AOB480L
Abstract: AOT480L Mj333
Text: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This
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AOT480L/AOB480L
AOT480L
AOB480L
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Mj333
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Untitled
Abstract: No abstract text available
Text: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This
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AOT480L/AOB480L
AOT480L
AOB480L
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Untitled
Abstract: No abstract text available
Text: AOT480L/AOB480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L & AOB480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This
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AOT480L/AOB480L
AOT480L
AOB480L
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Untitled
Abstract: No abstract text available
Text: AOW480 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOW480 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is
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AOW480
AOW480
O-262
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aot480l
Abstract: DM 7820
Text: AOT480L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT480L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is
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AOT480L
AOT480L
DM 7820
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Untitled
Abstract: No abstract text available
Text: AOT480L/AOB480L 80V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AOT480L & AOB480L is fabricated with SDMOS trench technology that combines excellent RDS ON with low gate charge & low Qrr. The result is outstanding efficiency with controlled switching behavior. This universal
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AOT480L/AOB480L
AOT480L
AOB480L
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Untitled
Abstract: No abstract text available
Text: SSFP42N10 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 100V Simple Drive Requirement ID25 = 42A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP42N10
00A/s
ISD22A
di/dt180A/S
TJ175
width300S;
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isotop mosfet 180A 100V
Abstract: STE180NE10
Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
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STE180NE10
isotop mosfet 180A 100V
STE180NE10
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Ultrasonic welding circuit diagram
Abstract: schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET
Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
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STE180NE10
Ultrasonic welding circuit diagram
schematic diagram UPS
Ultrasonic welding circuit
STE180NE10
isotop mosfet 100V
SWITCHING WELDING SCHEMATIC BY MOSFET
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IRL540N equivalent
Abstract: IRL540N
Text: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V
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IRLI540NPbF
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IRL540N
IRL540N equivalent
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Infineon technology roadmap for mosfet
Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial
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KMZ60
KMA210
KMA215
Infineon technology roadmap for mosfet
LFPAK88
Acbel schematic diagram switching power supply
BLDC TRW
schematic diagram inverter air conditioner
schematic diagram for split air conditioner
TRIAC 20A 600V
inverter schematic ims 1600
triac 4A, 600V, 5mA
triac 0,8A, 600V, 5mA
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ISL8240
Abstract: ISL6840 ISL21060
Text: P WERING INFRASTRUCTURE Telecom/Datacom, Wired Networks and Data Storage P WERING INFRASTRUCTURE The increased amount of data and video all of which can be configured using Intersil’s being transmitted via the cloud has placed PowerNavigator — the industry’s most
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LC-113
ISL8240
ISL6840
ISL21060
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IRL540N
Abstract: No abstract text available
Text: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V
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IRLI540NPbF
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IRL540N
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Untitled
Abstract: No abstract text available
Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier
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91503D
IRFP150N
O-247
O-247AC
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IRFP150N
Abstract: IRF1310N TO-247AC Package Mosfet IRFP150N 4.5v to 100v input regulator
Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier
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91503D
IRFP150N
O-247
O-247AC
IRFP150N
IRF1310N
TO-247AC Package
Mosfet IRFP150N
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD -95454 IRLI540NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V
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IRLI540NPbF
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N mosfet 250v 600A
Abstract: No abstract text available
Text: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A
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0000W,
0400W,
4500W,
5600W
00V/0
20kHz
63200-E-201408-1000
N mosfet 250v 600A
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IRFP150N
Abstract: IRFP150N International Rectifier IRF1310N 4.5v to 100v input regulator Mosfet IRFP150N 91503D
Text: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier
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91503D
IRFP150N
O-247
O-247AC
IRFP150N
IRFP150N International Rectifier
IRF1310N
4.5v to 100v input regulator
Mosfet IRFP150N
91503D
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IRF1310N
Abstract: IRF1310n equivalent 4.5V to 100V input regulator
Text: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFI1310NPbF
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I840G
IRF1310N
IRF1310n equivalent
4.5V to 100V input regulator
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IRFI1310N
Abstract: irfi1310 IRF1310N 4.5v to 100v input regulator
Text: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier
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IRFI1310N
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IRFI1310N
irfi1310
IRF1310N
4.5v to 100v input regulator
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IRF1310N
Abstract: IRFP150N IRFP150N International Rectifier 4.5v to 100v input regulator
Text: PD - 9.1503B IRFP150N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier
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1503B
IRFP150N
O-247
IRF1310N
IRFP150N
IRFP150N International Rectifier
4.5v to 100v input regulator
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IRF1310N
Abstract: IRFI1310N 4.5v to 100v input regulator
Text: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier
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IRFI1310N
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IRF1310N
IRFI1310N
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFI1310NPbF
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I840G
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IRF1310N
Abstract: 4.5V to 100V input regulator
Text: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFI1310NPbF
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I840G
IRF1310N
4.5V to 100V input regulator
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