Untitled
Abstract: No abstract text available
Text: NEC SEMICONDUCTOR DEVICE RELIABILITY/QUALITY CONTROL SYSTEM MICROCOMPUTER LSI MEMORY IC GATE ARRAY LOGIC LSI 1. BASIC PRINCIPLES OF THE RELIABILITY/QUALITY CONTROL SYSTEM . 3 2. MANUFACTURING PROCESS QUALITY CONTROL .
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marking code B2 NEC
Abstract: NEC tantalum capacitor 104 TANTALUM capacitor nec date code marking NEC 105M C105 SVHA1A225M SVHB21A475M SVHC1A156M DIP capacitor tantalum electronic corporation
Text: DATA SHEET TANTALUM CAPACITOR SV/H SERIES SURFACE MOUNT RESIN MOLDED TANTALUM CHIP CAPACITORS HIGH RELIABILITY NEC’s SV/H series solid tantalum capacitor has developed for automotive application. Comparing to the former type R Series , the higher reliability and the higher performance have been built in the
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DE0202
marking code B2 NEC
NEC tantalum capacitor
104 TANTALUM capacitor nec
date code marking NEC
105M
C105
SVHA1A225M
SVHB21A475M
SVHC1A156M
DIP capacitor tantalum electronic corporation
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General Micro-electronics
Abstract: SMT pitch roadmap ansys darveaux ansys CP-01019-1 Electronic Arrays FR4 thermal expansion constant vs temperature neural network BGA cte amkor flip
Text: Building Reliability Into Full-Array BGAs Yuan Li, Ph.D., Anil Pannikkat, Ph.D., Larry Anderson, Tarun Verma, Bruce Euzent Altera Corporation 101 Innovation Drive, San Jose, CA 95134 Electronic Arrays, NEC, IMP and Altera Corp. He joined Altera in 1992 and is currently Director
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TR-NWT-001217
Abstract: IEC60107-4-104 001217 MIL-STD-202F101D
Text: NEW PRODUCTS 5 2.0 mm PITCH METRIC CONNECTOR Seiichi Murakami Introduction NEC has developed a series of metric connectors FB series with excellent features to aid high-density mounting, a high transmission rate, and high connection reliability. These connectors are ideal boardto-board connectors for connecting the
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IEC60107-4-104
TR-NWT-001217)
MIL-STD-202F-101D
TR-NWT-001217
IEC60107-4-104
001217
MIL-STD-202F101D
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PA101B
Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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PA101
PA102
PA103
PA104
P10944EJ2V0AN00
PA101B
PA103
PA104
MICRO-X TRANSISTOR MARK Q6
4 npn transistor ic 14pin
upa101g
PA102B
UPA101
P10944EJ2V0AN00
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smt 35rv
Abstract: smd code marking NEC tantalum capacitor DN0J101M1S NRA225M10 smd code marking NEC capacitor MARKING CODE SMD JW DN0J 35rv transistor horizontal c 5936 104 TANTALUM capacitor nec
Text: CAPACITORS DATA BOOK NEC Corporation 1995 PREFACE Since the development of solid electrolyte tantalum capacitor having excellent performance in 1955, NEC has been advancing research into new materials and improved production technologies, and has introduced
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VIC3151,
smt 35rv
smd code marking NEC tantalum capacitor
DN0J101M1S
NRA225M10
smd code marking NEC capacitor
MARKING CODE SMD JW
DN0J
35rv
transistor horizontal c 5936
104 TANTALUM capacitor nec
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gf200 form
Abstract: IR100 8B10B PF200 S100 S200 TP100
Text: TERMBOY IEEE1394 LONG-HAUL ADAPTER The Termboy long-haul adapter extends distance between equipment from 4.5 m to over 50 m, while keeping interoperability with IEEE1394-1995 equipment. The Termboy family supports modified 8B10B coding in compliance with P1394b draft specifications, and has alternative four PMDs for long-haul
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IEEE1394
IEEE1394-1995
8B10B
P1394b
PF200,
GF200)
S14238EU1V0PB00
gf200 form
IR100
8B10B
PF200
S100
S200
TP100
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uPD65801
Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device
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PD65800
uPD65801
UPD65812
uPD65800
PD65810
PD65811
CMOS Transmission gate Specifications
uPD65806
UPD65804
uPD65802
uPD65813
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nec naming rule
Abstract: L302
Text: NEC Electronics Inc. UNIVERSAL PCI SERIES MIXED-VOLTAGE 0.6-MICRON CMOS GATE ARRAYS March 1995 Preliminary Description Figure 1. Application Example NEC's Universal PCI Series gate array family provides designers with the flexibility and performance required to
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D17709
Abstract: SE-17709
Text: User’s Manual SE-17709 System Evaluation Board Target Devices µPD17704A µPD17705A µPD17707A µPD17708A µPD17709A µPD17717 µPD17718 µPD17719 Document No. U10663EJ4V0UM00 4th edition Date Published September 2001 N CP(K) Printed in Japan 1995, 2001
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SE-17709
PD17704A
PD17705A
PD17707A
PD17708A
PD17709A
PD17717
PD17718
PD17719
U10663EJ4V0UM00
D17709
SE-17709
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MF-1134
Abstract: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL gas detector NDL5405 NDL5405C NDL5430C NDL5430CR NDL5471RC NDL5490 NDL5490L
Text: PRELIMINARY DATA SHEET PHOTO DIODE NDL5430C Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS for 10 Gb/s f30 mm InGaAs PIN PHOTO DIODE DESCRIPTION NDL5430C Series are InGaAs PIN photo diodes for 10 Gb/s long wavelength transmission systems. It covers
