package StyleMicro-I Mounting StyleS Description100MHz to 18GHz;30dB typical noise ratio;800mW max power consumption
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DNA3865-01
Description100MHz
18GHz
800mW
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white noise Generator 1GHz
Abstract: Zener Diode White noise noise diode generator white noise generator Zener Diode frequency reverse-biased zener diode conclusion of zener diode voltage ZENER diode TESTING CIRCUIT 1n749 ZENER DIODE an3469
Text: Maxim > App Notes > Signal Generation Circuits Keywords: white noise, avalanche breakdown, zener diode, low-noise amplifier, LNA Mar 14, 2005 APPLICATION NOTE 3469 Building a Low-Cost White-Noise Generator Abstract: A design idea for a white-noise generator is realized and revised. Two low-noise amplifiers LNAs in
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com/an3469
MAX2650:
AN3469,
APP3469,
Appnote3469,
white noise Generator 1GHz
Zener Diode White noise
noise diode generator
white noise generator
Zener Diode frequency
reverse-biased zener diode
conclusion of zener diode voltage
ZENER diode TESTING CIRCUIT
1n749 ZENER DIODE
an3469
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Untitled
Abstract: No abstract text available
Text: CND3002A Diodes RF Noise Generator Diode Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT DescriptionMin Noise Out 500uV RMS;Freq 100MHz to 200MHz;Vz 8.0V +/-20%;Iz 5.0mA typ;Pd 400mWmax
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CND3002A
500uV
100MHz
200MHz
400mWmax
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Untitled
Abstract: No abstract text available
Text: CND3002 Diodes RF Noise Generator Diode Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT DescriptionRandom/White;Freq. 100MHz to 200MHz;Vz 7V+/-10%;Iz 10mA;Po from 100MHz to 200MHz.
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CND3002
100MHz
200MHz
200MHz.
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SM3 DIODE
Abstract: NC202 noise source diode
Text: Return to Noise Source Index SM-SERIES MINI-NOISE DIODES 10 KHZ TO 100 MHZ DESCRIPTION Micronetics’ SM-Series Diode with its small, surface mount SOT-23 package is ideally suited for medium and high
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OT-23
SM3 DIODE
NC202
noise source diode
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AN1639
Abstract: MICROWAVE ASSOCIATES Delta Microwave HP141T LM317 diode ring mixer phase detector 60 hz dc oscillator circuit
Text: Order this document by AN1639/D AN1639 Phase Noise Measurement Using the Phase Lock Technique Prepared by: Morris Smith INTRODUCTION This application note explains the phase locked loop PLL method of phase noise measurement. The PLL method shown in Figure 1 uses a diode ring mixer, OP–AMP based
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AN1639/D
AN1639
AN1639
MICROWAVE ASSOCIATES
Delta Microwave
HP141T
LM317
diode ring mixer phase detector
60 hz dc oscillator circuit
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Micronetics
Abstract: noise source diode
Text: SM-1 MINI-NOISE DIODES 10 KHZ TO 100 MHZ DESCRIPTION Micronetics’ SM-1 Diode with its small, surface mount SOT-23 package is ideally suited for medium and high volume production circuits. The random highly stable noise characteristic makes it ideal for several applications from encryption, to A/D dithering.
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OT-23
Micronetics
noise source diode
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LTC1429
Abstract: LTC1340 LTC1261 LTC1340CMS8 LTC1340CS8 LTC1550 LTC1551
Text: LTC1340 Low Noise, Voltage-Boosted Varactor Driver U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1340 is a varactor diode driver designed to generate 5V varactor drive from a single 3V or higher voltage supply. It includes a low noise amplifier with an internal gain of 2.3
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LTC1340
LTC1340
LTC13
152mm)
254mm)
LTC1261,
LTC1429,
LTC1550,
LTC1551
434-0507q
LTC1429
LTC1261
LTC1340CMS8
LTC1340CS8
LTC1550
LTC1551
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Untitled
Abstract: No abstract text available
Text: DEMO MANUAL DC2120A LT3048-15 Low Noise Bias Generator Description Demonstration circuit 2120A features the LT3048-15, a Boost DC/DC Converter with integrated Schottky diode and LDO in a 2mm x 2mm DFN package. This demo board is designed to convert a 2.7V to 4.8V input to a 15V output
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DC2120A
LT3048-15
LT3048-15,
LT3048-15
LT3048.
