e10501
Abstract: 7 segment E10501 A1015 ice debug tool 78k0 data sheet 7segment LED digital clock with 7segment DIODE F4005 F4007 diode 7 segment LED display project sm-4 sharp
Text: User’s Manual SM+ System Simulator Operation Target Device SM+ for V850 Ver. 2.00 SM+ for 78K0 Ver. 1.01 SM+ for 78K0S Ver. 1.01 Document No. U17246EJ2V0UM00 2nd edition Date Published November 2004 CP(K) NEC Electronics Corporation 2004 Printed in Japan
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78K0S
U17246EJ2V0UM00
U17246EJ2V0UM
e10501
7 segment E10501
A1015
ice debug tool 78k0
data sheet 7segment LED
digital clock with 7segment
DIODE F4005
F4007 diode
7 segment LED display project
sm-4 sharp
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7474 D flip-flop circuit diagram
Abstract: Multiplexer 74157 application circuit diagram of ddr ram 74157 74157 pin diagram RAM circuit diagram ELPIDA DDR manual E0124N FPM DRAM sdram controller
Text: User’s Manual SYNCHRONOUS DRAM Document No. E0124N10 Ver.1.0 (Previous No. M12394EJ2V2AN00) Date Published May 2001 CP(K) Elpida Memory, Inc. 2001 Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. SUMMARY OF CONTENTS
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E0124N10
M12394EJ2V2AN00)
7474 D flip-flop circuit diagram
Multiplexer 74157 application
circuit diagram of ddr ram
74157
74157 pin diagram
RAM circuit diagram
ELPIDA DDR manual
E0124N
FPM DRAM
sdram controller
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"VCO circuit diagram"
Abstract: FC64M VCO circuit diagram nec vco frequency division multiplexing circuit diagram
Text: 15.3 A 9.9G-10.8Gb/s Rate-Adaptive Clock and Data-Recovery with No External Reference Clock for WDM Optical Fiber Transmission. H. Noguchi, T. Tateyama, M. Okamoto, H. Uchida, M. Kimura, K. Takahashi Fiber Optic Devices Division, NEC Corporation A clock and data recovery CDR circuit applicable for any bit-rate between 9.9G and 10.8Gb/s without
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9G-10
10mVpp,
95328Gb/s,
50k-80MHz)
"VCO circuit diagram"
FC64M
VCO circuit diagram
nec vco
frequency division multiplexing circuit diagram
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LBIT 204
Abstract: uPD75X
Text: bME7S2S LMT INECE NEC NEC Electronics Inc. pPD78322 Family ffPD78320/322/P322 16/8-Bit, K-Series Microcomputers With A/D Converter, Real-Time Output Ports July 1993 Description □ Minimum in stru ctio n time: 250 ns a t 16 MHz The ¿/PD78320, fjPD78322, and ¿¿PD78P322 are mem
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pPD78322
ffPD78320/322/P322)
16/8-Bit,
/PD78320,
fjPD78322,
PD78P322
16/8-bit
16-bit
F-80-3B9-1)
b427525
LBIT 204
uPD75X
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC ncr » M 0 S FIELD EFFECT TRANSISTOR BUECTRON DEVICE 2 S K 1 582 N-CHANNEL MOS FET FOR SWITCHING The 2S K 1582, N-channe! vertical type MOS FET, is a switching P A C K A G E D IM E N S IO N S Unit : mm device which can be driven directly by the output of fCs having a 5 V
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HXD BUZZER
Abstract: No abstract text available
Text: N E C ELECTRONICS INC NEC Electronics Inc. fc,7E J> • b457525 OüBTHfil 3TQ « N E C E JUPD78064 Family frfPD78062/063/064/P064 8-Bit, K-Series Microcontrollers With LCD Controller/Driver, UART, and A/D Converter September 1993
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b457525
JUPD78064
frfPD78062/063/064/P064)
JUPD78062,
pPD78063,
/PD78064,
PD78P064
100-Pin
P100GF-65-3BA)
83YL-5S11B
HXD BUZZER
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TRW J500
Abstract: k45752 52S marking
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and
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uPD42S4260L
uPD424260L
16-BIT,
fiPD42S4260L,
424260L
PD42S4260L
44-pin
40-pin
/jPD42S4260L-A70,
424260L-A70
TRW J500
k45752
52S marking
