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    TIM3742-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM3742-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    Original     		TIM3742-16L 2-16G1B) MW50470196 TIM3742-16L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -44 d B c at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		TIM3742-16L TIM3742-161Power MW50470196 TIM3742-16L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		TIM3742-16L MW50470196 TCH725G 223SQ TIM3742-16L GG22351 PDF