Untitled
Abstract: No abstract text available
Text: I NA 122 INA122 INA 122 Single Supply, MicroPower INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● LOW QUIESCENT CURRENT: 60µA ● PORTABLE, BATTERY OPERATED SYSTEMS ● INDUSTRIAL SENSOR AMPLIFIER: Bridge, RTD, Thermocouple ● PHYSIOLOGICAL AMPLIFIER:
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INA122
60nV/â
INA122
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lm3242
Abstract: LM356 op-amp datasheet LM356 LM6484 SC14421 LM380 spice lm7412 LM117 model SPICE LM356 audio amplifier pc preamp with bass treble circuit diagrams lm324
Text: Welcome to National Semiconductor's latest Linear Designers' Guide! Included in this guide are: • Product selection trees • Associated guides with definitive specifications • Alphanumeric index, to assist in finding the product ID you are seeking
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com/whatsnew/whatsnew60
TYIN2000
lm3242
LM356 op-amp datasheet
LM356
LM6484
SC14421
LM380 spice
lm7412
LM117 model SPICE
LM356 audio amplifier
pc preamp with bass treble circuit diagrams lm324
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2GM sot-23 transistor
Abstract: marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818
Text: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,
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BC807,
BC808
OT-23
BC817
BC818
OT-23
2GM sot-23 transistor
marking code 1AM
2N3904 SOT-23 MARKING CODE
bc857 to92
TRANSISTOR 1g sot23 npn
pin configuration NPN transistor BC817 sot-23
TS560
1aM sot-23 transistor
bc848 to 92
BC848 e BC818
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RF/Microwave
Abstract: Surface Mount Thin-Film RF/Microwave Capacitor Technology Accu-P capacitors SRF 3733
Text: Thin-Film RF/Microwave Capacitor Technology Accu-P 5 Accu-P® Thin-Film Technology THE IDEAL CAPACITOR 1 The non-ideal characteristics of a real capacitor can be ignored at low frequencies. Physical size imparts inductance to the capacitor and dielectric and metal electrodes result in
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100MHz)
RF/Microwave
Surface Mount
Thin-Film RF/Microwave Capacitor Technology
Accu-P
capacitors
SRF 3733
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Untitled
Abstract: No abstract text available
Text: Precision Low Noise, Low Input Bias Current Operational Amplifiers ADA4077-2 Preliminary Technical Data FEATURES 1 8 V+ OUT B –IN B +IN B OP2177 4 5 OUT A 1 –IN A 2 +IN A 3 V– 4 Figure 1. 8-Lead MSOP RM Suffix 8 V+ OP2177 7 OUT B 6 –IN B 5 +IN B
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ADA4077-2
OP2177
PR10966-0-7/12
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Untitled
Abstract: No abstract text available
Text: Precision Low Noise, Low Input Bias Current Operational Amplifiers ADA4077-2 Preliminary Technical Data PIN CONFIGURATIONS OUT A –IN A +IN A V– 1 8 V+ OUT B –IN B +IN B OP2177 4 5 OUT A 1 –IN A 2 +IN A 3 V– 4 Figure 1. 8-Lead MSOP RM Suffix 8 V+
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ADA4077-2
OP2177
PR10966-0-7/12
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F503
Abstract: PDIP20 SDIP32 SO20 ST52F500
Text: ST52F500/F503 ST52F500/F503 8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, I2C, SPI PRODUCT PREVIEW Memories • Up to 8 Kbytes Single Voltage Flash Memory ■ 256 bytes of Register File ■ 256 bytes of RAM ■ Up to 4 Kbytes Data EEPROM ■ In Situ Programming in Flash devices (ISP)
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ST52F500/F503
F503
PDIP20
SDIP32
SO20
ST52F500
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-NGCON ITT’s NGCON Fiber Optic Connector System The next generation connector system for Naval and other Military/Aero-Space applications Consult Factory for C.O.T.S/MIL Spec Product Availability and Qualification Status MIL-PRF-NGCON Compliant Fiber Optic Connector System
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Untitled
Abstract: No abstract text available
Text: Toggles Series JB Low Profile Process Sealed Tactiles Rockers General Specifications Electrical Capacity Resistive Load Pushbuttons Low/Logic Level: Other Ratings Programmable Illuminated PB Keylocks Materials & Finishes Rotaries Slides Tactiles Tilt Contact Resistance:
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125mA
DC500
JB15KH-6C
AT4058
AT4059
AT4140
AT4077
AT4139
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ldpr 006h
Abstract: F503 PDIP20 SDIP32 SO20 ST52F500 400 wk2
Text: ST52F500/F503 ST52F500/F503 8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, I2C, SPI PRODUCT PREVIEW Memories • Up to 8 Kbytes Single Voltage Flash Memory ■ 256 bytes of Register File ■ 256 bytes of RAM ■ Up to 4 Kbytes Data EEPROM ■ In Situ Programming in Flash devices (ISP)
