marking N20
Abstract: SO2222A SO2907A
Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A
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Original
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SO2222A
OT-23
SO2907A
OT-23
marking N20
SO2222A
SO2907A
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PDF
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SO2222A
Abstract: SO2907A marking n20
Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A
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Original
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SO2222A
OT-23
SO2907A
OT-23
SO2222A
SO2907A
marking n20
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PDF
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na 39
Abstract: SO2222A SO2907A
Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A
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Original
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SO2222A
OT-23
SO2907A
OT-23
na 39
SO2222A
SO2907A
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PDF
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2222a sot23
Abstract: transistor 2222a
Text: SO2222A SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type M arking SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS MEDIUM CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE PNP COMPLEMENTARY TYPE IS
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Original
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SO2222A
SO2907A
OT-23
2222a sot23
transistor 2222a
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PDF
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n13 sot 65
Abstract: n13 sot 23 marking N20 SO2222 SO2222A SO2907 SO2907A
Text: SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking SO2222 N13 SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY
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Original
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SO2222
SO2222A
SO2907
SO2907A
OT-23
n13 sot 65
n13 sot 23
marking N20
SO2222
SO2222A
SO2907A
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PDF
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Untitled
Abstract: No abstract text available
Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking SO2222A N20 s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN
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Original
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SO2222A
OT-23
SO2907A
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2
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Original
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AEC-Q101
J-STD-020
DDTC123ECA
DDTC143ECA
DDTC114ECA
DDTC124ECA
DDTC144ECA
DS30329
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PDF
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MARKING CODE n20
Abstract: DDTC144ECAQ-13-F N20 marking transistor marking n20
Text: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2
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Original
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AEC-Q101
J-STD-020
DDTC123ECA
DDTC143ECA
DDTC114ECA
DDTC124ECA
DDTC144ECA
DDTC115ECA
DS30329
MARKING CODE n20
DDTC144ECAQ-13-F
N20 marking transistor
marking n20
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PDF
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N20 marking transistor
Abstract: ddtc115eca7f Ic n13 MARKING CODE n20 N20 SOT23
Text: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2
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Original
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AEC-Q101
J-STD-020
DDTC123ECA
DDTC143ECA
DDTC114ECA
DDTC124ECA
DDTC144ECA
DDTC115ECA
DS30329
N20 marking transistor
ddtc115eca7f
Ic n13
MARKING CODE n20
N20 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, “Green” Molding Compound
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Original
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J-STD-020
MIL-STD-202,
AEC-Q101
DS30329
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PDF
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Untitled
Abstract: No abstract text available
Text: ACE306A Low Voltage Detector with Built-in Delay Circuit
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Original
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ACE306A
ACE306A
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PDF
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Untitled
Abstract: No abstract text available
Text: ACE302A Low Voltage Detector with Built-in Delay Circuit
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Original
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ACE302A
ACE302A
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PDF
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Untitled
Abstract: No abstract text available
Text: ACE302A Low Voltage Detector with Built-in Delay Circuit Description The ACE302A Series is a series of high-precision voltage detectors with a built-in delay time generator of fixed time. developed using CMOS process. The detection voltage is fixed internally, with an accuracy of ±2.0%. Internal oscillator and counter timer
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Original
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ACE302A
ACE302A
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PDF
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CE8808
Abstract: CE880 SC-82 80VVOUT
Text: CE8808系列 超小型高精度电压检测器 CE8808系列 超小型高精度电压检测器 简述 特点 CE8808 系列是采用CMOS 工艺制造的高 • 超低消耗电流: 1 µA Typ,VDD=3.5 V 时 精度低功耗的电压检测芯片。主要由基准
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Original
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CE8808
CE8808
OT23-3
OT343
SC-82)
OT89-3
CE880
SC-82
80VVOUT
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PDF
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g28 SOT23
Abstract: weston 461 st 95160 9418 transistor TO-92 9742 9943 so-8 9418 transistor 9806 9928 f56 dd pack m
Text: CONTENTS October 2000 OPERATING LIFE TEST SUMMARY . 2 HAST . 3 AUTOCLAVE TEST . 4
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Original
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S-191
g28 SOT23
weston 461
st 95160
9418 transistor TO-92
9742
9943 so-8
9418 transistor
9806
9928 f56
dd pack m
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PDF
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BSN20 MARKING
Abstract: BSN20 equivalent bsn20
Text: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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BSN20
450mA
500mA
AEC-Q101
DS31898
BSN20 MARKING
BSN20 equivalent
bsn20
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PDF
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BSN20 equivalent
Abstract: No abstract text available
Text: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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BSN20
500mA
450mA
J-STD-020
DS31898
BSN20 equivalent
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PDF
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BSN20 MARKING
Abstract: BSN20 equivalent BSN20 sot23 marking jsp BSN20-7
Text: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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BSN20
450mA
500mA
AEC-Q101
DS31898
621-AP2401MP-13
AP2401MP-13
BSN20 MARKING
BSN20 equivalent
BSN20
sot23 marking jsp
BSN20-7
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PDF
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n24 transistor
Abstract: No abstract text available
Text: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 A SOT-23 3 OUT
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Original
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OT-23
OT-23,
MIL-STD-202,
DDTC123ECA
DDTC143ECA
DDTC114ECA
DDTC124ECA
DDTC144ECA
n24 transistor
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PDF
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n24 transistor
Abstract: transistor N08 DS30329
Text: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 A SOT-23 3 OUT
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Original
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OT-23
OT-23,
MIL-STD-202,
DDTC123ECA
DDTC143ECA
DDTC114ECA
DDTC124ECA
DDTC144ECA
n24 transistor
transistor N08
DS30329
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PDF
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Untitled
Abstract: No abstract text available
Text: BSN20 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = +25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • • Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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BSN20
500mA
450mA
J-STD-020
DS31898
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PDF
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transistor cross reference
Abstract: RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA
Text: New Product Announcement July 2002 Announcing Full Line of 100mA Pre-biased Transistors in Surface Mount Packages Singles in SOT-523, SOT-323, SOT-23 & SC-59 Duals in SOT-363 & SOT-26 / SC-74 NPN PNP R1 R1 R2 R2 NPN Dual R 1 R2 R2 R 1 PNP Dual NPN/PNP Complementary Dual
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Original
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100mA
OT-523,
OT-323,
OT-23
SC-59
OT-363
OT-26
SC-74
OT-23
transistor cross reference
RT1N241M
N10 SOT363
SOT-363 marking n10
Transistor ROHM N14
N06 TRANSISTOR
n10 marking code sot 23
RT1N441C
mun5132
DTA114EEA
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PDF
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S02222A
Abstract: S02222
Text: SO2222 S02222A r z 7 SGS-THOM SON Ä T # KfilOeilSILIOTIfi! «! SMALL SIGNAL NPN TRANSISTORS Type Marking S02222 N13 S02222A N20 • SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION
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OCR Scan
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SO2222
S02222A
S02222
S02907
S02907A
OT-23
S02222/S02222A
S02222A
S02222
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PDF
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BC-337 B 011
Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Text: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation
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OCR Scan
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CB-166
ISOT-23)
BCW31
BCW32
BCW33
BCW71
BCW72
BCX20
BSV52
BC-337 B 011
BC 195 TRANSISTORS
transistors BC 23
SO2221R
BC-338 B 011
SO2484R
BC 930
222-1
2221
bc 107 silicon equivalent
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PDF
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