MW10130196 Search Results

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Text: T O S H IB A MICROWAVE POWER GaAs FET JS8855-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 32 dBm at f = 15 G H z • High gain - G idB = 7 dB at f = 15 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)