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    Text: TOSHIBA MICROWAVE POWER GaAs FET JS8892-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 2 1 .0 dBm at f = 2 3 GHz • High gain - G1dB = 6 .5 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		JS8892-AS JS889Z-AS 23GHz MW10150196 JS8892-AS i7250 PDF