LT3048
DC2120A
dc2120af
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AIC2351
Abstract: AIC2351GV5 GN15G GN33G 2351G 1. EN 2. GND 3. VOUT 4. VIN 5. FB SOT-23-5 AIC2351-33GV5TR AIC2351GV5TR l22f AIC235
Text: AIC2351 Low-Noise Synchronous PWM/PFM Step-Down DC/DC Converter FEATURES DESCRIPTION 2.5V to 5.5V Input Voltage Range 600mA Guaranteed Output Current 95% Efficiency No Schottky Diode Required 30µA Low Quiescent Current 100% Duty Cycle in Low Dropout Operation
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AIC2351
600mA
AIC2351
AIC2351GV5
GN15G
GN33G
2351G
1. EN 2. GND 3. VOUT 4. VIN 5. FB SOT-23-5
AIC2351-33GV5TR
AIC2351GV5TR
l22f
AIC235
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D07 15
Abstract: d04 15 testing of diode d07-15 diode Switching diode 0.5 SN74S1056 SN74S1056A
Text: SN74S1056A 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019A – D3492, APRIL 1990–REVISED MARCH 1992 • • • SC PACKAGE Designed to Reduce Reflection Noise T0P VIEW Repetitive Peak Forward Current . . . 200 mA D01 D02 D03 D04 GND GND D05
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SN74S1056A
SDLS019A
D3492,
SN74S1056A
16ocal
D07 15
d04 15
testing of diode
d07-15 diode
Switching diode 0.5
SN74S1056
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SN74S1056A
Abstract: SN74S1056
Text: SN74S1056A 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019A – APRIL 1990 – REVISED MARCH 1992 D D D Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 200 mA 8-Bit Array Structure Suited for Bus-Oriented Systems SC PACKAGE
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SN74S1056A
SDLS019A
SN74S1056A
15ocal
SN74S1056
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ic number of varactor diode
Abstract: LTC1340 LTC1429 varactor diode capacitance measurement CA 1340 symbol of varactor diode and equivalent circuit LTC1261 LTC1340CMS8 LTC1340CS8 LTC1550
Text: LTC1340 Low Noise, Voltage-Boosted Varactor Driver NOT RECOMMENDED FOR NEW DESIGNS Contact Linear Technology for Potential Replacement U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1340 is a varactor diode driver designed to generate
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LTC1340
LTC1340
152mm)
254mm)
LTC1261,
LTC1429,
LTC1550,
LTC1551
434-0507q
1340f
ic number of varactor diode
LTC1429
varactor diode capacitance measurement
CA 1340
symbol of varactor diode and equivalent circuit
LTC1261
LTC1340CMS8
LTC1340CS8
LTC1550
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LTC1340
Abstract: LTC1429
Text: LTC1340 Low Noise, Voltage-Boosted Varactor Driver OBSOLETE: FOR INFORMATION PURPOSES ONLY Contact Linear Technology for Potential Replacement U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1340 is a varactor diode driver designed to generate
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LTC1340
LTC1340
254mm)
LTC1261,
LTC1429,
LTC1550,
LTC1551
434-0507q
1340f
LTC1429
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SN74S1053
Abstract: SN74S1053DBR SN74S1053DBRE4 SN74S1053DBRG4 SN74S1053DW SN74S1053DWG4 SN74S1053DWR SN74S1053DWRG4
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
16-bit
SN74S1053
SN74S1053DBR
SN74S1053DBRE4
SN74S1053DBRG4
SN74S1053DW
SN74S1053DWG4
SN74S1053DWR
SN74S1053DWRG4
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ix 3368
Abstract: logic selection guide
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
18rmination
SN74S1053DBR
SN74S1053DW
ix 3368
logic selection guide
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Untitled
Abstract: No abstract text available
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
16-bit
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SN74S1053
Abstract: SN74S1053DBR SN74S1053DBRE4 SN74S1053DBRG4 SN74S1053DW SN74S1053DWG4 SN74S1053DWR SN74S1053DWRG4
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
16-bit
SN74S1053
SN74S1053DBR
SN74S1053DBRE4
SN74S1053DBRG4
SN74S1053DW
SN74S1053DWG4
SN74S1053DWR
SN74S1053DWRG4
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SN74S1056
Abstract: SN74S1056D SN74S1056DR SN74S1056SC
Text: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems
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SN74S1056
SDLS019B
SN74S1056
SN74S1056D
SN74S1056DR
SN74S1056SC
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Untitled
Abstract: No abstract text available
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
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SN74S1056
Abstract: No abstract text available
Text: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems
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SN74S1056
SDLS019B
SN74S1056
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SN74S1051
Abstract: No abstract text available
Text: SN74S1051 12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS018A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D D OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for
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SN74S1051
12-BIT
SDLS018A
300-mil
12-bit
SN74S1051
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swg copper wire 25 32
Abstract: Scans-001779 CV2341 R644 noise diode marconi company marconi
Text: C O A X IA L NO ISE DIODE CV2341 T U N G ST EN FILAMENT ISSUE 2 A coaxial noise diode of 7 0 0 characteristic impedance suitable for use at frequencies up to 2500Mc/s with correction as specified and at currents up to 200 mA. FILA M EN T *Vf range 0 —4-7
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CV2341
2500Mc/s
CV2341
swg copper wire 25 32
Scans-001779
R644
noise diode
marconi company
marconi
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Untitled
Abstract: No abstract text available
Text: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY _SDLS019B- APRIL 1990 - REVISED JULY 1997 Designed to Reduce Reflection Noise SC PACKAGE TOP VIEW Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems
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SN74S1056
SDLS019B-
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