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    NMOS TRANSISTOR 0.35 UM Search Results

    NMOS TRANSISTOR 0.35 UM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NMOS TRANSISTOR 0.35 UM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nmos transistor 0.35 um

    Abstract: transistor 548
    Text: 0.30um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 3.3V ƒ Starting material P(100), Non-EPI ƒ Well Retrograde twin well structure ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide Thermally grown oxide of 73A thickness in electrical


    Original     		PDF

    mos rm3 data

    Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


    Original     		PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"

    MOS RM3

    Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials

    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35-micron MOS RM3

    1 kilo ohm resistor specifications

    Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
    Text: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •


    Original     		PDF AT46700 1 kilo ohm resistor specifications RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3

    cmos transistor 0.35 um

    Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
    Text: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features ƒ Vdd Core/IO 3.3V/3.3V, 5V/5V ƒ Substrate P-type (100), Non-EPI ƒ Well Retrograde Twin Well (NW, PW) ƒ Isolation Conventional LOCOS ƒ Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS


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    0.35Um 1P4M

    Abstract: nmos transistor 0.35 um
    Text: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS


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    2P4M

    Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
    Text: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)


    Original     		PDF 8V/18V 100x100um2 2P4M cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m

    2P4M P 82

    Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
    Text: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um


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    TRANSISTOR 545

    Abstract: No abstract text available
    Text: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel


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    all transistor

    Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
    Text: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation


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    bi 370 transistor

    Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
    Text: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF V/20V 30um2 36um2 bi 370 transistor transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor

    transistor bI 240

    Abstract: transistor bI 340 TRANSISTOR BI 185 BI 340 BPSG
    Text: 0.25um 1P5M Logic 2.5V / 5.0V / 30V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) Channel Gate Oxide ƒ ƒ ƒ ƒ ƒ Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF V/30V 30um2 36um2 transistor bI 240 transistor bI 340 TRANSISTOR BI 185 BI 340 BPSG

    2P4M

    Abstract: 2P4M in nmos transistor 0.35 um cmos transistor 0.35 um 0.35Um 2P4M 2P4M datasheet 0.35um 2p4m cmos 0.35Um
    Text: 0.35um 2P4M Embedded Flash 3.3V updated in 2005.03.18 Features ƒ Voltage Logic/Cell 3.3V/10V ƒ Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization Barrier Metal


    Original     		PDF V/10V 2P4M 2P4M in nmos transistor 0.35 um cmos transistor 0.35 um 0.35Um 2P4M 2P4M datasheet 0.35um 2p4m cmos 0.35Um

    0.35uM STI

    Abstract: MAGNACHIP 0.35um 0.32um CMOS
    Text: 0.25um 1P5M Generic 2.5V / 3.3V or 2.5V / 5V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric


    Original     		PDF 30um2 36um2 0.35uM STI MAGNACHIP 0.35um 0.32um CMOS

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    magnachip 0.18um

    Abstract: NMOS transistor 0.18 um CMOS hv 082 MagnaChip Semiconductor HV800 magnachip 0.18um CMOS
    Text: 0.18um 1P4M High Voltage 30V updated in 2005.03.29 Features Voltage Logic(LV,MV ,High Voltage) ƒ 1.8V/5V/30V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Quadruple-Well ( Hnwell, Hpwell for HV-Device, Nwell, Pwell for LV, MV-Device )


    Original     		PDF V/5V/30V magnachip 0.18um NMOS transistor 0.18 um CMOS hv 082 MagnaChip Semiconductor HV800 magnachip 0.18um CMOS

    nmos transistor 0.35 um

    Abstract: No abstract text available
    Text: 0.25um 1P5M Logic 2.5V / 3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF 32um2 36um2 30um2 nmos transistor 0.35 um

    UM 66 datasheet

    Abstract: UM 66 in
    Text: 0.22um 1P5M Logic 2.5V /3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ Vdd Core/IO Well Isolation Transistor Channel Gate Oxide Gate Material LDD & Source/Drain ƒ Metallization Barrier Metal Metal Stacked Via ƒ Lithography ƒ Speed (nsec/gate) 2.5V/3.3V


    Original     		PDF 27um2 32um2 UM 66 datasheet UM 66 in

    Untitled

    Abstract: No abstract text available
    Text: 0.25um 2P5M Mixed Signal 2.5V / 3.3V updated in Oct 01, 2004 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF 32um2 36um2 30um2 100um2

    1P2M

    Abstract: No abstract text available
    Text: 2.0um 1P2M High Voltage 200V / 5V updated in 2005.03.30 Features ƒ Voltage Logic,High Voltage 5V/5V,200V/5V ƒ Starting material SOI Wafer (BOX 2.5um, Si 7.5um), P-type (100), 50~100 ohm-cm ƒ Well Structure CMOS Quadruple-Well (Hnwell, Hpwell for HV-Device,


    Original     		PDF 00V/5V 1P2M