Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC2875 TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES 2009. 3. 12 Revision No : 3 1/3
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KTC2875
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Untitled
Abstract: No abstract text available
Text: STICK-ON SERIES Model ST-MA2 Muting Monitor Amplifier ANYWHERE YOU NEED. • • • • • • A Single Speaker Monitor Amplifier A Conferencing Monitor Amp A Monitor Amp with Muting and Externally Actuated Attenuation Steps Fast, Silent Audio Switching
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/3
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KRC231M
KRC235M
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2011. 6. 29 Revision No : 6 1/3
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KRC231S
KRC235S
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PBSS4140
Abstract: PBSS4140T 417 278
Text: PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ․Low collector-emitter saturation voltage ․High current capabilities ․Improved device reliability due to reduced heat generation. APPLICATIONS ․General purpose switching and muting ․LCD backlighting
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PBSS4140T
Tamb25OC
Tamb25
100mA,
500mA,
100mA
100MHz
PBSS4140
PBSS4140T
417 278
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PBSS4140T
Abstract: PBSS4140 417 278
Text: PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting
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PBSS4140T
Tamb25OC
Tamb25
100mA,
500mA,
100mA
100MHz
PBSS4140T
PBSS4140
417 278
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2SA1954
Abstract: HN7G04FU RN1307
Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Maximum Ratings Ta = 25°C Characteristic
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HN7G04FU
2SA1954
RN1307
HN7G04FU
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC231M
KRC235M
KRC231M
KRC232M
KRC234M
KRC233M
-50mA,
100MHz
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PBSS4140T
Abstract: No abstract text available
Text: ST PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting
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PBSS4140T
Tamb25
100mA,
500mA,
100mA
100MHz
tp300s
PBSS4140T
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2SA1954
Abstract: HN7G04FU RN1307
Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Absolute Maximum Ratings Ta = 25°C Characteristic
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HN7G04FU
2SA1954
RN1307
HN7G04FU
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2SC5974A
Abstract: MUTING AND SWITCHING APPLICATION
Text: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5974A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm ISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application
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2SC5974A
2SC5974A
MUTING AND SWITCHING APPLICATION
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PBSS4140T
Abstract: No abstract text available
Text: ST PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting
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PBSS4140T
Tamb25
100mA,
500mA,
100mA
100MHz
tp300s
PBSS4140T
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2SA1955FV
Abstract: No abstract text available
Text: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage
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2SA1955FV
2SA1955FV
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2SA1954
Abstract: HN7G04FU RN1307
Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Absolute Maximum Ratings Ta = 25°C Characteristic
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HN7G04FU
2SA1954
RN1307
HN7G04FU
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2SC5376FV
Abstract: sat 1205
Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •
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2SC5376FV
2SC5376FV
sat 1205
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NPN Silicon Epitaxial Planar Transistor
Abstract: No abstract text available
Text: MMBTRC231S.MMBTRC234S NPN Silicon Epitaxial Planar Transistor For switching, audio muting, interface circuit and driver circuit applications Collector Base R1 Emitter Absolute Maximum Ratings Ta = 25 OC Parameter SOT-23 Plastic Package Symbol Value Unit
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MMBTRC231S.
MMBTRC234S
OT-23
MMBTRC231S
MMBTRC233S
NPN Silicon Epitaxial Planar Transistor
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A B O F FEATURES H ・With Built-in Bias Resistors. M G ・Simplify Circuit Design.
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KRC231M
KRC235M
KRC232M
KRC233M
KRC234M
KRC235M
-50mA,
100MHz
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isahaya
Abstract: 2SC5974B
Text: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5974B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm ISAHAYA 2SC5974B is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application
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2SC5974B
2SC5974B
isahaya
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isahaya
Abstract: 2SC5974
Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5974 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit : mm ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application
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2SC5974
2SC5974
isahaya
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2SC5376FV
Abstract: No abstract text available
Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage
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2SC5376FV
2SC5376FV
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Untitled
Abstract: No abstract text available
Text: MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: •A collector current is large. •Collector saturation voltage is low. SOT-23 Plastic Package -VCE sat : 250mV(Max.) at -IC=200mA/-IB=10mA
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MMBTSA2018
OT-23
250mV
200mA/-IB
200mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •
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2SA1954
SC-70
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Untitled
Abstract: No abstract text available
Text: 0 O Optical disc ICs Muting 1C for portable CD players o (0 CO o Q. O BA3124F The BA3124F is an IC developed for line output muting in portable CD players, and uses control pin switching to achieve line muting and to eliminate the dull thump that occurs when the power is turned on or off.
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BA3124F
BA3124F
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marking FA
Abstract: 2SC5233
Text: TOSHIBA 2SC5233 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5233 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (TyP-) @ Iq = 10mA / Ig = 0.5mA
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2SC5233
500mA
SC-70
marking FA
2SC5233
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