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ST52F500/F503
ldpr 006h
F503
PDIP20
SDIP32
SO20
ST52F500
400 wk2
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FZT949
Abstract: No abstract text available
Text: FZT949 FI Ff!TRlf!Al - CHARACTERISTICS . . . . . . . . . . . . . at . . T.-. . ~,”— PARAMETER Collector-Base Voltage Breakdown = 25°C} —- SYMBOL MIN. TYP. ‘( BR CBO -50 -80 –, MAX. UNIT CONDITIONS. v l&-l IC=-IKA, — Collector-Emitter
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FZT949
FZT949
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4501 ic
Abstract: npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 BC818 marking 5A
Text: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,
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BC807,
BC808
OT-23
BC817
BC818
OT-23
Group-16
BC807
4501 ic
npn transistors,pnp transistors
BC807
BC807-16
BC808
BC808-16
BC817
marking 5A
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Untitled
Abstract: No abstract text available
Text: BC817, BC818 Small Signal Transistors NPN Features SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) • NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits.
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BC817,
BC818
OT-23
BC807
BC808
OT-23
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BC818
Abstract: SOT-23 6C SOT-23 6F BC817-16 BC818-16 BC807 BC808 BC817
Text: BC817, BC818 Small Signal Transistors NPN FEATURES SOT-23 ♦ NPN Silicon Epitaxial Planar Transistors .122 (3.1) .118 (3.0) .016 (0.4) ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,
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BC817,
BC818
OT-23
BC807
BC808
OT-23
Group-16
BC817
BC818
SOT-23 6C
SOT-23 6F
BC817-16
BC818-16
BC807
BC817
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Untitled
Abstract: No abstract text available
Text: INSTR DESIGN/DISPLAY PDTS 3SE í • MêllOBb 0000042 fl « I D E A T-V/'OI _ _Zlwdea Description Part No. lv @ 3V Typ Min 201/2 Fig. No. Description Part No. lv @ 3V Min Typ 201 /2 Fig. No. - 114 201 /2 Fig. Na Flashing LED Lamps Max operating voltage 5 volts
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1BW TRANSISTOR
Abstract: No abstract text available
Text: T 3 9 -3 / FF 50 R 06 KL SE E EU P E C • 3M G 32T7 0 0 0 0 ^4 E b fi HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p e r module DC, pro Zwelg / per arm RthCK pro Baustein/per module pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften
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34D32CI7
1BW TRANSISTOR
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1RFD123
Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*
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IRFD120/121/122/123
12OR/121R/122R/123R
IRFD120,
IRFD121,
IRFD122,
IRFD123
IRFD120R,
IRFD121R,
IRFD122R,
IRFD123R
1RFD123
IRFD
123R
fd120
IRFD 120
IRFD 123
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Transistor BFT 99
Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Text: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF
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Q0G4713
Q62702-F513
051i0
Transistor BFT 99
BFT75
Q62702-F513
siemens CIB
BFt 66
Transistor BFT 44
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BC 148 transistor
Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32
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023SbOS
BC1211)
BC-121
Q60203-Q60203-Q60203-Q60203-Q60203-Q60203
Q60203-Q60203
Q60203
bc121.
bc122,
bc123
BC 148 transistor
transistor BC 147
NPN transistor bc 148
bc 147 transistor
of transistor bc 148
bc 148 npn transistor
S1000 Siemens
8C121
transistor bc 148
bc 149 transistor
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TIC 122 Transistor
Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32
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023SbO
BC-121
blu122,
BC123
0235bOS
QQQ41Q3
BC121.
BC122,
TIC 122 Transistor
bc 147 B transistor
FOR TRANSISTOR BC 149 B
BC 148 TRANSISTOR
transistor 45 f 122
NPN transistor bc 148
transistor bc 146
BC 148 L
transistor bc 148
transistor BC 157
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GM300
Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
GM300
CM602
ft06
transistor C633
FSP400
2n1763
C621
DA402
2N2458
transistor c640 npn
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TIL78
Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE
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TIL78
Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
SA2739
phototransistor OCP71
cm601
JAN2N491
photo transistor til78
til78 phototransistor
CM602
FPN100
ft06
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D1302
Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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