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424260L
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / juPD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿iPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page m ode and
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uPD42S4260L
uPD424260L
16-BIT,
iPD42S4260L,
424260L
/jPD42S4260L
44-pin
40-pin
VP15-207-2
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NE67383
Abstract: No abstract text available
Text: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz
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NE67300
NE67383
NE67383
NE673
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NE32000
Abstract: NE32084 NE32083A
Text: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)
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NE32000
NE32083A
NE32084
NE32083A)
NE32084)
NE320
NE32000
NE32084
NE32083A
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npn photo transistor
Abstract: 4173 diode VLP10 PS4601 T-41-73 photo transistor high current b427S2S
Text: Ju 1 ^ NEC ELECTRONICS INC 30E 1 • : ” bMS7S2S OOSITat 5 ■ T-l)|-7j PHOTO INTERRUPTER f PS4601 ONE PIECE PHOTO IN TERRU PTER P A C K A G E D IM E N S IO N S in miilimeterc D E S C R IP T IO N The PS4601 contains a GaAs L E D and NPN photo transistor
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b427S2S
PS4601
PS4601
Tj-25
T-41-73
T-41-73
npn photo transistor
4173 diode
VLP10
photo transistor high current
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2SD2159
Abstract: 2SC2500 2SC3345 2SC105 LM 3243 N 2SC3246H 2SC2879 2SC3227 2SC3225 2SC3296
Text: - m € £ tt Manuf. T y p e No. 3 ft SANYO S 2Ë TOS H IBA m NEC B ÍL H IT A C H I K ± Ü F U J IT S U fê T = s M A T S U S H IT A M IT S U B IS H I □ — ROHM 15 7 A 2SD 966 2SC3242A 2S Ü 1384 2SD 667 2S C 1 059 2 S C 3 244 2S C 2 061 2S C 2 611 2S C 2 637
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2SD1247
2SC2500
2SD966
2SC3242A
2SD1384
2SD438
2SC1627A
2SD667
2SC1059
2SC3244
2SD2159
2SC2500
2SC3345
2SC105
LM 3243 N
2SC3246H
2SC2879
2SC3227
2SC3225
2SC3296
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IR351C
Abstract: D42S4260G5
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e ¿ IP D 4 2 S 4 26 0 , 4 2 4 2 6 0 a re 2 6 2 ,1 4 4 w o rd s b y 16 b its d y n a m ic C M O S R A M s . T h e fa s t p a g e m o d e and b yte
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uPD42S4260
uPD424260
16-BIT,
VP15-207-2
IR35-207-2
IR351C
D42S4260G5
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TC787
Abstract: LT 7824 2SK1958 T210 T460 T540 TSS045 diode lt 0236 SA-0897 FET2SK1958
Text: JI -7\ l?\ I IK NEC M O S F ield E ffe c t T ra n s is to r 2SK1958 MOS F E T 2SK1958 Ü 1 .5 V | g f j j ^ 7 V N f - ^ / l 4 i ^ M O S F E T T'i> 9, Æ îtŒ T - lg ÿ jT 'ë , f r o K ÿ 4 7 l i ^ £ # # : m m ) J l 1 - S £ > g f r & ^ £ :iò , ^ -y F ^ > x f w i ü i l / t 'r " ^ # / 7 4- ¿f
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2SK1958
IEI-620)
IZBTi14Ã
TC787
LT 7824
2SK1958
T210
T460
T540
TSS045
diode lt 0236
SA-0897
FET2SK1958
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD78070AY 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD78070AY is a limited-function product from which the on-chip ROM of the ¿¡PD78078Y Subseries has been removed. Through interchangeable external ROM, program maintenance can be performed easily. Besides a high
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PD78070AY
PD78070AY
PD78078Y
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V2vFx
Abstract: 78p018f MEC 1300 nu
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION T h e ^ P D 7 8 P 0 1 8 F {A c o m e s un d e r a m ore severe qua lity a s s u ra n c e p ro g ra m than th e ¿/P D 76P 01 8= {stan dard grade), so it is cla s s ifie d a s spe c ia l grade in N E C ’s qua lity grade cla ssification .
