Si4410DY
Abstract: 100VDS
Text: Si4410DY Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(ON) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4410DY
S-56945--Rev.
23-Nov-98
100VDS
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S-49536
Abstract: S49536 Si4410DY 49536
Text: Si4410DY N-Channel 30-V D-S MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4410DY
S-49536--Rev.
18-Aug-97
S-49536
S49536
49536
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SI4412ADY
Abstract: No abstract text available
Text: Si4412ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "8 0.035 @ VGS = 4.5 V "6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4412ADY
S-99547--Rev.
20-Dec-99
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Siliconix
Abstract: Si4820DY vishaysiliconix
Text: Si4820DY Siliconix N-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) 30 RDS(ON) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4820DY
S-56934--Rev.
20-Jul-98
Siliconix
vishaysiliconix
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99547
Abstract: No abstract text available
Text: Si4412ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "8 0.035 @ VGS = 4.5 V "6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4412ADY
S-99547--Rev.
20-Dec-99
99547
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Untitled
Abstract: No abstract text available
Text: Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.024 @ VGS = 10 V 8 0.035 @ VGS = 4.5 V 6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4412ADY Si4412ADY-T1 (with Tape and Reel)
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Si4412ADY
Si4412ADY-T1
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.024 @ VGS = 10 V 8 0.035 @ VGS = 4.5 V 6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4412ADY Si4412ADY-T1 (with Tape and Reel)
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Si4412ADY
Si4412ADY-T1
08-Apr-05
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Si4412ADY
Abstract: Si4412ADY-T1
Text: Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.024 @ VGS = 10 V 8 0.035 @ VGS = 4.5 V 6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4412ADY Si4412ADY-T1 (with Tape and Reel)
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Si4412ADY
Si4412ADY-T1
S-03951--Rev.
26-May-03
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Si4410DY
Abstract: No abstract text available
Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4410DY
S-56945--Rev.
23-Nov-98
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Untitled
Abstract: No abstract text available
Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4410DY
08-Apr-05
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Si4410DY
Abstract: No abstract text available
Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4410DY
18-Jul-08
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Si4416DY
Abstract: No abstract text available
Text: Si4416DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 0.028 @ VGS = 4.5 V 7.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel
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Si4416DY
S-05103--Rev.
17-Dec-01
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Untitled
Abstract: No abstract text available
Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S
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Si4884DY
S99-041--Rev.
04-Oct-99
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si4884dy
Abstract: No abstract text available
Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S
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Si4884DY
S-61804--Rev.
21-Jun-99
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S99-041
Abstract: No abstract text available
Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S
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Si4884DY
S99-041--Rev.
04-Oct-99
S99-041
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si4402dy
Abstract: si4402
Text: Si4402DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S
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Si4402DY
18-Jul-08
si4402
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Untitled
Abstract: No abstract text available
Text: Si4402DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S
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Si4402DY
S-00117--Rev.
07-Feb-00
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SI4563DY
Abstract: No abstract text available
Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested
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Si4563DY
Si4563DY-T1--E3
08-Apr-05
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S-49534
Abstract: Si4450DY
Text: Si4450DY N-Channel 60-V D-S Rated MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-49534--Rev.
06-Oct-97
S-49534
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Si4420DY
Abstract: No abstract text available
Text: Si4420DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4420DY
S-49457--Rev.
17-Dec-96
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S-49534
Abstract: Si4450DY
Text: Si4450DY N-Channel 60-V D-S Rated MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-49534--Rev.
06-Oct-97
S-49534
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Untitled
Abstract: No abstract text available
Text: SÌ4558DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V d s (V ) N-Channel P-Channel r DS(on) (S3) I d (A) 0.040 Vq S = 10 V ±6 0.060 @ VGs = 4.5 V ±4.8 30 0.040 @ Vqs = -10 V ±6 0.070 @ VGS = -4.5 V ±4.4 -30 s2 o SO-8 ~8~| Ql Œ
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4558DY
S-56944--
23-Nov-9i
23-Nov-98
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ4420DY S e m i c o n d u c t o r s N-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) 30 rDS(on) ( ^ ) I d (A ) 0.009 @ VGS = 10 V ± 12.5 0.013 @ VGS =4.5 V ±10.5 SO-8 s [T ~8~| D s \T T ] D s [T ~6~] G D XI D {T Top View N-Channel M OSFET
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4420DY
S-49457--Rev.
17-Dec-96
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L00A
Abstract: ic l00a si6954
Text: Tem ic SÌ6954DQ S e m i c o n d u c t o r s Dual N-Channel 30-V D-S Rated MOSFET Product Summary V u s(V ) rDS(on) (Q ) I d (A ) 0.065 @ VGS= 10 V ± 3 .9 0.095 @ VGS = 4.5 V ± 3.1 30 T SSO P-8 ;<JE Ô Si Ô s. N -Channel M O SFET N-Channel M OSFET T S S O P -8
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6954DQ
20stics
S-49534--
ct-97
06-Oct-97
L00A
ic l00a
si6954
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