TIM1213-8L
Abstract: No abstract text available
Text: TOSHIBA TIM1213-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz
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Original
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TIM1213-8L
2-11C1A)
MW50250196
TIM1213-8L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - ldB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package
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OCR Scan
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TIM1213-8
2-11C1A)
MW50250196
TCH725G
G2231S
TDT7250
TIM1213-8L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz
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OCR Scan
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TIM1213-8L
2-11C1A)
MW50250196
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PDF
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