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    TIM7179-8L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain


    Original     		TIM7179-8L 2-11D1B) MW51000196 TIM7179-8L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain


    OCR Scan     		TIM7179-8L MW51000196 TIM7179-8L itH725G PDF

    mW51

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -44 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		TIM7179-8L MW51000196 7179-8L mW51 PDF