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    NAND HAMMING CODE 2K BYTES Search Results

    NAND HAMMING CODE 2K BYTES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy
    MC2101F Rochester Electronics LLC MC2101F - Dual NAND Logic Gate Visit Rochester Electronics LLC Buy

    NAND HAMMING CODE 2K BYTES Datasheets Context Search

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    verilog code hamming

    Abstract: ebc2opb verilog code hamming 2k bytes Datasheet toshiba NAND Flash MLC gpr 2747 t mlc nand flash lsb msb toshiba MLC nand flash toshiba nand flash NAND flash part number decoder toshiba NAND Flash MLC
    Text: Title Page Nand Flash Controller Data Book SA14-2747-05 June 22, 2006 Copyright and Disclaimer Copyright International Business Machines Corporation 2006 All Rights Reserved Printed in the United States of America June 2006 The following are trademarks of International Business Machines Corporation in the United States, or other countries, or


    Original     		PDF SA14-2747-05 verilog code hamming ebc2opb verilog code hamming 2k bytes Datasheet toshiba NAND Flash MLC gpr 2747 t mlc nand flash lsb msb toshiba MLC nand flash toshiba nand flash NAND flash part number decoder toshiba NAND Flash MLC

    SAMSUNG NAND FLASH TRANSLATION LAYER

    Abstract: SAMSUNG NAND Flash Qualification Report SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL NAND FLASH TRANSLATION LAYER FTL vhdl code hamming block diagram code hamming using vhdl
    Text: APPLICATION NOTE for NAND Flash Memory Revision 2.0 Memory Product & Technology Division 1999. 12. 28 Product Planning & Application Engineering The Leader in Memory Technology 1 ELECTRONICS TABLE OF CONTENTS ¡ áINTRODUCTION 5. UTILIZING THE DEVICE IN THE


    Original     		PDF 128Mb 256Mb) 256Mb 512Mb 500us SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND Flash Qualification Report SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL NAND FLASH TRANSLATION LAYER FTL vhdl code hamming block diagram code hamming using vhdl

    SAMSUNG NAND Flash Qualification Report

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 256Mb NAND Flash Qualification Report samsung 8GB Nand flash
    Text: FLASH MEMORY K9K2G08R0B K9K2G08R0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K2G08R0B 100ns) SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 256Mb NAND Flash Qualification Report samsung 8GB Nand flash

    K9F1G08R0B-JIB0

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G08R0B K9F1G08R0B-JIB SAMSUNG 256Mb NAND Flash Qualification Reliability TADL samsung 8GB Nand flash samsung 2Gb nand flash K9F1G08R0B-JCB0
    Text: FLASH MEMORY K9F1G08R0B K9F1G08R0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08R0B 100ns) K9F1G08R0B-JIB0 SAMSUNG 4gb NAND Flash Qualification Report K9F1G08R0B K9F1G08R0B-JIB SAMSUNG 256Mb NAND Flash Qualification Reliability TADL samsung 8GB Nand flash samsung 2Gb nand flash K9F1G08R0B-JCB0

    K9F1G08U0C

    Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
    Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08B0C K9F1G08U0C K9F1G08X0C K9F1G08U0C K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report

    K9F2G08Q0M

    Abstract: K9F2G08U0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y
    Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34


    Original     		PDF K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y

    F59L1G81A

    Abstract: No abstract text available
    Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		PDF F59L1G81A 200us F59L1G81A

    NAND Flash

    Abstract: F59L1G81A
    Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		PDF F59L1G81A 200us it/528 NAND Flash F59L1G81A

    Untitled

    Abstract: No abstract text available
    Text: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes


    Original     		PDF F59L1G81A 200us it/528

    K9F1G08U0AYCB0

    Abstract: K9F1G08X0A-XIB0 K9F1G08U0A SAMSUNG MCP K9F1G08U0A-PCB0 K9F1G08U0A-YCB0 K9F1G08U0A-Y K9F1G08Q0A K9F1G08U0A-VIB0 Samsung K9F1G08U0A
    Text: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle


    Original     		PDF K9F1G08Q0A K9F1G08U0A 100ns K9F1G08U0AYCB0 K9F1G08X0A-XIB0 K9F1G08U0A SAMSUNG MCP K9F1G08U0A-PCB0 K9F1G08U0A-YCB0 K9F1G08U0A-Y K9F1G08Q0A K9F1G08U0A-VIB0 Samsung K9F1G08U0A

    K9F1G08

    Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
    Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		PDF K9F1G08Q0A K9F1G08D0A K9F1G08U0A K9F1G08Q0A-Y K9F1G08 K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y

    K9XXG08XXM

    Abstract: k9w8g16u1m K9K4G08Q0M-Y SAMSUNG 4gb NAND Flash Qualification Report Samsung K9W8G08U1M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16Q0M
    Text: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package


    Original     		PDF K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB0, K9XXG08XXM k9w8g16u1m K9K4G08Q0M-Y SAMSUNG 4gb NAND Flash Qualification Report Samsung K9W8G08U1M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16Q0M

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: K9K4G08U0M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16Q0M K9K4G16U0M K9W8G08U1M nand hamming code 2k bytes k9xxg16xxm
    Text: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package


    Original     		PDF K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB SAMSUNG 4gb NAND Flash Qualification Report K9K4G08U0M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16Q0M K9K4G16U0M K9W8G08U1M nand hamming code 2k bytes k9xxg16xxm

    K9F2G08X0M

    Abstract: 48-pin TSOP K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G16Q0M nand hamming code 2k bytes k9f2g0
    Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34


    Original     		PDF K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M K9F2G08Q0M K9F2G08U0M K9F2G08X0M 48-pin TSOP K9F2G16U0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M nand hamming code 2k bytes k9f2g0

    K9F2G08X0M

    Abstract: K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G08U0M K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application
    Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34


    Original     		PDF K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M K9F2G08Q0M K9F2G08U0M K9F2G08X0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application

    K9F1G08U0D-SCB0

    Abstract: K9F1G08U0D K9F1G08U0C K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D
    Text: FLASH MEMORY K9F1G08U0D K9F1G08U0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08U0D K9F1G08U0C 200us 700us K9F1G08U0D 250us 750us K9F1G08U0D-SCB0 K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D

    K9F1G08Q0A

    Abstract: No abstract text available
    Text: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle


    Original     		PDF K9F1G08Q0A K9F1G08U0A 100ns

    K9F2G08U0B

    Abstract: K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B K9F2G08B0B-P
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B-P

    K9F2G08U0B-PCB0

    Abstract: K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B-PCB0 K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		PDF K9K2G08U0A K9K2G08U0A-Y K9K2G08U0A-V K9K2G08U0A

    K9K4G08X0M

    Abstract: ecc 2112 samsung 8GB Nand flash
    Text: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Feb. 19. 200 3


    Original     		PDF K9K4G08Q0M-YCB0 K9K4G16Q0M-YCB0 K9K4G08U0M-YCB0 K9K4G16U0M-YCB0 K9K4G08X0M ecc 2112 samsung 8GB Nand flash

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue May. 31. 2004 Advance 0.1 1. Technical note is changed 2. Notes of AC timing characteristics are added


    Original     		PDF K9K2G08U0A K9K2G08U0A

    K9K2G08U0A-FIB0

    Abstract: K9K2G08U0A-VIB0 48-PIN K9K2G08U0A
    Text: Preliminary FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue May. 31. 2004 Advance 0.1 1. Technical note is changed 2. Notes of AC timing characteristics are added


    Original     		PDF K9K2G08U0A K9K2G08U0A-FIB0 K9K2G08U0A-VIB0 48-PIN K9K2G08U0A

    K9F2G08U0M-YCB0

    Abstract: No abstract text available
    Text: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001


    Original     		PDF K9F2G08Q0M-YCB0 K9F2G08U0M-YCB0 K9F2G16Q0M-YCB0 K9F2G16U0M-YCB0