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NDL5430C
NDL5430C
NDL5430CR
MF-1134
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
gas detector
NDL5405
NDL5405C
NDL5430CR
NDL5471RC
NDL5490
NDL5490L
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NNCD6.8G
Abstract: NNCD3.9G NNCD5.6G IEC1000 IEC1000-42 IEC1000-4-2 NNCD27G C10535E C11531E D1164
Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3G to NNCD7.5G, NNCD27G ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on
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NNCD27G
IEC1000-4-2
IEC1000-4-
NNCD6.8G
NNCD3.9G
NNCD5.6G
IEC1000
IEC1000-42
NNCD27G
C10535E
C11531E
D1164
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induction cooker fault finding diagrams
Abstract: induction cooker schematic diagram EDS SHIELD DOMESTIC GAS DETECTOR schematic diagram induction cooker 3 gun sound generator UM 3562 NEC plasma tv schematic diagram ultrasonic flaw detector LS 2027 Final Audio LS 2027 audio Ultrasonic humidifier circuit
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C12769EJ2V0IF
induction cooker fault finding diagrams
induction cooker schematic diagram
EDS SHIELD DOMESTIC GAS DETECTOR
schematic diagram induction cooker
3 gun sound generator UM 3562
NEC plasma tv schematic diagram
ultrasonic flaw detector
LS 2027 Final Audio
LS 2027 audio
Ultrasonic humidifier circuit
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nec laser diode OTDR
Abstract: C10535E MEI-1202 NDL7581P NDL7581PC NDL7581PD
Text: DATA SHEET LASER DIODE NDL7581P InGaAsP STRAINED DC PBH PULSED LASER DIODE MODULE 1650 nm OTDR APPLICATION DESCRIPTION NDL7581P is a 1650 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with singlemode fiber and internal thermoelectric cooler. It is designed for light sources of optical
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NDL7581P
NDL7581P
nec laser diode OTDR
C10535E
MEI-1202
NDL7581PC
NDL7581PD
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Untitled
Abstract: No abstract text available
Text: MICROCOMPUTER LSI MEMORY 1C GATE ARRAY LOGIC LSI The information In th is docum ent 1« »ubject to change w ith o u t notice. Document No. Cl0983EJ3V0tF00 3rd edition (Previous No. iEi-1203) Date Published December 1995 P Printed in Japan NEC Corporation 1986
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Cl0983EJ3V0tF00
iEi-1203)
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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nec d 588
Abstract: nec naming rule nec product naming rule NEC CMOS-4
Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required
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35-MICRON
66MHz
nec d 588
nec naming rule
nec product naming rule
NEC CMOS-4
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uPD65801
Abstract: uPD65800 UPD65804
Text: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device
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H27SSS
uPD65801
uPD65800
UPD65804
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Untitled
Abstract: No abstract text available
Text: sep S 7 1995 NEC NEC Electronics Inc. ffPD42S64800, 42S65800 8,388,608 X 8-Bit Dynamic CMOS RAM Preliminary Septem ber 1993 Description The /¿PD42S64800 and jl/PD42S65800 are 64M-bit dy namic RAMs organized as 8,388,608 words by 8 bits. They are designed to operate from a single +3.3-volt
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ffPD42S64800,
42S65800
PD42S64800
jl/PD42S65800
64M-bit
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detector apd nec
Abstract: NDL5405L NDL5490 NDL5490L NDL5500 NDL5510 NDL5520C NDL5530 NDL5530C NDL5531
Text: DATA SHEET _ PHOTO DIODE NDL5530C 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS <¿30 jum InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5530C is an InGaAs avalanche photo diode especially designed for a detector of long wavelength optical fiber
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NDL5530C
detector apd nec
NDL5405L
NDL5490
NDL5490L
NDL5500
NDL5510
NDL5520C
NDL5530
NDL5531
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2SJ460
Abstract: MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ460
2SJ460
MEI-1202
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d1072
Abstract: 2SK2541 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWINGS in millimeter The 2SK2541 is a switching device which can be driven directly by a 1.5 V power source. The M O S FET has excellent switching characteristics and is suitable
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2SK2541
2SK2541
d1072
MEI-1202
MF-1134
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2SK2541
Abstract: MEI-1202 MF-1134 NEC reliability 1995
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SK2541
2SK2541
25ndustrial
MEI-1202
MF-1134
NEC reliability 1995
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d1072
Abstract: 2SJ460 MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ460 is a switching device which can be driven directly by a 2.5 V power source. PACKAGE DRAWINGS in millimeter The MOS FET has excellent switching characteristics and is suitable
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2SJ460
2SJ460
d1072
MEI-1202
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