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    TIM7179-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz


    Original     		TIM7179-16L 2-16G1B) MW51030196 TIM7179-16L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		TIM7179-16L MW51030196 DD22SÃ TIM7179-16L T0T7250 00225A4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -42 d B c at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		7179-16L MW51030196 TIM7179-16L TIM7179-16L PDF