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    NDB4060 Price and Stock

    Rochester Electronics LLC NDB4060

    MOSFET N-CH 60V 15A D2PAK
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    DigiKey NDB4060 Bulk 544
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    onsemi NDB4060

    MOSFET N-CH 60V 15A D2PAK
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    DigiKey NDB4060 Reel 800
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    NDB4060 Cut Tape 1
    • 1 $3.05
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    Rochester Electronics LLC NDB4060L

    MOSFET N-CH 60V 15A D2PAK
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    DigiKey NDB4060L Bulk 278
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    onsemi NDB4060L

    MOSFET N-CH 60V 15A D2PAK
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    DigiKey NDB4060L Reel 800
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    NDB4060L Cut Tape 1
    • 1 $1.8
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    SMC Corporation of America C96NDB40-60C

    CYLINDER WITH LOCK, TIE ROD, C96 SERIES | SMC Corporation C96NDB40-60C
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    RS C96NDB40-60C Bulk 5 Weeks 1
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    NDB4060 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDB4060 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB4060 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB4060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB4060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB4060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB4060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    NDB4060 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NDB4060L

    Abstract: NDP4060L 24V64 zener diode 12v 0.5 w
    Text: April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDP4060L NDB4060L NDB4060L 24V64 zener diode 12v 0.5 w PDF

    NDB4060

    Abstract: NDP4060
    Text: July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 15A, 60V. RDS ON = 0.10Ω @ VGS=10V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    Original     		NDP4060 NDB4060 NDB4060 PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor PDF

    NDB4060L

    Abstract: NDP4060L
    Text: & Na t i o n a I Semiconductor” A p ril 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 15A, 60V. RDS 0NI = O .m @ VGS = 5V power field effect transistors are produced using


    OCR Scan     		NDP4060L/ NDB4060L b5G1130 00MD2MM NDP4060L PDF

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D SEM IC ONDUCTO R April 1996 tm NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		NDP4060L NDB4060L NDB4060L PDF

    NDP4060L

    Abstract: NDB4060L
    Text: A p ril 1996 FAIRCHILD Ml C O N D U C T O R i NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		NDP4060L NDB4060L NDB4060L PDF

    NDB4060

    Abstract: NDP4060
    Text: July 1996 Nationa I Semiconductor " NDP4060/ NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS technology.


    OCR Scan     		NDP4060/NDB4060 bSD113G 0G4053Ã bS01130 004053R NDB4060 NDP4060 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		NDP4060 NDB4060 P4060 PDF

    NDB4060

    Abstract: NDP4060
    Text: J u ly 1 9 9 6 FAIRCHILD MICDNDUCTDR tm NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDP4060 NDB4060 NDB4060 PDF

    NDB4060L

    Abstract: No abstract text available
    Text: ^ A I R C H April 1996 I I - D M l C O IN D U C T O R NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		NDP4060L NDB4060L PDF