TIM3742-16L
Abstract: No abstract text available
Text: TOSHIBA TIM3742-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz
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Original
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TIM3742-16L
2-16G1B)
MW50470196
TIM3742-16L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -44 d B c at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz
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OCR Scan
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TIM3742-16L
TIM3742-161Power
MW50470196
TIM3742-16L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 3.7 GHz to 4.2 GHz
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OCR Scan
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TIM3742-16L
MW50470196
TCH725G
223SQ
TIM3742-16L
GG22351
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PDF
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