NE38018 V68
Abstract: NE38018 s2p NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215 NEC 703 NEC K 2500
Text: DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz
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NE38018
NE38018-T1
NE38018 V68
NE38018 s2p
NEC Ga FET marking L
HS350
NE38018
NE38018-T1
VP215
NEC 703
NEC K 2500
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NE38018 V68
Abstract: NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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