x-band microwave fet
Abstract: NEZ1011-2E 17148
Text: 2 W X-BAND INTERNALLY NEZ1011-2E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-2E
NEZ1011-2E
SiO242
24-Hour
x-band microwave fet
17148
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NEZ1011-4E
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-4E 4 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-4E is power GaAs FET which provides high gain, high efficiency and high output power in X-band. 8.25 ± 0.15
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NEZ1011-4E
NEZ1011-4E
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x-band microwave fet
Abstract: NEZ1011-8E pt 2399
Text: 8 W X-BAND INTERNALLY NEZ1011-8E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5 dBm TYP PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • HIGH EFFICIENCY: 25% TYP
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NEZ1011-8E
NEZ1011-8E
24-Hour
x-band microwave fet
pt 2399
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Nec K 872
Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
Nec K 872
102528
NEC 2905
139492
T-78
72248
121-138
26433
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NEC1011-5E
Abstract: NEZ1011-5E NEZ1414-5E T-78
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-5E,
NEZ1414-5E
NEZ1011-5E
NEZ1414-5E
NEC1011-5E)
NEZ1414-5E)
NEC1011-5E
T-78
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NEZ1011-8E
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 8 W X-BAND INTERNALLY NEZ1011-8E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5 dBm TYP PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1
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NEZ1011-8E
NEZ1011-8E
24-Hour
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NEZ1011-3E
Abstract: NEZ1414-3E T-78 1981 3E
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-3E,
NEZ1414-3E
NEZ1011-3E
NEZ1414-3E
NEZ1011-3E)
NEZ1414-3E)
T-78
1981 3E
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x-band microwave fet
Abstract: NEZ1011-3E
Text: 3 W X-BAND INTERNALLY NEZ1011-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INPUT AND OUTPUT INTERNALLY MATCHED FOR
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NEZ1011-3E
NEZ1011-3E
24-Hour
x-band microwave fet
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NEZ1011-5E
Abstract: T-78 138312
Text: 5 W X, Ku-BAND POWER GaAs FET NEZ1011-5E FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE T-78 • HIGH LINEAR GAIN: 8.0 dB TYP 8.25 – 0.15 • HIGH EFFICIENCY: 30% TYP • INPUT AND OUTPUT INTERNALLY MATCHED
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NEZ1011-5E
NEZ1011-5E
24-Hour
T-78
138312
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NEZ1011-8E
Abstract: No abstract text available
Text: DATA PRODUCT SHEET PRELIMINARY INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-8E is power GaAs FET which provides high 0.5±0.05 1.5 CHAMFER 4 PLACES gain, high efficiency and high output power in Ku-band.
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NEZ1011-8E
NEZ1011-8E
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FET 6626 data
Abstract: 16298 x-band microwave fet NEZ1011-4E
Text: 4 W X-BAND POWER GaAs FET NEZ1011-4E N-CHANNEL GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.0 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-4E
NEZ1011-4E
24-Hour
FET 6626 data
16298
x-band microwave fet
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nec 258
Abstract: NEZ1011-8E NEZ1414-8E
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
nec 258
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
OutputI773
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x-band power TR
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4 W X-BAND POWER GaAs FET N-CHANNEL GaAs MESFET FEATURES OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 36.5 dBm TYP NEZ1011-4E Units in mm PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.0 dB TYP • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-4E
NEZ1011-4E
x-band power TR
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554-1 MAG
Abstract: No abstract text available
Text: 8 W X-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES NEZ1011-8E OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 39.5 dBm TYP Units in mm PACKAGE O UTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE • HIGH EFFICIENCY: 25% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-8E
NEZ1011-8E
24-Hour
554-1 MAG
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99419
Abstract: No abstract text available
Text: _ DATA SHEET_ _ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ101.1-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-4E,
NEZ1414-4E
NEZ101
NEZ1414-4E
NEZ1011-4E)
NEZ1414-4E)
99419
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-5E,
NEZ1414-5E
NEZ1011-5E
NEZ1414-5E
NEC1011-5E)
NEZ1414-5E)
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-3E,
NEZ1414-3E
NEZ1011-3E
NEZ1414-3E
NEZ1011-3E)
NEZ1414-3E)
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NEC 2933
Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
NEC 2933
2912 nec
NEC 2705
72248
NEC 2705 L 107
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62095
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are.power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal'input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
62095
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm T h e N E Z 1 0 1 1 -8 E is p o w e r G aA s F ET w hich p ro vid e s high gain, high e fficie n cy and high o u tp u t po w e r in K u-band.
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NEZ1011-8E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 8 W X-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES NEZ1011-8E OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 39.5 dBm TYP Units in mm PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE • HIGH EFFICIENCY: 25% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-8E
NEZ1011-8E
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NEZ1011-4E
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4 W X-BAND POWER GaAs FET NEZ1011-4E N-CHANNEL GaAs MESFET FEATURES OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 36.5 dBm TYP Units in mm PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.0 dB TYP • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-4E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 2 W X-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 34 dBm TYP NEZ1011-2E Units in mm PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-2E
NEZ1011-2E
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