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    NDS8426 Price and Stock

    onsemi NDS8426A

    MOSFET N-CH 20V 10.5A 8SOIC
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    DigiKey NDS8426A Reel 2,500
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    Rochester Electronics LLC NDS8426A

    MOSFET N-CH 20V 10.5A 8SOIC
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    DigiKey NDS8426A Bulk 683
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    Fairchild Semiconductor Corporation NDS8426A

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    Bristol Electronics NDS8426A 2,250
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    Quest Components NDS8426A 2,932
    • 1 $1.414
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    NDS8426A 2,542
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    NDS8426A 1,800
    • 1 $1.414
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    Rochester Electronics NDS8426A 296,640 1
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    National Semiconductor Corporation NDS8426A

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    Bristol Electronics NDS8426A 2,025 9
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    Quest Components NDS8426A 1,620
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    NDS8426 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS8426 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8426 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8426 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8426 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS8426 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS8426A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Tra Original PDF
    NDS8426A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8426A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8426A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8426A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS8426A_NL Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDS8426 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS8426A

    Abstract: DS1015
    Text: January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS8426A NDS8426A DS1015

    1A98

    Abstract: NDS8426 ISS 99 diode
    Text: N July 1996 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDS8426 NDS8426 1A98 ISS 99 diode

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8426
    Text: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8426 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8426

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8426A
    Text: January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS8426A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8426A

    SD6000

    Abstract: NDS8426
    Text: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8426 NDS8426 SD6000

    NDS8426

    Abstract: No abstract text available
    Text: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8426 NDS8426

    NDS8426A

    Abstract: No abstract text available
    Text: January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS8426A NDS8426A

    560Uf 2.5v

    Abstract: Q10284-2 MV-GX MAX668 MBRD835LT4 NDS8426A
    Text: 7/20/99 - LHS +11V to 14.3V Input to 16V at 70 Watts 4.4A 11V to 14.3V IN L1 BH Q10284-2 3.9uH, 9A C1 Sanyo MV-GX 560uF 25V D1 MBRD835LT4 R7 4.7 Vout 16V 4.4A (70 Watts) Q1 NDS8426A 8 EXT 9 10 1 C7 4.7uF C8 0.22 4 VCC CS+ SHDN LDO U1 MAX668 PGND REF FREQ


    Original     		PDF Q10284-2 560uF MBRD835LT4 NDS8426A MAX668 560uF 560Uf 2.5v Q10284-2 MV-GX MAX668 MBRD835LT4 NDS8426A

    Untitled

    Abstract: No abstract text available
    Text: 19-3813; Rev 0; 9/05 KIT ATION EVALU E L B AVAILA Low-Voltage, Dual Hot-Swap Controllers with Independent On/Off Control The MAX5955 and MAX5956 are +1V to +13.2V dual hot-swap controllers with independent on/off control for complete protection of dual-supply systems. They allow


    Original     		PDF 100mV MAX5955/MAX5956 MAX5955 MAX5956 MAX5956AEEE+ MAX5956AUEE+ MAX5956BUEE MAX5956AUEE-T MAX5956AUEE MAX5956BUEE+

    MAX5904USA

    Abstract: IRF 543 MOSFET MAX5904 MAX5904ESA MAX5905ESA MAX5905USA MAX5906 MAX5909
    Text: 19-2238; Rev 2; 11/03 KIT ATION EVALU E L B A IL AVA Low-Voltage, Dual Hot-Swap Controllers/Power Sequencers The discharged filter capacitors of the circuit card provide low impedance to the live backplane. High inrush currents from the backplane to the circuit card can burn


    Original     		PDF MAX5904 MAX5909 MAX5904USA IRF 543 MOSFET MAX5904ESA MAX5905ESA MAX5905USA MAX5906 MAX5909

    Untitled

    Abstract: No abstract text available
    Text: KIT ATION EVALU LE B A IL A AV 19-1694; Rev 1a; 4/01 3V to 12V Current-Limiting Hot Swap Controllers with Autoretry, DualSpeed/BiLevel Fault Protection Features ♦ Provide Safe Hot Swap for +3V to +12V Power Supplies with Few External Components ♦ Unique Current Regulation Architecture


    Original     		PDF MAX4271/MAX4272/MAX4273 MAX4271/MAX4272/MAX4273

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    E16-1

    Abstract: MAX4271 MAX4271ESA MAX4272 MAX4272ESA MAX4273 MAX4273EEE MAX4273ESE INS290 fast comparator
    Text: 19-1694; Rev 2; 12/07 KIT ATION EVALU E L B A IL AVA 3V to 12V Current-Limiting Hot-Swap Controllers with Autoretry, DualSpeed/BiLevel Fault Protection Features The MAX4271/MAX4272/MAX4273 comprise a complete family of integrated 3V to 12V hot-swap controllers. They allow the safe insertion and removal of


    Original     		PDF MAX4271/MAX4272/MAX4273 MAX4273 E16-1 MAX4271 MAX4271ESA MAX4272 MAX4272ESA MAX4273 MAX4273EEE MAX4273ESE INS290 fast comparator

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R J a n u a ry1998 tm NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF NDS8426A NDS8426A

    Untitled

    Abstract: No abstract text available
    Text: July 1996 N NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    OCR Scan     		PDF NDS8426 NDS8426 193tQ

    NDS8426A

    Abstract: No abstract text available
    Text: January 1998 FAIRCHILD iM IC G N D U C T O R 1 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF NDS8426A NDS8426A

    LD 1106 BS

    Abstract: NDS8426
    Text: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		PDF NDS8426 RDS10N, bSG1130 LD 1106 BS NDS8426

    8426a

    Abstract: S8426A
    Text: F /M M R l C O C N H D U January 1998 I I - D C T O R tm NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor Features General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF NDS8426A 8426a S8426A

    Untitled

    Abstract: No abstract text available
    Text: September 1997 F A I R C H I L D SEM ICONDUCTO R tm NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 9.9 A, 20 V. Rds^n, = 0.015 & @ VGS= 4.5 V. transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS8426 NDSS426