GAS-1N
Abstract: GPS antenna 1575 and 1227 1n1001 GPS Antenna N100-1 military Antenna square patch Antenna DM 0385 navstar N1001
Text: Wireless NAVIGATION DM N100-1 GPS ANTENNA The newly introduced DM N100-1 GPS antenna has been designed to provide a reduced size aperture for Antijam GPS reception over the full military GPS bandwidth. While fully compliant with GAS-1N requirements, the DM N100-1 footprint is a mere
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N100-1
MIL-E-5400
MIL-STD-202
MIL-STD-810
GAS-1N
GPS antenna 1575 and 1227
1n1001
GPS Antenna
military Antenna
square patch Antenna
DM 0385
navstar
N1001
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10N100
Abstract: 13N100 N100 13n10
Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions
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IXFT12
10N100
13N100
N100
13n10
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10N100
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions
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IXFT12
10N100
12N100
13N100
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFT 10 N100 1000 V 10 IXFT12 N100 1000 V 12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family RDS on A A 1.20 Ω 1.05 Ω trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR
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IXFT12
10N100
12N100
728B1
123B1
728B1
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13n10
Abstract: 10N100 N100 13N100
Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C
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10N100
12N100
O-247
O-204
728B1
123B1
13n10
10N100
N100
13N100
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15N100
Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings
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IXFH/IXFT/IXFX14
IXFH/IXFT/IXFX15
14N100
15N100
15N100
IXFH15N100
IXFH14N100
14N100
IXFT14N100
N100
CASE OUTLINE 55 BT- Style 1
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10N100
Abstract: N100
Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFT 10 N100 1000 V 10 IXFT12 N100 1000 V 12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family RDS on A A 1.20 Ω 1.05 Ω trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR
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IXFT12
10N100
12N100
728B1
123B1
728B1
10N100
N100
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10N100
Abstract: No abstract text available
Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C
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10N100
12N100
728B1
123B1
728B1
065B1
10N100
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10N100
Abstract: 12n100 N100
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C
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10N100
12N100
10N100
12n100
N100
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10N100
Abstract: N100 12n100 TO204AA
Text: VDSS MegaMOSTMFET ID25 RDS on 1000 V 10 A 1.20 Ω 1000 V 12 A 1.05 Ω IXTH/IXTM 10 N100 IXTH/IXTM 12 N100 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V
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10N100
12N100
O-247
O-204
10N100
N100
12n100
TO204AA
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n161
Abstract: N100 transistor N100 FLATPACK
Text: Package Diagram Plastic Quad Flatpacks 52-Lead Plastic Quad Flatpack N52 51-85042 1 Package Diagram 64-Lead Plastic Quad Flatpack N64 51-85036-A 2 Package Diagram 80-Lead Plastic Quad Flatpack N80 3 Package Diagram 100-Lead Plastic Quad Flatpack N100 51-85052-A
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52-Lead
64-Lead
1-85036-A
80-Lead
100-Lead
1-85052-A
128-Lead
1-85080-A
160-Lead
1-85057-A
n161
N100
transistor N100
FLATPACK
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5N100
Abstract: 5N100A N100 1000v5a 2NA250
Text: VDSS Standard Power MOSFET ID25 IXTH/IXTM 5 N100 1000 V IXTH/IXTM 5 N100A 1000 V 5A 5A RDS on 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000
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N100A
O-204
O-247
5N100A
O-204AE
5N100
5N100
5N100A
N100
1000v5a
2NA250
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Untitled
Abstract: No abstract text available
Text: MECHANICAL DATA MPBG037 – JANUARY 1997 GGF S-PBGA-N100 PLASTIC BALL GRID ARRAY PACKAGE 10,10 SQ 9,90 15 4 2 14 12 10 8 6 3 1 13 11 9 5 7 A B C D E F G H J K L 0,50 M N P R 0,50 0,95 0,85 0,12 0,08 1,20 MAX 0,35 0,25 0,05 M 0,25 0,20 0,08 4073214-2/B 10/96
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MPBG037
S-PBGA-N100)
4073214-2/B
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transistor ixgh 25N100
Abstract: .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550
Text: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25
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N100A
O-204
O-247
25N100g2
transistor ixgh 25N100
.25N100
25N100
ixgm
IXGH/IXGM 25 N100A
25N100A
N100
ixgh 10v
C90T
IC2550
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25N100A
Abstract: .25N100 25N100 N100
Text: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90
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N100A
25N100
25N100A
O-204AE
25N100A
.25N100
25N100
N100
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IXYS 17N100
Abstract: 17N100A 17N100 N100
Text: VCES Low VCE sat IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient
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N100A
O-247
17N100
17N100A
O-204AE
17N100
17N100U1
IXYS 17N100
17N100A
N100
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D1488
Abstract: TO-247 AD
Text: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings
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IXFH/IXFT/IXFX14
IXFH/IXFT/IXFX15
10TransientThermallmpedance
D1488
TO-247 AD
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Untitled
Abstract: No abstract text available
Text: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V
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IXTH/IXTM10
IXTH/IXTM12
10N100
12N100
O-247
O-204
O-247
IXTH10N100
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3015 hj
Abstract: SK 1117
Text: 1 V A V 'C L J V DSS MegaMOS FET IXTH/IXTM10 N100 IXTH/IXTM12 N100 p ^D25 DS on 1000 V 10 A 1.20 a 1000 V 12 A 1.05 q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V *DSS Tj = 25 °C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M n
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IXTH/IXTM10
IXTH/IXTM12
10N100
12N100
O-247
O-204
12N100
IXTM12N100
100ps
3015 hj
SK 1117
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5n100
Abstract: 5N100A
Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM
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N100A
O-247
O-204
O-204
O-247
4bflb52b
5n100
5N100A
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15N100
Abstract: No abstract text available
Text: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings
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IXFH/IXFX15
14N100
15N100
K30Ts
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Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs V DSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Voss V«, Tj = 25°C to 150°C Vos VGSM Continuous T ransient IXFH/IXFM10N100 IXFH/IXFM12 N100 IXFH13N100 00 Maximum Ratings Tj = 25°C to 150°C; RGS= 1 M ii
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IXFH/IXFM10N100
IXFH/IXFM12
IXFH13N100
10N100
12N100
13N100
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DIODE B44 sot
Abstract: IXTK21 B44 diode IXTN21N100
Text: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V
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IXTK21
IXTN21N100
O-264
21N100
21N100
DIODE B44 sot
B44 diode
IXTN21N100
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17N10
Abstract: No abstract text available
Text: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90
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IXGH/IXGM17
N100A
O-247
O-204
O-247
17N100
17N100U1
17N100AU1
17N10
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