NE87112 Search Results

NE87112 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE87112		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF

NE87112 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1222L Abstract: NE871 ne87112 Text: NPN SILICON MICROWAVE TRAN SISTO R NE87112 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr = 2 GHz • LOW N O ISE FIGURE: N F = 1.5 dB at 70 MHz • HIGH BR EAK D O W N VOLTAGE: V cbo = 4 5 V DESCRIPTION The NE87112 N PN Silicon Transistor is designed for low-noise	OCR Scan	NE87112 NE87112 -25-c 2SCI260 -1222L 1222L NE871	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
73412 Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7	OCR Scan	NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

1222L

Abstract: NE871 ne87112
Text: NPN SILICON MICROWAVE TRAN SISTO R NE87112 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr = 2 GHz • LOW N O ISE FIGURE: N F = 1.5 dB at 70 MHz • HIGH BR EAK D O W N VOLTAGE: V cbo = 4 5 V DESCRIPTION The NE87112 N PN Silicon Transistor is designed for low-noise

OCR Scan

NE87112 NE87112 -25-c 2SCI260 -1222L 1222L NE871

PDF

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

OCR Scan

AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

PDF

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

OCR Scan

NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

PDF