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uPD78P018F
uPD76P018
PD78P018F
WS60-00-1
mPD78P01BFCW
64-pin
V2vFx
78p018f
MEC 1300 nu
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SA1015
Abstract: 2sa798 2SA1207 2SA836 2sa733 2sb631 hitachi 2SB631 NEC k 787 2SA785 2SA1016
Text: - 14 - S € Type No. 2SA 7B0A K — 2SA 781 (K) . 2SA 7822SA 783 2SA 784 2SA 785 2SA 786 2SA 787 2SA 788 2SA 789 2SA 790 _ 2SA 791 2SA 794 ' 2SA 794A 2SA 795 2SA 796 2SA 797 2SA 798 2SA 802 2SA 803 2SA 804 2SA 805 2SA 806 2SA 807, 2SA 808 . 2SA 809 2SA 810
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2SB631
2SA743
2SA699A
2SB1064
2SA1339
2SA1015
2SA1016
2SA1015
2SA675
2SA836
2sa798
2SA1207
2SA836
2sa733
2sb631 hitachi
2SB631
NEC k 787
2SA785
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BL339
Abstract: 78310 SCK-404 D78P214 PA-78P214CW KBR-12 SMT322 PD78210
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD78P214 8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The /tPD78P214 is an 8-bit single-chip microcomputer with the on-chip mask ROM of the /iPD78214 replaced with an EPROM or one-time PROM. Since the ¿¿PD78P214 is a user-programmable microcomputer, it is suitable
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uPD78P214
uPD78214
PD78P214
PD78214
78K/II
fxPD78214
PC-9800
IE-78210-R
IE-7024O-R
BL339
78310
SCK-404
D78P214
PA-78P214CW
KBR-12
SMT322
PD78210
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TRANSISTOR 2N 7800
Abstract: D78P214 PA-78P214CW PA-78P214GQ PD78P214 UPD78P214CW PA-78P214GC uPD78P214 uPD78P214DW IE-78200-R-BK
Text: DATA SHEET MOS INTEGRATED CIRCUIT u P D 7 8 P 2 1 4 8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The ¿uPD78P214 is an 8-bit single-chip microcomputer with the on-chip mask ROM of the /¿PD78214 replaced with an EPROM or one-time PROM. Since the /xPD78P214 is a user-programmable microcomputer, it is suitable
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uPD78P214
uPD78214
/xPD78P214
PD78214
78K/II
/xPD78214
juPD78214
EWS-4800
HP9000
TRANSISTOR 2N 7800
D78P214
PA-78P214CW
PA-78P214GQ
PD78P214
UPD78P214CW
PA-78P214GC
uPD78P214DW
IE-78200-R-BK
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sem 2105 16 pin
Abstract: sem 2105
Text: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available
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NE72118
NE72118-T1
NE72118-T2
NE72118)
sem 2105 16 pin
sem 2105
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X30D
Abstract: No abstract text available
Text: N E C EL ECTRONI CS I NC ST b M2 7 S S S 0GGS532 INECE 1 ' T -4 Î-0 7 NEC Fiber Optic Devices OD-8325- LD Module OD-8325 is designed to couple LD Laser Diode output light efficiently to optical fiber. PIN photodiode is installed in OD-8325 for APC (Automatic Power Control)
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0GGS532
OD-8325LD
OD-8325
FO-0008
X30D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2M-BIT CMOS SYNCHRONOUS FAST 64K-WORD BY 32-BIT PIPELINED OPERATION SRAM Description The /iP D 432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.
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64K-WORD
32-BIT
uPD432232L
536-word
PD432232L
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2SC2804
Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Text: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787
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2SC51T
2SC2166
2SC2073
2SD859A
2SC3968
2SC780ACG)
2SC1279
2SC1515
2SC1573
2SC1914A
2SC2804
2SC517
2Sd428
2SC503
2SC1923
2sc1907
2SC1047
2SC1809
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