ne72218 v58
Abstract: NE72218 NE72218-T1 4E12
Text: NE72218 C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm
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NE72218
OT-343)
NE72218
27e-12
1e-10
85e-12
055e-12
24-Hour
ne72218 v58
NE72218-T1
4E12
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C10535E
Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package
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NE72218
NE72218-T1
NE72218-T2
C10535E
NE72218
NE72218-T1
NE72218-T2
VP15-00-3
ne72218 v58
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ne72218 v58
Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3
Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 µm recessed gate • Gate Width : Wg = 400 µm • 4-pin super minimold • Tape & reel packaging only available
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NE72218
NE72218-T1
NE72218-T2
ne72218 v58
NE72218
NE72218-T1
NE72218-T2
VP15-00-3
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ne72218 v58
Abstract: NE72218-T1 NE72218-T2 C10535E NE72218 VP15-00-3
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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OCR Scan
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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AM/SSC 9500 ic data
Abstract: No abstract text available
Text: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •
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OCR Scan
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PDF
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NE72218
NE72218-T1
NE72218-T2
VP15-00-3
WS60-00-1
P12750EJ2V0D
AM/SSC 9500 ic data
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ne72218 v58
Abstract: tom 1157
Text: NEC C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz • NE72218 PACKAGE OUTLINE 18 - 2.1 0 .2 ± - O |to;o5
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OT-343)
NE72218
NE72218
1e-14
4e-12
27e-12
1e-10
85e-12
055e-12
2e-10
ne72218 v58
tom 1157
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MARKING V58
Abstract: No abstract text available
Text: C TO X BAND N-CHANNEL GaAs MESFET FEATURES NE72218 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 PACKAGE OUTLINE 18 (recessed gate) - 2.1 ± 0 .2 - H .25 ± 0.1 H GATE WIDTH: W g = 400 jim 0-3^0.05 4 PIN SUPER MINI MOLD
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NE72218
NE72218
24-Hour
MARKING V58
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