Untitled
Abstract: No abstract text available
Text: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF
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F-67441
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Untitled
Abstract: No abstract text available
Text: 9 =W S age TNC P H Ro oir / See CONDENSATEURS CHIPS CERAMIQUE MULTICOUCHES MULTILAYER CERAMIC CHIP CAPACITORS Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards E12 E24 E48 E96
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Untitled
Abstract: No abstract text available
Text: TCE 11 TCE 13 CONDENSATEURS CERAMIQUE MOULES CLASSE 1 MOLDED CERAMIC CAPACITORS CLASS 1 NP0 NP0 NP0 -150 ppm/°C NP0 Conformes aux spécifications des normes CECC 30600 et NF C 83131 In accordance with the specifications of CECC 30600 and NF C 83131 standards
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0603CG
Abstract: No abstract text available
Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors
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Size1210
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50-to-500V
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0603CG
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General purpose NP0
Abstract: No abstract text available
Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors
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Size1210
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FSU01LG
Abstract: Eudyna Devices
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
Eudyna Devices
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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General purpose NP0
Abstract: No abstract text available
Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Oct 26, 2009 V.2 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose NP0
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fujitsu GHz gaas fet
Abstract: fujitsu gaas fet FSU01LG
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
FCSI0598M200
fujitsu GHz gaas fet
fujitsu gaas fet
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YAGEO
Abstract: General purpose NP0
Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – June 14, 2011 V.7 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose
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Size1210
16V-to100V
50-to-500V
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YAGEO
General purpose NP0
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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YNM0007
Abstract: YNM0008 General purpose NP0
Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Jan 06, 2011 V.6 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose
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16V-to100V
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YNM0007
YNM0008
General purpose NP0
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452 fet
Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
12GHz
FSU01LG
FCSI0598M200
452 fet
fujitsu GHz gaas fet
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: plerowTM ALN0855 Internally Matched LNA Module Features Description • S21 = 27.4 dB@829 MHz = 26.6 dB@881 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5 V Supply · High OIP3@Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount
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ALN0855
25x25mm
13x13mm)
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fujitsu gaas fet
Abstract: fujitsu GHz gaas fet
Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package
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FSU02LG
FSU02LG
FCSI0598M200
fujitsu gaas fet
fujitsu GHz gaas fet
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FSU02LG
Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package
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FSU02LG
FSU02LG
Dissipa4888
Eudyna Devices
FUJITSU RF 053
DC bias of gaas FET
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phycomp capacitors npo
Abstract: YNM0007 YNM0008 General purpose NP0
Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Jun 02, 2009 V.1 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors SCOPE This specification describes NP0
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phycomp capacitors npo
YNM0007
YNM0008
General purpose NP0
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Untitled
Abstract: No abstract text available
Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package
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FSU02LG
FSU02LG
Eud49
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1084 fet
Abstract: fujitsu gaas fet fujitsu GHz gaas fet
Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package
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FSU02LG
FSU02LG
FCSI0598M200
1084 fet
fujitsu gaas fet
fujitsu GHz gaas fet
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5503 FET
Abstract: 5503 GM FSU02LG FSU02
Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package
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FSU02LG
FSU02LG
5503 FET
5503 GM
FSU02
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - ZEL-0812LN Amplifier print this page ZEL-0812LN Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 800-1200 20 ±1.00 +8.00
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ZEL-0812LN
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General purpose NP0
Abstract: No abstract text available
Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Apr 15, 2009 V. 0 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors SCOPE This specification describes NP0
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50-to-500V
3-to-50V
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FSU02LG
Abstract: v 4836 fujitsu GHz gaas fet
Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package
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FSU02LG
FSU02LG
FCSI0598M200
v 4836
fujitsu GHz gaas fet
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