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    onsemi NCP5208DR2G

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    NCP5208DR2G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NCP5208DR2G On Semiconductor DDR-I/II Termination Regulaor Original PDF

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    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    Untitled

    Abstract: No abstract text available
    Text: NCP5208 DDR−I/II Termination Regulator The NCP5208 is a linear regulator specifically designed for the active termination of DDR−I/II SDRAM. The device can be operated from a single supply voltage as low as 1.7 V. For DDR−I applications, the device is capable of sourcing and sinking current up


    Original     		PDF NCP5208 NCP5208 NCP5208/D

    N5208

    Abstract: A114 JESD22 NCP5208 NCP5208DR2 NCP5208DR2G APE New Power MOSFETs
    Text: NCP5208 DDR−I/II Termination Regulator The NCP5208 is a linear regulator specifically designed for the active termination of DDR−I/II SDRAM. The device can be operated from a single supply voltage as low as 1.7 V. For DDR−I applications, the device is capable of sourcing and sinking current up


    Original     		PDF NCP5208 NCP5208 NCP5208/D N5208 A114 JESD22 NCP5208DR2 NCP5208DR2G APE New Power MOSFETs